DE3373962D1 - Monolithic semiconductor integrated a.c. switch circuit - Google Patents

Monolithic semiconductor integrated a.c. switch circuit

Info

Publication number
DE3373962D1
DE3373962D1 DE8383103301T DE3373962T DE3373962D1 DE 3373962 D1 DE3373962 D1 DE 3373962D1 DE 8383103301 T DE8383103301 T DE 8383103301T DE 3373962 T DE3373962 T DE 3373962T DE 3373962 D1 DE3373962 D1 DE 3373962D1
Authority
DE
Germany
Prior art keywords
switch circuit
semiconductor integrated
monolithic semiconductor
monolithic
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383103301T
Other languages
German (de)
English (en)
Inventor
Yuji Komatu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3373962D1 publication Critical patent/DE3373962D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/68—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors specially adapted for switching AC currents or voltages

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Bipolar Integrated Circuits (AREA)
DE8383103301T 1982-04-01 1983-04-05 Monolithic semiconductor integrated a.c. switch circuit Expired DE3373962D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57054706A JPS58172019A (ja) 1982-04-01 1982-04-01 半導体スイツチ回路

Publications (1)

Publication Number Publication Date
DE3373962D1 true DE3373962D1 (en) 1987-11-05

Family

ID=12978237

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383103301T Expired DE3373962D1 (en) 1982-04-01 1983-04-05 Monolithic semiconductor integrated a.c. switch circuit

Country Status (4)

Country Link
US (1) US4633095A (cg-RX-API-DMAC10.html)
EP (1) EP0091119B1 (cg-RX-API-DMAC10.html)
JP (1) JPS58172019A (cg-RX-API-DMAC10.html)
DE (1) DE3373962D1 (cg-RX-API-DMAC10.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62161214A (ja) * 1985-12-28 1987-07-17 Sharp Corp 発光ダイオードのパルス駆動回路
US5051612A (en) * 1989-02-10 1991-09-24 Texas Instruments Incorporated Prevention of parasitic mechanisms in junction isolated devices
US5021682A (en) * 1989-05-11 1991-06-04 National Semiconductor Corporation Instantaneous power limiting circuit
JP4104172B2 (ja) * 1997-03-04 2008-06-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 大信号電圧に対する集積双方向トランジスタスイッチ
JP3788616B2 (ja) * 2003-04-02 2006-06-21 ローム株式会社 電圧検出回路
JP4800688B2 (ja) * 2005-07-08 2011-10-26 パナソニック株式会社 ミューティング回路を設けた半導体集積回路
US8526635B2 (en) 2010-07-01 2013-09-03 Conexant Systems, Inc. Grounding switch method and apparatus
CN103675636B (zh) * 2012-09-20 2016-12-21 中芯国际集成电路制造(上海)有限公司 一种晶体管阈值电压的测试电路
JP6221975B2 (ja) * 2014-07-22 2017-11-01 トヨタ紡織株式会社 駆動回路及びそれを用いた車室内照明装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA862287A (en) * 1968-01-13 1971-01-26 Edward D. Rosenthal Bilateral switch
JPS4934013A (cg-RX-API-DMAC10.html) * 1972-08-01 1974-03-29
CH541850A (de) * 1972-12-12 1973-09-15 Studer Willi Fa Halbleiteranordnung zum Schalten von Wechselströmen für Vormagnetisierungs- und Löschzwecke in Magnetbandgeräten
US3937987A (en) * 1974-04-11 1976-02-10 Rca Corporation Threshold detector
JPS50154914U (cg-RX-API-DMAC10.html) * 1974-06-10 1975-12-22
JPS5523995Y2 (cg-RX-API-DMAC10.html) * 1976-06-22 1980-06-07
DE2655237C3 (de) * 1976-12-06 1980-01-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Schaltvorrichtung mit Transistoren
US4137428A (en) * 1977-10-27 1979-01-30 Bell Telephone Laboratories, Incorporated Optically actuated bidirectional semiconductor switch
JPS5830152A (ja) * 1981-08-17 1983-02-22 Toshiba Corp 半導体集積回路

Also Published As

Publication number Publication date
EP0091119B1 (en) 1987-09-30
EP0091119A3 (en) 1985-01-16
EP0091119A2 (en) 1983-10-12
JPS58172019A (ja) 1983-10-08
JPH035688B2 (cg-RX-API-DMAC10.html) 1991-01-28
US4633095A (en) 1986-12-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP