DE3361745D1 - High current pnp transistor being part of a monolithic integrated circuit - Google Patents
High current pnp transistor being part of a monolithic integrated circuitInfo
- Publication number
- DE3361745D1 DE3361745D1 DE8383400426T DE3361745T DE3361745D1 DE 3361745 D1 DE3361745 D1 DE 3361745D1 DE 8383400426 T DE8383400426 T DE 8383400426T DE 3361745 T DE3361745 T DE 3361745T DE 3361745 D1 DE3361745 D1 DE 3361745D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- high current
- pnp transistor
- monolithic integrated
- current pnp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8204216A FR2523370B1 (fr) | 1982-03-12 | 1982-03-12 | Transistor pnp fort courant faisant partie d'un circuit integre monolithique |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3361745D1 true DE3361745D1 (en) | 1986-02-20 |
Family
ID=9271933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383400426T Expired DE3361745D1 (en) | 1982-03-12 | 1983-03-02 | High current pnp transistor being part of a monolithic integrated circuit |
Country Status (4)
Country | Link |
---|---|
US (1) | US4564855A (de) |
EP (1) | EP0090686B1 (de) |
DE (1) | DE3361745D1 (de) |
FR (1) | FR2523370B1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61154063A (ja) * | 1984-12-26 | 1986-07-12 | Toshiba Corp | 光半導体装置およびその製造方法 |
JP2845869B2 (ja) * | 1985-03-25 | 1999-01-13 | 株式会社日立製作所 | 半導体集積回路装置 |
US4972247A (en) * | 1985-10-28 | 1990-11-20 | Silicon Systems, Inc. | High energy event protection for semiconductor devices |
IT1204244B (it) * | 1986-03-21 | 1989-03-01 | Sgs Microelettronica Spa | Struttura npn equivalente con tensione di rottura maggiorata rispetto alla tensione di rottura intrinseca dell'npn |
US5068702A (en) * | 1986-03-31 | 1991-11-26 | Exar Corporation | Programmable transistor |
IT1217322B (it) * | 1987-12-22 | 1990-03-22 | Sgs Microelettronica Spa | Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina |
US4979011A (en) * | 1989-12-15 | 1990-12-18 | Harris Corporation | SCR structure for fast turn-on switching |
EP0451423A1 (de) * | 1990-04-10 | 1991-10-16 | International Business Machines Corporation | Vertikale PNP-Transistorstruktur mit isoliertem Kollektor |
US5851857A (en) | 1996-09-04 | 1998-12-22 | Ixys Corporation | High voltage power MOS device |
DE10023101C1 (de) * | 2000-05-11 | 2001-09-27 | Infineon Technologies Ag | Bipolartransistor |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1559607A (de) * | 1967-06-30 | 1969-03-14 | ||
FR1538402A (fr) * | 1967-06-30 | 1968-09-06 | Radiotechnique Coprim Rtc | Procédé de fabrication de dispositifs semi-conducteurs intégrés |
FR1599607A (de) * | 1968-10-10 | 1970-07-15 | ||
US3868722A (en) * | 1970-06-20 | 1975-02-25 | Philips Corp | Semiconductor device having at least two transistors and method of manufacturing same |
JPS4842685A (de) * | 1971-09-30 | 1973-06-21 | ||
GB1507299A (en) * | 1974-03-26 | 1978-04-12 | Signetics Corp | Integrated semiconductor devices |
US4054900A (en) * | 1974-12-27 | 1977-10-18 | Tokyo Shibaura Electric Co., Ltd. | I.I.L. with region connecting base of double diffused injector to substrate/emitter of switching transistor |
CA1047652A (en) * | 1975-07-31 | 1979-01-30 | National Semiconductor Corporation | Monolithic integrated circuit transistor having very low collector resistance |
FR2373163A1 (fr) * | 1976-12-03 | 1978-06-30 | Thomson Csf | Structure pour circuits logiques |
-
1982
- 1982-03-12 FR FR8204216A patent/FR2523370B1/fr not_active Expired
-
1983
- 1983-03-02 EP EP83400426A patent/EP0090686B1/de not_active Expired
- 1983-03-02 DE DE8383400426T patent/DE3361745D1/de not_active Expired
- 1983-03-08 US US06/473,672 patent/US4564855A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0090686B1 (de) | 1986-01-08 |
FR2523370B1 (fr) | 1985-12-13 |
FR2523370A1 (fr) | 1983-09-16 |
US4564855A (en) | 1986-01-14 |
EP0090686A1 (de) | 1983-10-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2156616B (en) | A semiconductor integrated circuit | |
HK37985A (en) | A digital semiconductor monolithic integrated circuit | |
GB8500175D0 (en) | Semiconductor integrated circuit | |
EP0190027A3 (en) | Semiconductor integrated circuit | |
GB2135148B (en) | A semiconductor integrated circuit | |
JPS57159056A (en) | Reference voltage source for monolithic integrated circuit | |
DE3361745D1 (en) | High current pnp transistor being part of a monolithic integrated circuit | |
GB8531025D0 (en) | Bipolar transistor integrated circuit | |
DE3264667D1 (en) | Diode for monolithic integrated circuit | |
EP0250086A3 (en) | Electrical circuit utilizing a concentric collector pnp electrical circuit utilizing a concentric collector pnp transistor transistor | |
GB2030817B (en) | Monolithic semiconductor integrated circuit for television receivers | |
DE3373962D1 (en) | Monolithic semiconductor integrated a.c. switch circuit | |
DE3467434D1 (en) | A biasing circuit for multifunction bipolar integrated circuits | |
DE3274699D1 (en) | Method of making a monolithic integrated circuit with at least one bipolar planar transistor | |
DE3380891D1 (en) | Semiconductor integrated circuit | |
JPS56120158A (en) | Monolithic semiconductor integrated circuit | |
GB2151865B (en) | Semiconductor integrated circuit using vertical pnp transistors | |
JPS56142663A (en) | Monolithic integrated digital semiconductor circuit | |
DE3369892D1 (en) | A bias voltage supply circuit | |
GB2176960B (en) | Antisaturation circuit for integrated pnp transistor | |
DE3572232D1 (en) | Monolithic digital integrated circuit | |
JPS54162438A (en) | Monolithic integrated digital semiconductor circuit | |
GB8529382D0 (en) | Integrated circuit transistor | |
GB8301731D0 (en) | Semiconductor integrated circuit | |
JPS5691533A (en) | Monolithic integrated semiconductor circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |