DE3272414D1 - Mos dynamic memory device - Google Patents

Mos dynamic memory device

Info

Publication number
DE3272414D1
DE3272414D1 DE8282301274T DE3272414T DE3272414D1 DE 3272414 D1 DE3272414 D1 DE 3272414D1 DE 8282301274 T DE8282301274 T DE 8282301274T DE 3272414 T DE3272414 T DE 3272414T DE 3272414 D1 DE3272414 D1 DE 3272414D1
Authority
DE
Germany
Prior art keywords
memory device
dynamic memory
mos dynamic
mos
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282301274T
Other languages
English (en)
Inventor
Yoshihiro Takemae
Tomio Nakano
Tsuyoshi Ohira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3272414D1 publication Critical patent/DE3272414D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE8282301274T 1981-03-13 1982-03-12 Mos dynamic memory device Expired DE3272414D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56036945A JPS57152589A (en) 1981-03-13 1981-03-13 Semiconductor memory

Publications (1)

Publication Number Publication Date
DE3272414D1 true DE3272414D1 (en) 1986-09-11

Family

ID=12483885

Family Applications (2)

Application Number Title Priority Date Filing Date
DE8282301274T Expired DE3272414D1 (en) 1981-03-13 1982-03-12 Mos dynamic memory device
DE8585104364T Expired - Lifetime DE3280261D1 (de) 1981-03-13 1982-03-12 Dynamische mos-speicheranordnung.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE8585104364T Expired - Lifetime DE3280261D1 (de) 1981-03-13 1982-03-12 Dynamische mos-speicheranordnung.

Country Status (5)

Country Link
US (1) US4532613A (de)
EP (2) EP0061271B1 (de)
JP (1) JPS57152589A (de)
DE (2) DE3272414D1 (de)
IE (1) IE53368B1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0194939B1 (de) * 1985-03-14 1992-02-05 Fujitsu Limited Halbleiterspeicheranordnung
US4979145A (en) * 1986-05-01 1990-12-18 Motorola, Inc. Structure and method for improving high speed data rate in a DRAM
ATE73957T1 (de) * 1987-06-10 1992-04-15 Siemens Ag Generatorschaltung.
US5646893A (en) * 1995-09-07 1997-07-08 Advanced Micro Devices, Inc. Segmented read line circuit particularly useful for multi-port storage arrays
KR100487481B1 (ko) * 1997-05-24 2005-07-29 삼성전자주식회사 데이터출력구동회로를갖는반도체메모리장치
KR100390898B1 (ko) * 1999-06-29 2003-07-10 주식회사 하이닉스반도체 데이타 출력 버퍼
JP4922635B2 (ja) * 2006-03-24 2012-04-25 三洋電機株式会社 ショーケース

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176289A (en) * 1978-06-23 1979-11-27 Electronic Memories & Magnetics Corporation Driving circuit for integrated circuit semiconductor memory
JPS5528542A (en) * 1978-08-21 1980-02-29 Hitachi Ltd Clock generation system
WO1980001972A1 (en) * 1979-03-13 1980-09-18 Ncr Co Write/restore/erase signal generator for volatile/non-volatile memory system
JPS5625290A (en) * 1979-08-07 1981-03-11 Nec Corp Semiconductor circuit

Also Published As

Publication number Publication date
EP0170781A2 (de) 1986-02-12
IE820593L (en) 1982-09-13
US4532613A (en) 1985-07-30
EP0170781B1 (de) 1990-10-17
JPS57152589A (en) 1982-09-20
JPH0157436B2 (de) 1989-12-05
EP0061271A1 (de) 1982-09-29
DE3280261D1 (de) 1990-11-22
EP0170781A3 (en) 1986-02-19
IE53368B1 (en) 1988-10-26
EP0061271B1 (de) 1986-08-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition