DE3430923A1 - Fotoleitfaehiges aufzeichnungsmaterial - Google Patents

Fotoleitfaehiges aufzeichnungsmaterial

Info

Publication number
DE3430923A1
DE3430923A1 DE19843430923 DE3430923A DE3430923A1 DE 3430923 A1 DE3430923 A1 DE 3430923A1 DE 19843430923 DE19843430923 DE 19843430923 DE 3430923 A DE3430923 A DE 3430923A DE 3430923 A1 DE3430923 A1 DE 3430923A1
Authority
DE
Germany
Prior art keywords
layer
material according
atoms
photoconductive material
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19843430923
Other languages
German (de)
English (en)
Other versions
DE3430923C2 (enExample
Inventor
Keishi Ibaraki Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3430923A1 publication Critical patent/DE3430923A1/de
Application granted granted Critical
Publication of DE3430923C2 publication Critical patent/DE3430923C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08292—Germanium-based
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
DE19843430923 1983-08-23 1984-08-22 Fotoleitfaehiges aufzeichnungsmaterial Granted DE3430923A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58153671A JPS6045078A (ja) 1983-08-23 1983-08-23 光導電部材

Publications (2)

Publication Number Publication Date
DE3430923A1 true DE3430923A1 (de) 1985-03-14
DE3430923C2 DE3430923C2 (enExample) 1988-12-22

Family

ID=15567624

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843430923 Granted DE3430923A1 (de) 1983-08-23 1984-08-22 Fotoleitfaehiges aufzeichnungsmaterial

Country Status (5)

Country Link
US (1) US4569892A (enExample)
JP (1) JPS6045078A (enExample)
DE (1) DE3430923A1 (enExample)
FR (1) FR2555819B1 (enExample)
GB (1) GB2148018B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3610401A1 (de) * 1985-03-28 1987-02-12 Sumitomo Electric Industries Halbleiterelement und verfahren zu dessen herstellung und gegenstand, in dem dieses element verwendet wird

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565731A (en) * 1978-05-04 1986-01-21 Canon Kabushiki Kaisha Image-forming member for electrophotography
JPS63233897A (ja) * 1987-03-23 1988-09-29 株式会社　中西硝子工芸社 装飾面の形成方法
JP4171428B2 (ja) * 2003-03-20 2008-10-22 三洋電機株式会社 光起電力装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3212184A1 (de) * 1981-04-17 1982-11-11 Kawamura, Takao, Sakai, Osaka Lichtempfindliches element

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4471042A (en) * 1978-05-04 1984-09-11 Canon Kabushiki Kaisha Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium
GB2095030B (en) * 1981-01-08 1985-06-12 Canon Kk Photoconductive member
US4490450A (en) * 1982-03-31 1984-12-25 Canon Kabushiki Kaisha Photoconductive member

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3212184A1 (de) * 1981-04-17 1982-11-11 Kawamura, Takao, Sakai, Osaka Lichtempfindliches element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3610401A1 (de) * 1985-03-28 1987-02-12 Sumitomo Electric Industries Halbleiterelement und verfahren zu dessen herstellung und gegenstand, in dem dieses element verwendet wird

Also Published As

Publication number Publication date
JPH0145989B2 (enExample) 1989-10-05
FR2555819A1 (fr) 1985-05-31
GB2148018A (en) 1985-05-22
GB8421391D0 (en) 1984-09-26
US4569892A (en) 1986-02-11
FR2555819B1 (fr) 1987-02-06
GB2148018B (en) 1987-01-28
JPS6045078A (ja) 1985-03-11
DE3430923C2 (enExample) 1988-12-22

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition