DE3430913C2 - - Google Patents

Info

Publication number
DE3430913C2
DE3430913C2 DE3430913A DE3430913A DE3430913C2 DE 3430913 C2 DE3430913 C2 DE 3430913C2 DE 3430913 A DE3430913 A DE 3430913A DE 3430913 A DE3430913 A DE 3430913A DE 3430913 C2 DE3430913 C2 DE 3430913C2
Authority
DE
Germany
Prior art keywords
layer
atoms
recording material
electrophotographic recording
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3430913A
Other languages
German (de)
English (en)
Other versions
DE3430913A1 (de
Inventor
Keishi Ibaraki Jp Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3430913A1 publication Critical patent/DE3430913A1/de
Application granted granted Critical
Publication of DE3430913C2 publication Critical patent/DE3430913C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
DE19843430913 1983-08-23 1984-08-22 Fotoleitendes aufzeichnungsmaterial Granted DE3430913A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58153673A JPS6045257A (ja) 1983-08-23 1983-08-23 電子写真用光導電部材

Publications (2)

Publication Number Publication Date
DE3430913A1 DE3430913A1 (de) 1985-03-21
DE3430913C2 true DE3430913C2 (enExample) 1988-12-01

Family

ID=15567667

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843430913 Granted DE3430913A1 (de) 1983-08-23 1984-08-22 Fotoleitendes aufzeichnungsmaterial

Country Status (5)

Country Link
US (1) US4571370A (enExample)
JP (1) JPS6045257A (enExample)
DE (1) DE3430913A1 (enExample)
FR (1) FR2551266B1 (enExample)
GB (1) GB2147713B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0812932B2 (ja) * 1985-12-06 1996-02-07 キヤノン株式会社 フォトセンサアレイ
JP4171428B2 (ja) * 2003-03-20 2008-10-22 三洋電機株式会社 光起電力装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4471042A (en) * 1978-05-04 1984-09-11 Canon Kabushiki Kaisha Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium
JPS56150753A (en) * 1980-04-23 1981-11-21 Canon Inc Image forming member for electrophotography
DE3117037C2 (de) * 1980-05-08 1987-05-14 Takao Sakai Osaka Kawamura Elektrophotografisches Aufzeichnungsmaterial
GB2095030B (en) * 1981-01-08 1985-06-12 Canon Kk Photoconductive member
JPS57115552A (en) * 1981-01-08 1982-07-19 Nippon Telegr & Teleph Corp <Ntt> Electrophotographic receptor
JPS57172344A (en) * 1981-04-17 1982-10-23 Minolta Camera Co Ltd Electrophotographic photorecepter
US4490450A (en) * 1982-03-31 1984-12-25 Canon Kabushiki Kaisha Photoconductive member

Also Published As

Publication number Publication date
FR2551266A1 (fr) 1985-03-01
DE3430913A1 (de) 1985-03-21
JPS6045257A (ja) 1985-03-11
GB2147713A (en) 1985-05-15
GB8420727D0 (en) 1984-09-19
JPH0217023B2 (enExample) 1990-04-19
FR2551266B1 (fr) 1991-03-15
GB2147713B (en) 1987-01-28
US4571370A (en) 1986-02-18

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition