DE3241766C2 - - Google Patents

Info

Publication number
DE3241766C2
DE3241766C2 DE19823241766 DE3241766A DE3241766C2 DE 3241766 C2 DE3241766 C2 DE 3241766C2 DE 19823241766 DE19823241766 DE 19823241766 DE 3241766 A DE3241766 A DE 3241766A DE 3241766 C2 DE3241766 C2 DE 3241766C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19823241766
Other languages
German (de)
Other versions
DE3241766A1 (de
Inventor
Chunghsin Reading Mass. Us Lee
Peter E. Acton Mass. Us Oettinger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thermo Fisher Scientific Inc
Original Assignee
Thermo Electron Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thermo Electron Corp filed Critical Thermo Electron Corp
Publication of DE3241766A1 publication Critical patent/DE3241766A1/de
Application granted granted Critical
Publication of DE3241766C2 publication Critical patent/DE3241766C2/de
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3426—Alkaline metal compounds, e.g. Na-K-Sb
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06333—Photo emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31779—Lithography by projection from patterned photocathode
DE19823241766 1981-11-30 1982-11-11 Durch laser angeregter photoelektronengenerator hoher stromdichte und herstellungsverfahren Granted DE3241766A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32596081A 1981-11-30 1981-11-30

Publications (2)

Publication Number Publication Date
DE3241766A1 DE3241766A1 (de) 1983-06-09
DE3241766C2 true DE3241766C2 (es) 1987-04-09

Family

ID=23270181

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823241766 Granted DE3241766A1 (de) 1981-11-30 1982-11-11 Durch laser angeregter photoelektronengenerator hoher stromdichte und herstellungsverfahren

Country Status (4)

Country Link
JP (2) JPS58108639A (es)
DE (1) DE3241766A1 (es)
FR (1) FR2517470B1 (es)
GB (2) GB2111299B (es)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10245052A1 (de) * 2002-09-26 2004-04-08 Leo Elektronenmikroskopie Gmbh Elektronenstrahlquelle und elektronenoptischer Apparat mit einer solchen

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037633A (ja) * 1983-08-09 1985-02-27 Hamamatsu Photonics Kk 光電子銃
US4606061A (en) * 1983-12-28 1986-08-12 Tokyo Shibaura Denki Kabushiki Kaisha Light controlled x-ray scanner
GB8422895D0 (en) * 1984-09-11 1984-10-17 Texas Instruments Ltd Electron beam apparatus
DE3584141D1 (de) * 1984-11-20 1991-10-24 Fujitsu Ltd Verfahren zum projizieren eines photoelektrischen bildes.
GB8506788D0 (en) * 1985-03-15 1985-04-17 Secr Defence Thermal electron source
JPS6347928A (ja) * 1986-08-18 1988-02-29 Fujitsu Ltd 光電子転写用マスク
US4963823A (en) * 1988-06-27 1990-10-16 Siemens Aktiengesellschaft Electron beam measuring instrument
EP0348611B1 (en) * 1988-07-01 1994-07-20 International Business Machines Corporation Fibre optic photocathode
GB2260666B (en) * 1991-09-20 1995-12-20 Sharp Kk Time division multiplexed diode lasers
US5684360A (en) * 1995-07-10 1997-11-04 Intevac, Inc. Electron sources utilizing negative electron affinity photocathodes with ultra-small emission areas
JPH0936025A (ja) * 1995-07-14 1997-02-07 Nec Corp 電子ビーム露光法及び装置
US6538256B1 (en) 2000-08-17 2003-03-25 Applied Materials, Inc. Electron beam lithography system using a photocathode with a pattern of apertures for creating a transmission resonance
CN100394654C (zh) * 2003-01-16 2008-06-11 松下电器产业株式会社 光电子放出板及使用该板的负粒子发生装置
US7187755B2 (en) * 2004-11-02 2007-03-06 General Electric Company Electron emitter assembly and method for generating electron beams
EP2917009A4 (en) * 2012-11-09 2016-08-17 I B B Rheologie Inc METHODS AND SYSTEMS USING A TEMPERATURE MEASUREMENT OF CONCRETE MIXTURE
JP6664223B2 (ja) * 2016-01-12 2020-03-13 株式会社荏原製作所 電子銃及びこれを備える検査装置
JP6867568B2 (ja) * 2016-11-07 2021-04-28 国立大学法人東京工業大学 ナノスケール光陰極電子源

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB812403A (en) * 1954-08-06 1959-04-22 Emi Ltd Improvements in or relating to the formation of evaporated layers
GB714054A (en) * 1950-03-17 1954-08-25 Emi Ltd Improvements relating to the manufacture of photo-electric devices
GB1005708A (en) * 1960-12-14 1965-09-29 Emi Ltd Improvements relating to photo electrically sensitive devices
CH391912A (de) * 1961-11-09 1965-05-15 Trueb Taeuber & Co Ag Verfahren zur Sichtbarmachung und Aufnahme von elektronenoptischen Bildern
FR1345063A (fr) * 1962-10-23 1963-12-06 Thomson Houston Comp Francaise Cathode photoélectrique
DE1464594A1 (de) * 1963-07-18 1968-12-19 Forschungslaboratorium Dr Ing Photokathode
GB1117759A (en) * 1964-12-16 1968-06-26 Matsushita Electric Ind Co Ltd Photoemissive device
US4097761A (en) * 1966-02-16 1978-06-27 Rca Corporation Image tube cathode
FR1556109A (es) * 1967-03-10 1969-01-31
FR1566316A (es) * 1968-01-31 1969-05-09
DE1963740A1 (de) * 1969-12-19 1971-07-08 Max Planck Gesellschaft Impuls-Elektronenquelle
FR2076604A5 (es) * 1970-01-21 1971-10-15 Commissariat Energie Atomique
US3821778A (en) * 1972-12-04 1974-06-28 Hughes Aircraft Co Infrared photocathode
JPS573182B2 (es) * 1973-08-08 1982-01-20
JPS5224385A (en) * 1975-08-20 1977-02-23 Sanki Eng Co Ltd Single filter press
US4039810A (en) * 1976-06-30 1977-08-02 International Business Machines Corporation Electron projection microfabrication system
DE2719799A1 (de) * 1977-04-28 1978-11-02 Siemens Ag Fotoelektronischer bildprojektor
JPS5469953A (en) * 1977-11-15 1979-06-05 Toshiba Corp Electron emission device
JPS54146952A (en) * 1978-05-10 1979-11-16 Hitachi Denshi Ltd Photoelectric surface
US4313072A (en) * 1979-10-10 1982-01-26 The United States Of America As Represented By The United States Department Of Energy Light modulated switches and radio frequency emitters

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10245052A1 (de) * 2002-09-26 2004-04-08 Leo Elektronenmikroskopie Gmbh Elektronenstrahlquelle und elektronenoptischer Apparat mit einer solchen

Also Published As

Publication number Publication date
FR2517470B1 (fr) 1989-01-20
GB2111299B (en) 1986-07-09
GB2157884A (en) 1985-10-30
JPS58108639A (ja) 1983-06-28
DE3241766A1 (de) 1983-06-09
GB8511180D0 (en) 1985-06-12
FR2517470A1 (fr) 1983-06-03
GB2157884B (en) 1986-07-23
JPH03176953A (ja) 1991-07-31
GB2111299A (en) 1983-06-29

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee