DE3270600D1 - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
DE3270600D1
DE3270600D1 DE8282303494T DE3270600T DE3270600D1 DE 3270600 D1 DE3270600 D1 DE 3270600D1 DE 8282303494 T DE8282303494 T DE 8282303494T DE 3270600 T DE3270600 T DE 3270600T DE 3270600 D1 DE3270600 D1 DE 3270600D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282303494T
Other languages
English (en)
Inventor
Naoki Chinone
Yasutoshi Kashiwada
Shigeo Yamashita
Kunio Aiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3270600D1 publication Critical patent/DE3270600D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8282303494T 1981-07-03 1982-07-02 Semiconductor laser device Expired DE3270600D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56103344A JPS586191A (ja) 1981-07-03 1981-07-03 半導体レ−ザ装置

Publications (1)

Publication Number Publication Date
DE3270600D1 true DE3270600D1 (en) 1986-05-22

Family

ID=14351516

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282303494T Expired DE3270600D1 (en) 1981-07-03 1982-07-02 Semiconductor laser device

Country Status (5)

Country Link
US (1) US4506366A (de)
EP (1) EP0069563B1 (de)
JP (1) JPS586191A (de)
CA (1) CA1184285A (de)
DE (1) DE3270600D1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58216486A (ja) * 1982-06-10 1983-12-16 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザおよびその製造方法
JPS59129486A (ja) * 1983-01-14 1984-07-25 Toshiba Corp 半導体レーザ装置の製造方法
US4831630A (en) * 1983-04-14 1989-05-16 Xerox Corporation Phased-locked window lasers
JPS60137086A (ja) * 1983-12-26 1985-07-20 Toshiba Corp 半導体レ−ザ装置及びその製造方法
JPS60154689A (ja) * 1984-01-25 1985-08-14 Hitachi Ltd 発光素子およびこれを用いた光通信装置
GB2154059B (en) * 1984-01-25 1987-10-28 Hitachi Ltd Light emitting chip and communication apparatus using the same
EP0157555B1 (de) * 1984-03-27 1990-10-03 Matsushita Electric Industrial Co., Ltd. Halbleiterlaser und Verfahren zu dessen Fabrikation
GB2164791A (en) * 1984-09-22 1986-03-26 Stc Plc Semiconductor lasers
JPS6225485A (ja) * 1985-07-25 1987-02-03 Mitsubishi Electric Corp 半導体レ−ザ装置
DE3604294A1 (de) * 1986-02-12 1987-08-13 Telefunken Electronic Gmbh Heterostruktur-halbleiterlaserdioden
DE3604293A1 (de) * 1986-02-12 1987-08-13 Telefunken Electronic Gmbh Heterostruktur-halbleiterlaserdiode
US4839307A (en) * 1986-05-14 1989-06-13 Omron Tateisi Electronics Co. Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement
JPS6348888A (ja) * 1986-08-19 1988-03-01 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS6395682A (ja) * 1986-10-09 1988-04-26 Mitsubishi Electric Corp 端面発光素子
EP0332723A1 (de) * 1988-03-15 1989-09-20 International Business Machines Corporation Hochenergie-Halbleiter-Diodenlaser
JP2767278B2 (ja) * 1989-04-10 1998-06-18 株式会社日本コンラックス 硬貨選別装置
FR2654523B1 (fr) * 1989-11-13 1992-02-28 France Etat Amplificateur optique non resonnant a diode laser.
US5255281A (en) * 1990-04-26 1993-10-19 Fujitsu Limited Semiconductor laser having double heterostructure
DE69113471T2 (de) * 1991-12-05 1996-05-02 Ibm Auf einer strukturierten Substratoberfläche aufgewachsene Halbleiter-Laserdiode.
US5394421A (en) * 1993-01-11 1995-02-28 Rohm Co., Ltd. Semiconductor laser device including a step electrode in a form of eaves
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
GB2371405B (en) * 2001-01-23 2003-10-15 Univ Glasgow Improvements in or relating to semiconductor lasers
US20050167410A1 (en) * 2001-08-21 2005-08-04 Orson Bourne Methods for creating optical structures in dielectrics using controlled energy deposition
US10971652B2 (en) 2017-01-26 2021-04-06 Epistar Corporation Semiconductor device comprising electron blocking layers
US11056434B2 (en) * 2017-01-26 2021-07-06 Epistar Corporation Semiconductor device having specified p-type dopant concentration profile
US10084282B1 (en) 2017-08-14 2018-09-25 The United States Of America As Represented By The Secretary Of The Air Force Fundamental mode operation in broad area quantum cascade lasers
US11031753B1 (en) 2017-11-13 2021-06-08 The Government Of The United States Of America As Represented By The Secretary Of The Air Force Extracting the fundamental mode in broad area quantum cascade lasers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5485688A (en) * 1977-12-20 1979-07-07 Nec Corp Manufacture for semiconductor laser
US4185256A (en) * 1978-01-13 1980-01-22 Xerox Corporation Mode control of heterojunction injection lasers and method of fabrication
NL184715C (nl) * 1978-09-20 1989-10-02 Hitachi Ltd Halfgeleiderlaserinrichting.

Also Published As

Publication number Publication date
EP0069563B1 (de) 1986-04-16
US4506366A (en) 1985-03-19
JPS586191A (ja) 1983-01-13
CA1184285A (en) 1985-03-19
EP0069563A1 (de) 1983-01-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee