DE3303266C2 - - Google Patents
Info
- Publication number
- DE3303266C2 DE3303266C2 DE3303266A DE3303266A DE3303266C2 DE 3303266 C2 DE3303266 C2 DE 3303266C2 DE 3303266 A DE3303266 A DE 3303266A DE 3303266 A DE3303266 A DE 3303266A DE 3303266 C2 DE3303266 C2 DE 3303266C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- recording material
- atoms
- material according
- amorphous layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08235—Silicon-based comprising three or four silicon-based layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/0825—Silicon-based comprising five or six silicon-based layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (16)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57014551A JPS58132243A (ja) | 1982-02-01 | 1982-02-01 | 光導電部材 |
| JP57014552A JPS58132244A (ja) | 1982-02-01 | 1982-02-01 | 光導電部材 |
| JP57016173A JPS58134643A (ja) | 1982-02-03 | 1982-02-03 | 光導電部材 |
| JP57016174A JPS58134644A (ja) | 1982-02-03 | 1982-02-03 | 光導電部材 |
| JP57018420A JPS58136042A (ja) | 1982-02-08 | 1982-02-08 | 電子写真用光導電部材 |
| JP57020239A JPS58137842A (ja) | 1982-02-09 | 1982-02-09 | 電子写真用光導電部材 |
| JP2099182A JPS58137845A (ja) | 1982-02-10 | 1982-02-10 | 電子写真用光導電部材 |
| JP57020990A JPS58137844A (ja) | 1982-02-10 | 1982-02-10 | 光導電部材 |
| JP57033504A JPH0623856B2 (ja) | 1982-03-02 | 1982-03-02 | 光導電部材 |
| JP57033294A JPS58150961A (ja) | 1982-03-03 | 1982-03-03 | 光導電部材 |
| JP3329182A JPS58150958A (ja) | 1982-03-03 | 1982-03-03 | 光導電部材 |
| JP57033292A JPS58150959A (ja) | 1982-03-03 | 1982-03-03 | 光導電部材 |
| JP57033293A JPS58150960A (ja) | 1982-03-03 | 1982-03-03 | 光導電部材 |
| JP57034209A JPS58150964A (ja) | 1982-03-04 | 1982-03-04 | 光導電部材 |
| JP57034207A JPS58150962A (ja) | 1982-03-04 | 1982-03-04 | 光導電部材 |
| JP57034208A JPH0623857B2 (ja) | 1982-03-04 | 1982-03-04 | 光導電部材 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3303266A1 DE3303266A1 (de) | 1983-08-11 |
| DE3303266C2 true DE3303266C2 (https=) | 1988-04-28 |
Family
ID=27585653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19833303266 Granted DE3303266A1 (de) | 1982-02-01 | 1983-02-01 | Fotoeleitfaehiges element |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4636450A (https=) |
| DE (1) | DE3303266A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3309240A1 (de) * | 1982-03-15 | 1983-09-22 | Canon K.K., Tokyo | Fotoleitfaehiges aufzeichnungselement |
| US4795688A (en) * | 1982-03-16 | 1989-01-03 | Canon Kabushiki Kaisha | Layered photoconductive member comprising amorphous silicon |
| JP2566924B2 (ja) * | 1986-07-14 | 1996-12-25 | キヤノン株式会社 | 光磁気記録装置 |
| US5366921A (en) * | 1987-11-13 | 1994-11-22 | Canon Kabushiki Kaisha | Process for fabricating an electronic circuit apparatus |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL132197C (https=) * | 1959-12-30 | |||
| US4317844A (en) * | 1975-07-28 | 1982-03-02 | Rca Corporation | Semiconductor device having a body of amorphous silicon and method of making the same |
| US4328258A (en) * | 1977-12-05 | 1982-05-04 | Plasma Physics Corp. | Method of forming semiconducting materials and barriers |
| AU530905B2 (en) * | 1977-12-22 | 1983-08-04 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
| US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
| US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
| JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
| FR2433871A1 (fr) * | 1978-08-18 | 1980-03-14 | Hitachi Ltd | Dispositif de formation d'image a semi-conducteur |
| US4251289A (en) * | 1979-12-28 | 1981-02-17 | Exxon Research & Engineering Co. | Gradient doping in amorphous silicon |
| US4253882A (en) * | 1980-02-15 | 1981-03-03 | University Of Delaware | Multiple gap photovoltaic device |
| JPS56156836A (en) * | 1980-05-08 | 1981-12-03 | Minolta Camera Co Ltd | Electrophotographic receptor |
| JPS574053A (en) * | 1980-06-09 | 1982-01-09 | Canon Inc | Photoconductive member |
| US4409308A (en) * | 1980-10-03 | 1983-10-11 | Canon Kabuskiki Kaisha | Photoconductive member with two amorphous silicon layers |
-
1983
- 1983-02-01 DE DE19833303266 patent/DE3303266A1/de active Granted
-
1986
- 1986-02-18 US US06/830,483 patent/US4636450A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE3303266A1 (de) | 1983-08-11 |
| US4636450A (en) | 1987-01-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |