DE3369431D1 - Field-effect controlled bi-directional lateral thyristor - Google Patents
Field-effect controlled bi-directional lateral thyristorInfo
- Publication number
- DE3369431D1 DE3369431D1 DE8383901003T DE3369431T DE3369431D1 DE 3369431 D1 DE3369431 D1 DE 3369431D1 DE 8383901003 T DE8383901003 T DE 8383901003T DE 3369431 T DE3369431 T DE 3369431T DE 3369431 D1 DE3369431 D1 DE 3369431D1
- Authority
- DE
- Germany
- Prior art keywords
- field
- effect controlled
- lateral thyristor
- directional lateral
- directional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34709482A | 1982-02-09 | 1982-02-09 | |
PCT/US1983/000143 WO1983002852A1 (en) | 1982-02-09 | 1983-02-01 | Field-effect controlled bi-directional lateral thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3369431D1 true DE3369431D1 (en) | 1987-02-26 |
Family
ID=23362289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383901003T Expired DE3369431D1 (en) | 1982-02-09 | 1983-02-01 | Field-effect controlled bi-directional lateral thyristor |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0099926B1 (de) |
JP (1) | JPH0666421B2 (de) |
CA (1) | CA1191969A (de) |
DE (1) | DE3369431D1 (de) |
GB (1) | GB2125622B (de) |
WO (1) | WO1983002852A1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3465225D1 (en) * | 1983-02-17 | 1987-09-10 | Nissan Motor | A vertical-type mosfet and method of fabricating the same |
JPH07120799B2 (ja) * | 1988-04-01 | 1995-12-20 | 株式会社日立製作所 | 半導体装置 |
JPH07112150B2 (ja) * | 1989-04-28 | 1995-11-29 | 株式会社東芝 | 光トリガースイッチング回路 |
US5278076A (en) * | 1990-02-28 | 1994-01-11 | At&T Bell Laboratories | Method of marking a lateral mos controlled thyristor |
US8890248B2 (en) | 2004-08-26 | 2014-11-18 | Texas Instruments Incorporation | Bi-directional ESD protection circuit |
SE533045C2 (sv) * | 2008-09-09 | 2010-06-15 | Bae Systems Bofors Ab | Verkansdel med valbar initiering |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1388437A (en) * | 1972-08-25 | 1975-03-26 | Nat Res Dev | Electronic switching circuits |
US3816763A (en) * | 1972-10-02 | 1974-06-11 | Gen Electric | Zero voltage switching photon coupled relay |
JPS5250673B2 (de) * | 1973-09-14 | 1977-12-26 | ||
US3938176A (en) * | 1973-09-24 | 1976-02-10 | Texas Instruments Incorporated | Process for fabricating dielectrically isolated semiconductor components of an integrated circuit |
US3940634A (en) * | 1975-02-14 | 1976-02-24 | Rockwell International Corporation | Solid state AC power relay |
JPS5233466A (en) * | 1975-09-10 | 1977-03-14 | Hitachi Ltd | Semiconductor switch |
JPS534458A (en) * | 1976-07-02 | 1978-01-17 | Hitachi Ltd | Pnpn switch driving circuit |
JPS53120361A (en) * | 1977-03-30 | 1978-10-20 | Hitachi Ltd | Thyristor driver circuit |
US4137428A (en) * | 1977-10-27 | 1979-01-30 | Bell Telephone Laboratories, Incorporated | Optically actuated bidirectional semiconductor switch |
JPS5940343B2 (ja) * | 1978-01-31 | 1984-09-29 | 日本電気株式会社 | 電話交換機における交流電流送出用トランク |
US4302687A (en) * | 1978-04-20 | 1981-11-24 | Nippon Electric Co., Ltd. | Semiconductor switch |
US4199774A (en) * | 1978-09-18 | 1980-04-22 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithic semiconductor switching device |
JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
US4227098A (en) * | 1979-02-21 | 1980-10-07 | General Electric Company | Solid state relay |
SE430450B (sv) * | 1979-04-03 | 1983-11-14 | Asea Ab | Tvapoligt overstromsskydd for inkoppling i en stromforande ledning |
US4321644A (en) * | 1979-05-24 | 1982-03-23 | The Boeing Company | Power line transient limiter |
US4295058A (en) * | 1979-06-07 | 1981-10-13 | Eaton Corporation | Radiant energy activated semiconductor switch |
US4303831A (en) * | 1979-07-30 | 1981-12-01 | Bell Telephone Laboratories, Incorporated | Optically triggered linear bilateral switch |
DE3071552D1 (en) * | 1979-09-21 | 1986-05-22 | Hitachi Ltd | Semiconductor switch |
DE3012185A1 (de) * | 1980-03-28 | 1981-10-08 | Siemens AG, 1000 Berlin und 8000 München | Feldeffekttransistor |
EP0047392B1 (de) * | 1980-08-25 | 1986-11-20 | Deutsche ITT Industries GmbH | Hochvolt-Halbleiterschalter |
-
1983
- 1983-02-01 GB GB08326694A patent/GB2125622B/en not_active Expired
- 1983-02-01 JP JP58500991A patent/JPH0666421B2/ja not_active Expired - Lifetime
- 1983-02-01 EP EP83901003A patent/EP0099926B1/de not_active Expired
- 1983-02-01 WO PCT/US1983/000143 patent/WO1983002852A1/en active IP Right Grant
- 1983-02-01 DE DE8383901003T patent/DE3369431D1/de not_active Expired
- 1983-02-08 CA CA000421155A patent/CA1191969A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB8326694D0 (en) | 1983-11-09 |
EP0099926B1 (de) | 1987-01-21 |
EP0099926A1 (de) | 1984-02-08 |
CA1191969A (en) | 1985-08-13 |
EP0099926A4 (de) | 1984-07-26 |
JPS59500157A (ja) | 1984-01-26 |
GB2125622B (en) | 1985-10-02 |
JPH0666421B2 (ja) | 1994-08-24 |
GB2125622A (en) | 1984-03-07 |
WO1983002852A1 (en) | 1983-08-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN |
|
8339 | Ceased/non-payment of the annual fee |