DE3367486D1 - Integrated circuit resistor structure - Google Patents

Integrated circuit resistor structure

Info

Publication number
DE3367486D1
DE3367486D1 DE8383106489T DE3367486T DE3367486D1 DE 3367486 D1 DE3367486 D1 DE 3367486D1 DE 8383106489 T DE8383106489 T DE 8383106489T DE 3367486 T DE3367486 T DE 3367486T DE 3367486 D1 DE3367486 D1 DE 3367486D1
Authority
DE
Germany
Prior art keywords
integrated circuit
resistor structure
circuit resistor
integrated
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383106489T
Other languages
German (de)
English (en)
Inventor
Kwang Kon Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3367486D1 publication Critical patent/DE3367486D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0156—Manufacture or treatment of devices comprising Nb or an alloy of Nb with one or more of the elements of group IVB, e.g. titanium, zirconium or hafnium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/812—Stock
    • Y10S505/813—Wire, tape, or film
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12819—Group VB metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12889—Au-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Contacts (AREA)
DE8383106489T 1982-12-30 1983-07-04 Integrated circuit resistor structure Expired DE3367486D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/454,911 US4459321A (en) 1982-12-30 1982-12-30 Process for applying closely overlapped mutually protective barrier films

Publications (1)

Publication Number Publication Date
DE3367486D1 true DE3367486D1 (en) 1986-12-11

Family

ID=23806579

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383106489T Expired DE3367486D1 (en) 1982-12-30 1983-07-04 Integrated circuit resistor structure

Country Status (5)

Country Link
US (2) US4459321A (OSRAM)
EP (1) EP0114920B1 (OSRAM)
JP (1) JPS59127323A (OSRAM)
CA (1) CA1188428A (OSRAM)
DE (1) DE3367486D1 (OSRAM)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4700462A (en) * 1986-10-08 1987-10-20 Hughes Aircraft Company Process for making a T-gated transistor
US4857418A (en) * 1986-12-08 1989-08-15 Honeywell Inc. Resistive overlayer for magnetic films
US4754431A (en) * 1987-01-28 1988-06-28 Honeywell Inc. Vialess shorting bars for magnetoresistive devices
DE59203408D1 (de) * 1991-01-21 1995-10-05 Siemens Ag Verfahren zur Herstellung eines strukturierten Aufbaus mit Hochtemperatursupraleitermaterial.
US5474834A (en) * 1992-03-09 1995-12-12 Kyocera Corporation Superconducting circuit sub-assembly having an oxygen shielding barrier layer
US5502002A (en) * 1992-05-21 1996-03-26 Hughes Aircraft Company Polyimide passivation of GaAs microwave monolithic integrated circuit flip-chip
DE4320484A1 (de) * 1993-06-21 1994-12-22 Dornier Gmbh Steuerbares Supraleiter-Bauelement
JP3360461B2 (ja) * 1995-01-31 2002-12-24 ソニー株式会社 メタル成膜工程の前処理方法
US5641611A (en) * 1995-08-21 1997-06-24 Motorola Method of fabricating organic LED matrices
US6518673B2 (en) * 2001-06-15 2003-02-11 Trw Inc. Capacitor for signal propagation across ground plane boundaries in superconductor integrated circuits
AU2003235349A1 (en) * 2003-05-20 2004-12-13 Fujitsu Limited Electric contact device
US20060009038A1 (en) 2004-07-12 2006-01-12 International Business Machines Corporation Processing for overcoming extreme topography
US7135377B1 (en) * 2005-05-20 2006-11-14 Phoenix Precision Technology Corporation Semiconductor package substrate with embedded resistors and method for fabricating same
US7615385B2 (en) 2006-09-20 2009-11-10 Hypres, Inc Double-masking technique for increasing fabrication yield in superconducting electronics
TWI614916B (zh) * 2013-11-11 2018-02-11 Epistar Corporation 光電元件及其製造方法
JP6252123B2 (ja) * 2013-11-14 2017-12-27 日亜化学工業株式会社 発光素子の製造方法
CN104659175A (zh) * 2013-11-15 2015-05-27 晶元光电股份有限公司 光电元件及其制造方法
EP3072167A1 (en) * 2013-11-20 2016-09-28 Danmarks Tekniske Universitet Method for producing substrates for superconducting layers

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB492580A (en) * 1937-10-26 1938-09-22 Torrington Mfg Co Improvements in or relating to devices for forming or bending wound springs
US3386906A (en) * 1965-11-26 1968-06-04 Philips Corp Transistor base and method of making the same
US3754168A (en) * 1970-03-09 1973-08-21 Texas Instruments Inc Metal contact and interconnection system for nonhermetic enclosed semiconductor devices
US3701931A (en) * 1971-05-06 1972-10-31 Ibm Gold tantalum-nitrogen high conductivity metallurgy
US3907620A (en) * 1973-06-27 1975-09-23 Hewlett Packard Co A process of forming metallization structures on semiconductor devices
US3877063A (en) * 1973-06-27 1975-04-08 Hewlett Packard Co Metallization structure and process for semiconductor devices
US3913120A (en) * 1973-12-28 1975-10-14 Ibm Thin film resistors and contacts for circuitry
CH587567A5 (en) * 1975-08-28 1977-05-13 Ibm Josephson contact tunnel layer - is produced in reactor on base electrode and followed by counter electrode without interruption
US4075756A (en) * 1976-06-30 1978-02-28 International Business Machines Corporation Process for fabricating above and below ground plane wiring on one side of a supporting substrate and the resulting circuit configuration
US4316200A (en) * 1980-03-07 1982-02-16 International Business Machines Corporation Contact technique for electrical circuitry
US4310569A (en) * 1980-03-10 1982-01-12 Trw Inc. Method of adhesion of passivation layer to gold metalization regions in a semiconductor device
JPS5722216A (en) * 1980-07-17 1982-02-05 Nippon Kogaku Kk <Nikon> Observing device for cylindrical inside wall
JPS5735341A (en) * 1980-08-12 1982-02-25 Toshiba Corp Method of seperating elements of semiconductor device
US4421785A (en) * 1980-08-18 1983-12-20 Sperry Corporation Superconductive tunnel junction device and method of manufacture
DE3267500D1 (en) * 1982-03-12 1986-01-02 Ibm Process for producing niobium josephson junctions

Also Published As

Publication number Publication date
JPH0144024B2 (OSRAM) 1989-09-25
US4459321A (en) 1984-07-10
JPS59127323A (ja) 1984-07-23
EP0114920B1 (en) 1986-11-05
US4504552A (en) 1985-03-12
CA1188428A (en) 1985-06-04
EP0114920A1 (en) 1984-08-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee