DE3375433D1 - Optical lithography process for creating patterns in a silicon semiconductor substrate - Google Patents

Optical lithography process for creating patterns in a silicon semiconductor substrate

Info

Publication number
DE3375433D1
DE3375433D1 DE8383100693T DE3375433T DE3375433D1 DE 3375433 D1 DE3375433 D1 DE 3375433D1 DE 8383100693 T DE8383100693 T DE 8383100693T DE 3375433 T DE3375433 T DE 3375433T DE 3375433 D1 DE3375433 D1 DE 3375433D1
Authority
DE
Germany
Prior art keywords
semiconductor substrate
silicon semiconductor
lithography process
optical lithography
creating patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383100693T
Other languages
English (en)
Inventor
Leon H Kaplan
Richard Dean Kaplan
Steven Michael Zimmerman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3375433D1 publication Critical patent/DE3375433D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE8383100693T 1982-02-26 1983-01-26 Optical lithography process for creating patterns in a silicon semiconductor substrate Expired DE3375433D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/352,929 US4414314A (en) 1982-02-26 1982-02-26 Resolution in optical lithography

Publications (1)

Publication Number Publication Date
DE3375433D1 true DE3375433D1 (en) 1988-02-25

Family

ID=23387052

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383100693T Expired DE3375433D1 (en) 1982-02-26 1983-01-26 Optical lithography process for creating patterns in a silicon semiconductor substrate

Country Status (4)

Country Link
US (1) US4414314A (de)
EP (1) EP0087582B1 (de)
JP (1) JPS58149045A (de)
DE (1) DE3375433D1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612452B2 (ja) * 1982-09-30 1994-02-16 ブリュ−ワ−・サイエンス・インコ−ポレイテッド 集積回路素子の製造方法
DE3324795A1 (de) * 1983-07-09 1985-01-17 Merck Patent Gmbh, 6100 Darmstadt Negativ arbeitende fotoresistzusammensetzungen mit strahlungsabsorbierenden zusaetzen
JPS6088941A (ja) * 1983-10-21 1985-05-18 Nagase Kasei Kogyo Kk フオトレジスト組成物
US4529685A (en) * 1984-03-02 1985-07-16 Advanced Micro Devices, Inc. Method for making integrated circuit devices using a layer of indium arsenide as an antireflective coating
US4902770A (en) * 1984-03-06 1990-02-20 Tokyo Ohka Kogyo Co., Ltd. Undercoating material for photosensitive resins
JPS60220931A (ja) * 1984-03-06 1985-11-05 Tokyo Ohka Kogyo Co Ltd 感光性樹脂用下地材料
US4535053A (en) * 1984-06-11 1985-08-13 General Electric Company Multilayer photoresist process utilizing cinnamic acid derivatives as absorbant dyes
JPS61122649A (ja) * 1984-11-19 1986-06-10 Fuji Photo Film Co Ltd ポジ型感光性平版印刷版
US4828960A (en) * 1985-01-07 1989-05-09 Honeywell Inc. Reflection limiting photoresist composition with two azo dyes
US5334481A (en) * 1985-05-02 1994-08-02 Ciba-Geigy Corporation Positive diazo quinone photoresist compositions containing antihalation compound
US4650745A (en) * 1985-06-04 1987-03-17 Philip A. Hunt Chemical Corporation Method of forming a resist pattern by radiation exposure of positive-working resist coating comprising a dye and a trihydroxybenzophenone compound and subsequent aqueous alkaline development
US4626492A (en) * 1985-06-04 1986-12-02 Olin Hunt Specialty Products, Inc. Positive-working o-quinone diazide photoresist composition containing a dye and a trihydroxybenzophenone compound
CA1321315C (en) * 1986-04-11 1993-08-17 Yoichi Mori Printing plate
JPH01204045A (ja) * 1988-02-10 1989-08-16 Nec Corp パターン形成方法
JPH022568A (ja) * 1988-06-15 1990-01-08 Nec Corp パターン形成方法
EP0379924A3 (de) * 1989-01-23 1990-11-07 Siemens Aktiengesellschaft Vefahren zur Verringerung reflektionsbedingter Srukturgrössenschwankungen in einer Deckschicht bei der in der Herstellung integrierten Schaltungen in einem Substrat verwendeten optischen Lithographie
JPH02139011U (de) * 1989-04-27 1990-11-20
JPH06255232A (ja) * 1991-09-11 1994-09-13 Cmk Corp プリント配線板の製造方法
EP2562599B1 (de) 2009-01-29 2014-12-10 Digiflex Ltd. Verfahren zur Herstellung einer Fotomaske auf einer Fotopolymeroberfläche

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1655127A (en) * 1925-08-28 1928-01-03 Wadsworth Watch Case Co Photographic and etching process and product
DE1597597A1 (de) * 1967-09-14 1970-09-24 Wilhelm Guckert Verfahren zur Reduzierung der Unterstrahlungseffekte bei Kopierverfahren der graphischen Technik,insbesondere im Hinblick auf lichtempfindliche Schichten,die auf metallische Oberflaechen (Offsetdruckplatten- und Folien,Metallplatten fuer die Herstellung von Hochdruckklischees,kupferkaschiertes Isolationsm
JPS498182A (de) * 1972-05-10 1974-01-24
US3884698A (en) * 1972-08-23 1975-05-20 Hewlett Packard Co Method for achieving uniform exposure in a photosensitive material on a semiconductor wafer
JPS5158072A (ja) * 1974-11-18 1976-05-21 Matsushita Electric Ind Co Ltd Handotaisochinoseizohoho
US4023185A (en) * 1976-03-19 1977-05-10 Rca Corporation Ablative optical recording medium
JPS5346700A (en) * 1976-10-12 1978-04-26 Fujitsu Ltd Exposuring method for resist
US4102683A (en) * 1977-02-10 1978-07-25 Rca Corp. Nonreflecting photoresist process
US4328298A (en) * 1979-06-27 1982-05-04 The Perkin-Elmer Corporation Process for manufacturing lithography masks
US4348471A (en) * 1981-06-15 1982-09-07 Polychrome Corporation Positive acting composition yielding pre-development high visibility image after radiation exposure comprising acid free novolak, diazo oxide and acid sensitive dyestuff

Also Published As

Publication number Publication date
US4414314A (en) 1983-11-08
EP0087582A3 (en) 1985-01-23
EP0087582A2 (de) 1983-09-07
JPS58149045A (ja) 1983-09-05
JPH0160813B2 (de) 1989-12-26
EP0087582B1 (de) 1988-01-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee