DE3376186D1 - Dry-etching process and its use - Google Patents

Dry-etching process and its use

Info

Publication number
DE3376186D1
DE3376186D1 DE8383107604T DE3376186T DE3376186D1 DE 3376186 D1 DE3376186 D1 DE 3376186D1 DE 8383107604 T DE8383107604 T DE 8383107604T DE 3376186 T DE3376186 T DE 3376186T DE 3376186 D1 DE3376186 D1 DE 3376186D1
Authority
DE
Germany
Prior art keywords
dry
etching process
etching
cpds
contg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383107604T
Other languages
German (de)
English (en)
Inventor
Frank Dr Dipl Chem Druschke
Georg Kraus
Ulrich Dr Dipl Chem Kunzel
Wolf-Dieter Dipl Ing Ruh
Rolf Dr Schafer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
International Business Machines Corp
Original Assignee
IBM Deutschland GmbH
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM Deutschland GmbH, International Business Machines Corp filed Critical IBM Deutschland GmbH
Application granted granted Critical
Publication of DE3376186D1 publication Critical patent/DE3376186D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/08—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by electric discharge, e.g. by spark erosion
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0166—Polymeric layer used for special processing, e.g. resist for etching insulating material or photoresist used as a mask during plasma etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09—Treatments involving charged particles
    • H05K2203/095—Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Drying Of Semiconductors (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
DE8383107604T 1983-08-02 1983-08-02 Dry-etching process and its use Expired DE3376186D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP83107604A EP0133621B1 (de) 1983-08-02 1983-08-02 Verfahren zum Trockenätzen von Kupfer und seine Verwendung

Publications (1)

Publication Number Publication Date
DE3376186D1 true DE3376186D1 (en) 1988-05-05

Family

ID=8190613

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383107604T Expired DE3376186D1 (en) 1983-08-02 1983-08-02 Dry-etching process and its use

Country Status (4)

Country Link
US (1) US4557796A (https=)
EP (1) EP0133621B1 (https=)
JP (1) JPS6086285A (https=)
DE (1) DE3376186D1 (https=)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5354416A (en) * 1986-09-05 1994-10-11 Sadayuki Okudaira Dry etching method
DE3752140T2 (de) * 1986-09-05 1998-03-05 Hitachi Ltd Trockenes Ätzverfahren
US4689111A (en) * 1986-10-28 1987-08-25 International Business Machines Corp. Process for promoting the interlaminate adhesion of polymeric materials to metal surfaces
US4838994A (en) * 1987-06-26 1989-06-13 Siemens Aktiengesellschaft Method for structuring a copper and/or permalloy layer by means of dry etching
US4980338A (en) * 1987-11-16 1990-12-25 Semiconductor Energy Laboratory Co., Ltd. Method of producing superconducting ceramic patterns by etching
JPH01308028A (ja) * 1988-06-07 1989-12-12 Fujitsu Ltd 銅もしくは銅合金電極配線の形成方法
DE69012084T2 (de) * 1989-12-20 1995-01-19 Texas Instruments Inc Verfahren zum Ätzen von Kupfer und dadurch hergestelltes gedrucktes Schaltbild.
US5100499A (en) * 1989-12-20 1992-03-31 Texas Instruments Incorporated Copper dry etch process using organic and amine radicals
US5318662A (en) * 1989-12-20 1994-06-07 Texas Instruments Incorporated Copper etch process using halides
JPH04329640A (ja) * 1991-05-01 1992-11-18 Mitsubishi Electric Corp 配線層のドライエッチング方法
JPH05171471A (ja) * 1991-12-17 1993-07-09 Nec Corp ３ｄ遷移金属を含む物質のエッチング方法
US5399239A (en) * 1992-12-18 1995-03-21 Ceridian Corporation Method of fabricating conductive structures on substrates
JPH06326059A (ja) * 1993-05-17 1994-11-25 Fujitsu Ltd 銅薄膜のエッチング方法
US5824604A (en) * 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist
US6010603A (en) 1997-07-09 2000-01-04 Applied Materials, Inc. Patterned copper etch for micron and submicron features, using enhanced physical bombardment
US6130182A (en) * 1997-07-25 2000-10-10 International Business Machines Corporation Dielectric catalyst structures
US6197267B1 (en) 1997-07-25 2001-03-06 International Business Machines Corporation Catalytic reactor
US6193832B1 (en) 1997-07-25 2001-02-27 International Business Machines Corporation Method of making dielectric catalyst structures
US6008140A (en) 1997-08-13 1999-12-28 Applied Materials, Inc. Copper etch using HCI and HBr chemistry
JP2003526191A (ja) * 1997-08-13 2003-09-02 アプライド マテリアルズ インコーポレイテッド 半導体デバイス用銅エッチング方法
US6033992A (en) * 1997-08-19 2000-03-07 Micron Technology, Inc. Method for etching metals using organohalide compounds
US6379576B2 (en) 1997-11-17 2002-04-30 Mattson Technology, Inc. Systems and methods for variable mode plasma enhanced processing of semiconductor wafers
TWI246633B (en) 1997-12-12 2006-01-01 Applied Materials Inc Method of pattern etching a low k dielectric layen
US6143476A (en) * 1997-12-12 2000-11-07 Applied Materials Inc Method for high temperature etching of patterned layers using an organic mask stack
KR100450128B1 (ko) * 2002-06-20 2004-09-30 동부전자 주식회사 반도체 소자의 제조 방법
US20040084407A1 (en) * 2002-10-31 2004-05-06 Nptest, Inc. Method for surface preparation to enable uniform etching of polycrystalline materials
JP4111274B2 (ja) * 2003-07-24 2008-07-02 キヤノンアネルバ株式会社 磁性材料のドライエッチング方法
US8633117B1 (en) 2012-11-07 2014-01-21 International Business Machines Corporation Sputter and surface modification etch processing for metal patterning in integrated circuits
US8871107B2 (en) 2013-03-15 2014-10-28 International Business Machines Corporation Subtractive plasma etching of a blanket layer of metal or metal alloy
JP2017033982A (ja) 2015-07-29 2017-02-09 東京エレクトロン株式会社 多層膜をエッチングする方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814507B2 (ja) * 1975-07-09 1983-03-19 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション シリコンを選択的にイオン食刻する方法
JPS5293640A (en) * 1976-02-03 1977-08-06 Mitsubishi Electric Corp Plasm etching method
US4352716A (en) * 1980-12-24 1982-10-05 International Business Machines Corporation Dry etching of copper patterns
US4416725A (en) * 1982-12-30 1983-11-22 International Business Machines Corporation Copper texturing process
US4468284A (en) * 1983-07-06 1984-08-28 Psi Star, Inc. Process for etching an aluminum-copper alloy

Also Published As

Publication number Publication date
JPS6140757B2 (https=) 1986-09-10
JPS6086285A (ja) 1985-05-15
EP0133621A1 (de) 1985-03-06
US4557796A (en) 1985-12-10
EP0133621B1 (de) 1988-03-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee