DE3381231D1 - Verfahren zur erzeugung von strukturen in polymerfilmen in einer plasmaaetzeinrichtung. - Google Patents

Verfahren zur erzeugung von strukturen in polymerfilmen in einer plasmaaetzeinrichtung.

Info

Publication number
DE3381231D1
DE3381231D1 DE8383111765T DE3381231T DE3381231D1 DE 3381231 D1 DE3381231 D1 DE 3381231D1 DE 8383111765 T DE8383111765 T DE 8383111765T DE 3381231 T DE3381231 T DE 3381231T DE 3381231 D1 DE3381231 D1 DE 3381231D1
Authority
DE
Germany
Prior art keywords
polymer films
plasma apparatus
producing structures
structures
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8383111765T
Other languages
English (en)
Inventor
James Tien-Cheng Yeh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3381231D1 publication Critical patent/DE3381231D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/914—Differential etching apparatus including particular materials of construction

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
DE8383111765T 1983-04-20 1983-11-24 Verfahren zur erzeugung von strukturen in polymerfilmen in einer plasmaaetzeinrichtung. Expired - Fee Related DE3381231D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/486,629 US4451349A (en) 1983-04-20 1983-04-20 Electrode treatment for plasma patterning of polymers

Publications (1)

Publication Number Publication Date
DE3381231D1 true DE3381231D1 (de) 1990-03-29

Family

ID=23932623

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383111765T Expired - Fee Related DE3381231D1 (de) 1983-04-20 1983-11-24 Verfahren zur erzeugung von strukturen in polymerfilmen in einer plasmaaetzeinrichtung.

Country Status (5)

Country Link
US (1) US4451349A (de)
EP (1) EP0128242B1 (de)
JP (1) JPS59195832A (de)
CA (1) CA1191109A (de)
DE (1) DE3381231D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166030A (ja) * 1985-01-17 1986-07-26 Matsushita Electronics Corp レジストエツチ速度抑制方法
JPS6240729A (ja) * 1985-08-15 1987-02-21 Sony Corp エツチング装置
US5800618A (en) * 1992-11-12 1998-09-01 Ngk Insulators, Ltd. Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof
US5486235A (en) * 1993-08-09 1996-01-23 Applied Materials, Inc. Plasma dry cleaning of semiconductor processing chambers
DE69429243T2 (de) * 1993-11-18 2002-06-27 Ngk Insulators, Ltd. Elektrode zur herstellung von plasma und verfahren zur herstellung der elektrode
JP3019002B2 (ja) * 1996-09-20 2000-03-13 日本電気株式会社 ドライエッチング装置及びドライエッチング方法
US6242364B1 (en) 1999-03-23 2001-06-05 Silicon Valley Group, Inc. Plasma deposition of spin chucks to reduce contamination of silicon wafers
US20040087054A1 (en) * 2002-10-18 2004-05-06 Applied Materials, Inc. Disposable barrier technique for through wafer etching in MEMS
KR20210076043A (ko) * 2018-10-23 2021-06-23 에이치제트오 인코포레이티드 코팅된 기판의 플라즈마 애싱

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5414679A (en) * 1977-07-06 1979-02-03 Hitachi Ltd Plasma etching device
US4244799A (en) * 1978-09-11 1981-01-13 Bell Telephone Laboratories, Incorporated Fabrication of integrated circuits utilizing thick high-resolution patterns
US4199650A (en) * 1978-11-07 1980-04-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Modification of the electrical and optical properties of polymers
JPS55154582A (en) * 1979-05-21 1980-12-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Gas plasma etching method
US4243476A (en) * 1979-06-29 1981-01-06 International Business Machines Corporation Modification of etch rates by solid masking materials
JPS56105483A (en) * 1980-01-25 1981-08-21 Mitsubishi Electric Corp Dry etching device
US4333793A (en) * 1980-10-20 1982-06-08 Bell Telephone Laboratories, Incorporated High-selectivity plasma-assisted etching of resist-masked layer
US4397724A (en) * 1981-08-24 1983-08-09 Bell Telephone Laboratories, Incorporated Apparatus and method for plasma-assisted etching of wafers

Also Published As

Publication number Publication date
EP0128242A2 (de) 1984-12-19
CA1191109A (en) 1985-07-30
EP0128242A3 (en) 1987-05-06
JPS59195832A (ja) 1984-11-07
US4451349A (en) 1984-05-29
EP0128242B1 (de) 1990-02-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee