DE3431450C2 - - Google Patents

Info

Publication number
DE3431450C2
DE3431450C2 DE3431450A DE3431450A DE3431450C2 DE 3431450 C2 DE3431450 C2 DE 3431450C2 DE 3431450 A DE3431450 A DE 3431450A DE 3431450 A DE3431450 A DE 3431450A DE 3431450 C2 DE3431450 C2 DE 3431450C2
Authority
DE
Germany
Prior art keywords
layer
atoms
recording material
zone
electrophotographic recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3431450A
Other languages
German (de)
English (en)
Other versions
DE3431450A1 (de
Inventor
Keishi Ibaraki Jp Saitoh
Yukihiko Kawasaki Kanagawa Jp Ohnuki
Shigeru Yokohama Kanagawa Jp Ohno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58156682A external-priority patent/JPS6048048A/ja
Priority claimed from JP58240022A external-priority patent/JPS60131540A/ja
Priority claimed from JP58240023A external-priority patent/JPS60131541A/ja
Priority claimed from JP58242654A external-priority patent/JPS60134242A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3431450A1 publication Critical patent/DE3431450A1/de
Application granted granted Critical
Publication of DE3431450C2 publication Critical patent/DE3431450C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE3431450A 1983-08-26 1984-08-27 Photoleitfaehiges aufzeichnungsmaterial Granted DE3431450A1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP58156682A JPS6048048A (ja) 1983-08-26 1983-08-26 光導電部材
JP58240022A JPS60131540A (ja) 1983-12-20 1983-12-20 光導電部材
JP58240023A JPS60131541A (ja) 1983-12-20 1983-12-20 光導電部材
JP58242654A JPS60134242A (ja) 1983-12-22 1983-12-22 光導電部材

Publications (2)

Publication Number Publication Date
DE3431450A1 DE3431450A1 (de) 1985-03-21
DE3431450C2 true DE3431450C2 (https=) 1988-12-29

Family

ID=27473433

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3431450A Granted DE3431450A1 (de) 1983-08-26 1984-08-27 Photoleitfaehiges aufzeichnungsmaterial

Country Status (4)

Country Link
US (1) US4609604A (https=)
DE (1) DE3431450A1 (https=)
FR (1) FR2551229B1 (https=)
GB (1) GB2148019B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3571515D1 (en) * 1985-03-13 1989-08-17 Kanegafuchi Chemical Ind Multilayer photoconductive material
EP0237173B2 (en) * 1986-02-07 1999-06-16 Canon Kabushiki Kaisha Light receiving member
US4818655A (en) * 1986-03-03 1989-04-04 Canon Kabushiki Kaisha Electrophotographic light receiving member with surface layer of a-(Six C1-x)y :H1-y wherein x is 0.1-0.99999 and y is 0.3-0.59

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116037A (en) * 1980-02-19 1981-09-11 Fujitsu Ltd Manufacture of electrophotographic receptor
JPS5737352A (en) * 1980-08-15 1982-03-01 Stanley Electric Co Ltd Electrophotographic receptor
JPS57104938A (en) * 1980-12-22 1982-06-30 Canon Inc Image forming member for electrophotography
JPS57115552A (en) * 1981-01-08 1982-07-19 Nippon Telegr & Teleph Corp <Ntt> Electrophotographic receptor
JPS57172344A (en) * 1981-04-17 1982-10-23 Minolta Camera Co Ltd Electrophotographic photorecepter
US4423133A (en) * 1981-11-17 1983-12-27 Canon Kabushiki Kaisha Photoconductive member of amorphous silicon
US4460670A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, N or O and dopant
JPS58189643A (ja) * 1982-03-31 1983-11-05 Minolta Camera Co Ltd 感光体
US4491626A (en) * 1982-03-31 1985-01-01 Minolta Camera Kabushiki Kaisha Photosensitive member
US4490430A (en) * 1983-03-28 1984-12-25 International Business Machines Corporation Self-supporting thermal ink
US4513073A (en) * 1983-08-18 1985-04-23 Minnesota Mining And Manufacturing Company Layered photoconductive element

Also Published As

Publication number Publication date
FR2551229B1 (fr) 1990-11-02
GB2148019B (en) 1986-07-30
US4609604A (en) 1986-09-02
GB2148019A (en) 1985-05-22
FR2551229A1 (fr) 1985-03-01
DE3431450A1 (de) 1985-03-21
GB8421686D0 (en) 1984-10-03

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee