DE3365149D1 - Pulling method of single crystals - Google Patents

Pulling method of single crystals

Info

Publication number
DE3365149D1
DE3365149D1 DE8383109194T DE3365149T DE3365149D1 DE 3365149 D1 DE3365149 D1 DE 3365149D1 DE 8383109194 T DE8383109194 T DE 8383109194T DE 3365149 T DE3365149 T DE 3365149T DE 3365149 D1 DE3365149 D1 DE 3365149D1
Authority
DE
Germany
Prior art keywords
single crystals
pulling method
pulling
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383109194T
Other languages
English (en)
Inventor
Toshihiro Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE3365149D1 publication Critical patent/DE3365149D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE8383109194T 1982-09-24 1983-09-16 Pulling method of single crystals Expired DE3365149D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16742382A JPS5957986A (ja) 1982-09-24 1982-09-24 単結晶引上方法

Publications (1)

Publication Number Publication Date
DE3365149D1 true DE3365149D1 (en) 1986-09-11

Family

ID=15849420

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383109194T Expired DE3365149D1 (en) 1982-09-24 1983-09-16 Pulling method of single crystals

Country Status (3)

Country Link
EP (1) EP0104559B1 (de)
JP (1) JPS5957986A (de)
DE (1) DE3365149D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232995A (ja) * 1983-06-10 1984-12-27 Sumitomo Electric Ind Ltd 引上単結晶の冷却方法
JPS6046993A (ja) * 1983-08-23 1985-03-14 Sumitomo Electric Ind Ltd 単結晶引上装置
JPS6046998A (ja) * 1983-08-26 1985-03-14 Sumitomo Electric Ind Ltd 単結晶引上方法及びそのための装置
JPS60239389A (ja) * 1984-05-11 1985-11-28 Sumitomo Electric Ind Ltd 単結晶引上装置
US4911896A (en) * 1986-07-24 1990-03-27 General Electric Company Fused quartz member for use in semiconductor manufacture
JPS63270391A (ja) * 1987-04-27 1988-11-08 Sumitomo Electric Ind Ltd Ｌｅｃ法による単結晶引き上げ方法
AU603220B2 (en) * 1987-05-05 1990-11-08 Schott Solar, Inc. System for controlling apparatus for growing tubular crystalline bodies
US4822449A (en) * 1987-06-10 1989-04-18 Massachusetts Institute Of Technology Heat transfer control during crystal growth
US4857278A (en) * 1987-07-13 1989-08-15 Massachusetts Institute Of Technology Control system for the czochralski process
JPH0484993U (de) * 1990-11-30 1992-07-23
EP0767396B1 (de) * 1995-09-20 2003-06-18 Mitsubishi Materials Corporation Frequenzumwandler und Frequenzumwandlungsverfahren mit Lithiumtetraborat, und optische Vorrichtung mit diesem Frequenzumwandler
KR101304717B1 (ko) * 2011-03-18 2013-09-05 주식회사 엘지실트론 잉곳 성장 제어시스템 및 이를 포함하는 잉곳 성장장치
JP2013256424A (ja) * 2012-06-14 2013-12-26 Sumitomo Metal Mining Co Ltd サファイア単結晶育成装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1409118A (fr) * 1963-09-27 1965-08-20 Westinghouse Electric Corp Appareil pour la production de matière cristalline semi-conductrièe
FR1435250A (fr) * 1964-03-23 1966-04-15 Westinghouse Electric Corp Appareil et procédé de contrôle de la croissance d'un cristal dendritique
US3795488A (en) * 1971-02-01 1974-03-05 Gen Electric Method for producing crystal boules with extensive flat, parallel facets

Also Published As

Publication number Publication date
JPS5957986A (ja) 1984-04-03
JPS644997B2 (de) 1989-01-27
EP0104559A1 (de) 1984-04-04
EP0104559B1 (de) 1986-08-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee