DE3279006D1 - Electrophotographic photosensitive member - Google Patents

Electrophotographic photosensitive member

Info

Publication number
DE3279006D1
DE3279006D1 DE8282104724T DE3279006T DE3279006D1 DE 3279006 D1 DE3279006 D1 DE 3279006D1 DE 8282104724 T DE8282104724 T DE 8282104724T DE 3279006 T DE3279006 T DE 3279006T DE 3279006 D1 DE3279006 D1 DE 3279006D1
Authority
DE
Germany
Prior art keywords
photosensitive member
electrophotographic photosensitive
electrophotographic
photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282104724T
Other languages
English (en)
Inventor
Takeshi Matsuo
Yukio Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8074381A external-priority patent/JPS57196261A/ja
Priority claimed from JP8074581A external-priority patent/JPS57196262A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3279006D1 publication Critical patent/DE3279006D1/de
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214Silicon-based
    • G03G5/08221Silicon-based comprising one or two silicon based layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE8282104724T 1981-05-29 1982-05-28 Electrophotographic photosensitive member Expired DE3279006D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8074381A JPS57196261A (en) 1981-05-29 1981-05-29 Electrophotographic photoreceptor
JP8074581A JPS57196262A (en) 1981-05-29 1981-05-29 Electrophotographic photoreceptor

Publications (1)

Publication Number Publication Date
DE3279006D1 true DE3279006D1 (en) 1988-10-13

Family

ID=26421715

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282104724T Expired DE3279006D1 (en) 1981-05-29 1982-05-28 Electrophotographic photosensitive member

Country Status (3)

Country Link
US (1) US4560634A (de)
EP (1) EP0066812B1 (de)
DE (1) DE3279006D1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2163289B (en) * 1984-07-19 1988-06-22 Canon Kk Long size image sensor unit and photosensors for use in this sensor unit and a method of manufacturing the photosensors
US4749588A (en) * 1984-09-07 1988-06-07 Nobuhiro Fukuda Process for producing hydrogenated amorphous silicon thin film and a solar cell
JPH071395B2 (ja) * 1984-09-27 1995-01-11 株式会社東芝 電子写真感光体
NL8500039A (nl) * 1985-01-08 1986-08-01 Oce Nederland Bv Electrofotografische werkwijze voor het vormen van een zichtbaar beeld.
US4582773A (en) * 1985-05-02 1986-04-15 Energy Conversion Devices, Inc. Electrophotographic photoreceptor and method for the fabrication thereof
US4678731A (en) * 1985-06-25 1987-07-07 Kabushiki Kaisha Toshiba Electrophotographic photosensitive member having barrier layer comprising microcrystalline silicon containing hydrogen
US4717637A (en) * 1985-06-25 1988-01-05 Kabushiki Kaisha Toshiba Electrophotographic photosensitive member using microcrystalline silicon
US4713308A (en) * 1985-06-25 1987-12-15 Kabushiki Kaisha Toshiba Electrophotographic photosensitive member using microcrystalline silicon
US4704343A (en) * 1986-02-26 1987-11-03 Kabushiki Kaisha Toshiba Electrophotographic photosensitive member containing amorphous silicon and doped microcrystalline silicon layers
JPS62226157A (ja) * 1986-03-26 1987-10-05 Toshiba Corp 電子写真感光体
US4803141A (en) * 1986-08-11 1989-02-07 Kabushiki Kaisha Toshiba Electrophotographic superlattice photoreceptor
JPS6343157A (ja) * 1986-08-11 1988-02-24 Toshiba Corp 電子写真感光体
US4804605A (en) * 1986-08-11 1989-02-14 Kabushiki Kaisha Toshiba Electrophotographic superlattice photoreceptor
US4810605A (en) * 1986-10-31 1989-03-07 Kabushiki Kaisha Toshiba Electrophotographic superlattice photoreceptor
NL8700904A (nl) * 1987-04-16 1988-11-16 Philips Nv Halfgeleiderlaserinrichting en werkwijze voor het vervaardigen daarvan.
US5268208A (en) * 1991-07-01 1993-12-07 Ford Motor Company Plasma enhanced chemical vapor deposition of oxide film stack
US5425922A (en) * 1991-12-27 1995-06-20 Vicor Company Of Japan, Ltd. Apparatus for manufacturing microcrystal particles and manufacturing method for the microcrystal particles
JP5147510B2 (ja) * 2007-04-27 2013-02-20 キヤノン株式会社 電子写真用ローラ部材の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4004954A (en) * 1976-02-25 1977-01-25 Rca Corporation Method of selective growth of microcrystalline silicon
DE2746967C2 (de) * 1977-10-19 1981-09-24 Siemens AG, 1000 Berlin und 8000 München Elektrofotographische Aufzeichnungstrommel
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
US4253882A (en) * 1980-02-15 1981-03-03 University Of Delaware Multiple gap photovoltaic device
JPS56155945A (en) * 1980-04-14 1981-12-02 Toshiba Corp Electrophotographic receptor
JPS5744154A (en) * 1980-08-29 1982-03-12 Canon Inc Electrophotographic image formation member

Also Published As

Publication number Publication date
US4560634A (en) 1985-12-24
EP0066812A2 (de) 1982-12-15
EP0066812A3 (en) 1983-10-12
EP0066812B1 (de) 1988-09-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)