DE3324594A1 - Verfahren zur herstellung eines halbleiter-lasers - Google Patents

Verfahren zur herstellung eines halbleiter-lasers

Info

Publication number
DE3324594A1
DE3324594A1 DE19833324594 DE3324594A DE3324594A1 DE 3324594 A1 DE3324594 A1 DE 3324594A1 DE 19833324594 DE19833324594 DE 19833324594 DE 3324594 A DE3324594 A DE 3324594A DE 3324594 A1 DE3324594 A1 DE 3324594A1
Authority
DE
Germany
Prior art keywords
groove
etching
semiconductor laser
layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19833324594
Other languages
German (de)
English (en)
Other versions
DE3324594C2 (enrdf_load_stackoverflow
Inventor
Ryoichi Hirano
Hirofumi Itami Hyogo Namizaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3324594A1 publication Critical patent/DE3324594A1/de
Application granted granted Critical
Publication of DE3324594C2 publication Critical patent/DE3324594C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE19833324594 1982-07-07 1983-07-07 Verfahren zur herstellung eines halbleiter-lasers Granted DE3324594A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57119362A JPS599990A (ja) 1982-07-07 1982-07-07 半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
DE3324594A1 true DE3324594A1 (de) 1984-01-26
DE3324594C2 DE3324594C2 (enrdf_load_stackoverflow) 1991-12-05

Family

ID=14759613

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833324594 Granted DE3324594A1 (de) 1982-07-07 1983-07-07 Verfahren zur herstellung eines halbleiter-lasers

Country Status (2)

Country Link
JP (1) JPS599990A (enrdf_load_stackoverflow)
DE (1) DE3324594A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0666625A1 (en) * 1994-01-31 1995-08-09 Mitsubishi Chemical Corporation Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61294695A (ja) * 1985-06-20 1986-12-25 Mitsubishi Electric Corp 半導体集積回路装置
JP2547459B2 (ja) * 1990-01-31 1996-10-23 シャープ株式会社 半導体レーザ素子及びその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2626775A1 (de) * 1975-06-23 1976-12-30 Xerox Corp Diodenlaser mit heterouebergang
GB1570479A (en) * 1978-02-14 1980-07-02 Standard Telephones Cables Ltd Heterostructure laser
US4321556A (en) * 1979-01-18 1982-03-23 Nippon Electric Co., Ltd. Semiconductor laser
DE3127618A1 (de) * 1980-07-16 1982-05-06 Sony Corp., Tokyo "halbleiterlaser und verfahren zu seiner herstellung"

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2626775A1 (de) * 1975-06-23 1976-12-30 Xerox Corp Diodenlaser mit heterouebergang
GB1570479A (en) * 1978-02-14 1980-07-02 Standard Telephones Cables Ltd Heterostructure laser
US4321556A (en) * 1979-01-18 1982-03-23 Nippon Electric Co., Ltd. Semiconductor laser
DE3127618A1 (de) * 1980-07-16 1982-05-06 Sony Corp., Tokyo "halbleiterlaser und verfahren zu seiner herstellung"

Non-Patent Citations (15)

* Cited by examiner, † Cited by third party
Title
ADACHI, S., KAWAGUCHI, H.: Chemical etching characteristics of (001) InP. In:J. Electrochem. Soc.: Solid-State Science and Technology, Vol. 128, 1981, Nr. 6, S. 1342-1349 *
ARAI, S. u.a.: 1.6 ?m wavelength GaInAsP/InP BH lasers. In: IEEE Journal of Quantum Electronics, Vol. QE-17, 1981, Nr. 5, S. 640-645
ARAI, S. u.a.:1.6 mum wavelength GaInAsP/InP BH lasers. In: IEEE Journal of Quantum Electronics, Vol. QE-17, 1981, Nr. 5, S. 640-645 *
FIGUEROA, L.,WANG, S.: Inverted-ridgewaveguide double-heterostructure injection laser with current and lateral optical confinement. In: Appl.Phys.Lett., Vol.31, 1977, Nr.1, S.45-47
HIRAO, M. u.a.: Fabrication and characterization of narrow stripe InGaAsP/InP buried hetero- structure lasers. In: Journal of Applied Physics, Vol. 51, 1980, Nr. 8, S. 4539-4540 *
IMAI, H. et al.: V-grooved-substrate buried heterostructure InGaAsP/InP laser diodes. In: Fujitsu Sci. Tech. J.,Vol.18, 1982, Nr.4, S. 541-561
ISHIKAWA, H. u.a.: In: IEEE J. of Quantum Electronics, Vol. QE-18,1982, Nr.10, S.1704-1711, Veröff.: October 1982
ISHIKAWA, H. u.a.: V-grooved substrate buried heterostructure InGaAsP/InP laser by one-step epitaxy. In: J.of Appl.Phys., Vol.53, 1982, Nr.4, S.2851-2853
ISHIKAWA,H. u.a.:V-grooved substrate buried heterostructure InGaAsP/InP laser. In: Electronics Letters, Vol. 17 1981, Nr. 13, S. 465-467 *
MUROTANI, T. u.a.: InGaAsP/InP buried crescent laser emitting at 1.3 ?m with very low threshold current. In: Electronics Letters, Vol. 16, 1980, Nr.14, S.566-568
MUROTANI, T. u.a.: InGaAsP/InP buried crescent laser emitting at 1.3 mum with very low threshold current. In: Electronics Letters, Vol. 16, 1980, Nr.14, S.566-568 *
OOMURA, E. u.a.:Low threshold InGaAsP/InP buried crescent laser with double current confinement structure. DOLLAR *
OOMURA, E. u.a.:Low threshold InGaAsP/InP buried crescent laser with double current confinement structure. In:IEEE J. of Quantum Electronics, Vol. QE-17, 1981, Nr.5, S.646 -650
TSUKADA, T.: GaAs-Ga?1-x? Al?x? As buried-heterostructure injection lasers. In:J. of Appl.Phys., Vol. 45, 1974, Nr.11, S.4899-4906
YU, K.L. u.a.: A groove GaInAsP laser on semi-insulating InP using a laterally diffused junction. In: IEEE J. of Quantum Electronics, Vol. QE-18, 1982, Nr.5,S.817-819

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0666625A1 (en) * 1994-01-31 1995-08-09 Mitsubishi Chemical Corporation Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode
US5566198A (en) * 1994-01-31 1996-10-15 Mitsubishi Chemical Corporation Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode
US5920767A (en) * 1994-01-31 1999-07-06 Mitsubishi Chemical Company Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode

Also Published As

Publication number Publication date
DE3324594C2 (enrdf_load_stackoverflow) 1991-12-05
JPS599990A (ja) 1984-01-19

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Legal Events

Date Code Title Description
OR8 Request for search as to paragraph 43 lit. 1 sentence 1 patent law
8105 Search report available
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee