DE3432480A1 - Fotoleitfaehiges aufzeichnungsmaterial - Google Patents

Fotoleitfaehiges aufzeichnungsmaterial

Info

Publication number
DE3432480A1
DE3432480A1 DE19843432480 DE3432480A DE3432480A1 DE 3432480 A1 DE3432480 A1 DE 3432480A1 DE 19843432480 DE19843432480 DE 19843432480 DE 3432480 A DE3432480 A DE 3432480A DE 3432480 A1 DE3432480 A1 DE 3432480A1
Authority
DE
Germany
Prior art keywords
layer
atoms
gas
material according
geh
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19843432480
Other languages
German (de)
English (en)
Other versions
DE3432480C2 (enFirst
Inventor
Shigeru Yokohama Kanagawa Ohno
Yukihiko Kawasaki Kanagawa Ohnuki
Keishi Ibaraki Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58162724A external-priority patent/JPS6053956A/ja
Priority claimed from JP58163432A external-priority patent/JPS6055349A/ja
Priority claimed from JP58167745A external-priority patent/JPS6059358A/ja
Priority claimed from JP58167749A external-priority patent/JPS6059362A/ja
Priority claimed from JP58191988A external-priority patent/JPS6083956A/ja
Priority claimed from JP58191984A external-priority patent/JPS6083952A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3432480A1 publication Critical patent/DE3432480A1/de
Application granted granted Critical
Publication of DE3432480C2 publication Critical patent/DE3432480C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
DE19843432480 1983-09-05 1984-09-04 Fotoleitfaehiges aufzeichnungsmaterial Granted DE3432480A1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP58162724A JPS6053956A (ja) 1983-09-05 1983-09-05 電子写真用光導電部材
JP58163432A JPS6055349A (ja) 1983-09-06 1983-09-06 電子写真用光導電部材
JP58167745A JPS6059358A (ja) 1983-09-12 1983-09-12 光導電部材
JP58167749A JPS6059362A (ja) 1983-09-12 1983-09-12 光導電部材
JP58191988A JPS6083956A (ja) 1983-10-14 1983-10-14 光導電部材
JP58191984A JPS6083952A (ja) 1983-10-14 1983-10-14 光導電部材

Publications (2)

Publication Number Publication Date
DE3432480A1 true DE3432480A1 (de) 1985-04-04
DE3432480C2 DE3432480C2 (enFirst) 1989-05-24

Family

ID=27553266

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843432480 Granted DE3432480A1 (de) 1983-09-05 1984-09-04 Fotoleitfaehiges aufzeichnungsmaterial

Country Status (2)

Country Link
US (1) US4587190A (enFirst)
DE (1) DE3432480A1 (enFirst)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0235966A1 (en) 1986-02-07 1987-09-09 Canon Kabushiki Kaisha Light receiving member
EP0237173A1 (en) * 1986-02-07 1987-09-16 Canon Kabushiki Kaisha Light receiving member

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US20030111013A1 (en) * 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
US20050049539A1 (en) * 2003-09-03 2005-03-03 O'hara Gerald P. Control system for driving fluids through an extracorporeal blood circuit
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
WO2006039341A2 (en) * 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3212184A1 (de) * 1981-04-17 1982-11-11 Kawamura, Takao, Sakai, Osaka Lichtempfindliches element

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4490453A (en) * 1981-01-16 1984-12-25 Canon Kabushiki Kaisha Photoconductive member of a-silicon with nitrogen
US4460670A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, N or O and dopant
US4490450A (en) * 1982-03-31 1984-12-25 Canon Kabushiki Kaisha Photoconductive member
JPS58192044A (ja) * 1982-05-06 1983-11-09 Konishiroku Photo Ind Co Ltd 感光体

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3212184A1 (de) * 1981-04-17 1982-11-11 Kawamura, Takao, Sakai, Osaka Lichtempfindliches element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0235966A1 (en) 1986-02-07 1987-09-09 Canon Kabushiki Kaisha Light receiving member
EP0237173A1 (en) * 1986-02-07 1987-09-16 Canon Kabushiki Kaisha Light receiving member

Also Published As

Publication number Publication date
US4587190A (en) 1986-05-06
DE3432480C2 (enFirst) 1989-05-24

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition