DE3433160A1 - Fotoleitfaehiges element - Google Patents

Fotoleitfaehiges element

Info

Publication number
DE3433160A1
DE3433160A1 DE19843433160 DE3433160A DE3433160A1 DE 3433160 A1 DE3433160 A1 DE 3433160A1 DE 19843433160 DE19843433160 DE 19843433160 DE 3433160 A DE3433160 A DE 3433160A DE 3433160 A1 DE3433160 A1 DE 3433160A1
Authority
DE
Germany
Prior art keywords
layer
atoms
photoconductive element
element according
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19843433160
Other languages
German (de)
English (en)
Other versions
DE3433160C2 (https=
Inventor
Shigeru Yokohama Kanagawa Ohno
Yukihiko Kawasaki Kanagawa Ohnuki
Keishi Ibaraki Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58167072A external-priority patent/JPS6057848A/ja
Priority claimed from JP58170379A external-priority patent/JPS6075841A/ja
Priority claimed from JP58208811A external-priority patent/JPS60101542A/ja
Priority claimed from JP58244738A external-priority patent/JPS60138558A/ja
Priority claimed from JP58245305A external-priority patent/JPS60140248A/ja
Priority claimed from JP58245301A external-priority patent/JPS60140244A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3433160A1 publication Critical patent/DE3433160A1/de
Application granted granted Critical
Publication of DE3433160C2 publication Critical patent/DE3433160C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G03G5/08242—Silicon-based comprising three or four silicon-based layers at least one with varying composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
DE19843433160 1983-09-09 1984-09-10 Fotoleitfaehiges element Granted DE3433160A1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP58167072A JPS6057848A (ja) 1983-09-09 1983-09-09 光導電部材
JP58170379A JPS6075841A (ja) 1983-09-13 1983-09-13 光導電部材
JP58208811A JPS60101542A (ja) 1983-11-07 1983-11-07 光導電部材
JP58244738A JPS60138558A (ja) 1983-12-27 1983-12-27 電子写真用光導電部材
JP58245305A JPS60140248A (ja) 1983-12-28 1983-12-28 光導電部材
JP58245301A JPS60140244A (ja) 1983-12-28 1983-12-28 光導電部材

Publications (2)

Publication Number Publication Date
DE3433160A1 true DE3433160A1 (de) 1985-03-28
DE3433160C2 DE3433160C2 (https=) 1989-06-08

Family

ID=27553326

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843433160 Granted DE3433160A1 (de) 1983-09-09 1984-09-10 Fotoleitfaehiges element

Country Status (2)

Country Link
US (1) US4592979A (https=)
DE (1) DE3433160A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2595635B2 (ja) * 1988-03-24 1997-04-02 富士電機株式会社 電子写真用感光体

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3212184A1 (de) * 1981-04-17 1982-11-11 Kawamura, Takao, Sakai, Osaka Lichtempfindliches element

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4490453A (en) * 1981-01-16 1984-12-25 Canon Kabushiki Kaisha Photoconductive member of a-silicon with nitrogen
US4491626A (en) * 1982-03-31 1985-01-01 Minolta Camera Kabushiki Kaisha Photosensitive member

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3212184A1 (de) * 1981-04-17 1982-11-11 Kawamura, Takao, Sakai, Osaka Lichtempfindliches element

Also Published As

Publication number Publication date
DE3433160C2 (https=) 1989-06-08
US4592979A (en) 1986-06-03

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8380 Miscellaneous part iii

Free format text: SEITE 67, ZEILE 19 "LICHTEMPFINDLICHE SCHICHT" AENDERN IN "LICHTEMPFANGENDE SCHICHT"

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee