DE3228037C2 - - Google Patents
Info
- Publication number
- DE3228037C2 DE3228037C2 DE3228037A DE3228037A DE3228037C2 DE 3228037 C2 DE3228037 C2 DE 3228037C2 DE 3228037 A DE3228037 A DE 3228037A DE 3228037 A DE3228037 A DE 3228037A DE 3228037 C2 DE3228037 C2 DE 3228037C2
- Authority
- DE
- Germany
- Prior art keywords
- holder
- seed
- germ
- flange
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/289,410 US4440728A (en) | 1981-08-03 | 1981-08-03 | Apparatus for growing tubular crystalline bodies |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3228037A1 DE3228037A1 (de) | 1983-02-17 |
DE3228037C2 true DE3228037C2 (US08124317-20120228-C00026.png) | 1992-10-01 |
Family
ID=23111416
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19823228037 Granted DE3228037A1 (de) | 1981-08-03 | 1982-07-27 | Apparatur zum ziehen von kristallkoerpern aus der schmelze |
Country Status (10)
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4440728A (en) * | 1981-08-03 | 1984-04-03 | Mobil Solar Energy Corporation | Apparatus for growing tubular crystalline bodies |
US4711695A (en) * | 1983-05-19 | 1987-12-08 | Mobil Solar Energy Corporation | Apparatus for and method of making crystalline bodies |
US4647437A (en) * | 1983-05-19 | 1987-03-03 | Mobil Solar Energy Corporation | Apparatus for and method of making crystalline bodies |
US4661324A (en) * | 1985-02-15 | 1987-04-28 | Mobil Solar Energy Corporation | Apparatus for replenishing a melt |
US5004519A (en) * | 1986-12-12 | 1991-04-02 | Texas Instruments Incorporated | Radiation heat shield for silicon melt-in manufacturing of single crystal silicon |
US4937053A (en) * | 1987-03-27 | 1990-06-26 | Mobil Solar Energy Corporation | Crystal growing apparatus |
DE3890206T1 (de) * | 1987-03-27 | 1989-04-13 | Mobil Solar Energy Corp | Kristallziehapparatur |
EP0309540B1 (en) * | 1987-03-27 | 1993-10-06 | Mobil Solar Energy Corporation | An apparatus and process for edge-defined, film-fed crystal growth |
US4936947A (en) * | 1987-05-05 | 1990-06-26 | Mobil Solar Energy Corporation | System for controlling apparatus for growing tubular crystalline bodies |
USRE34375E (en) * | 1987-05-05 | 1993-09-14 | Mobil Solar Energy Corporation | System for controlling apparatus for growing tubular crystalline bodies |
US4968380A (en) * | 1989-05-24 | 1990-11-06 | Mobil Solar Energy Corporation | System for continuously replenishing melt |
US5558712A (en) * | 1994-11-04 | 1996-09-24 | Ase Americas, Inc. | Contoured inner after-heater shield for reducing stress in growing crystalline bodies |
US6139811A (en) * | 1999-03-25 | 2000-10-31 | Ase Americas, Inc. | EFG crystal growth apparatus |
US7108746B2 (en) * | 2001-05-18 | 2006-09-19 | Integrated Materials, Inc. | Silicon fixture with roughened surface supporting wafers in chemical vapor deposition |
US20020170487A1 (en) * | 2001-05-18 | 2002-11-21 | Raanan Zehavi | Pre-coated silicon fixtures used in a high temperature process |
US7465351B2 (en) * | 2004-06-18 | 2008-12-16 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
US7691199B2 (en) * | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
US7344594B2 (en) * | 2004-06-18 | 2008-03-18 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
JP2006308267A (ja) * | 2005-05-02 | 2006-11-09 | Iis Materials:Kk | るつぼ装置及びそれを用いた溶融材料の凝固方法 |
CN101877976B (zh) | 2007-11-30 | 2012-12-19 | 株式会社钟化 | 抗菌性人工毛发及人工毛发用抗菌性涂布剂 |
EP3604630B1 (en) * | 2017-03-30 | 2024-02-21 | KYOCERA Corporation | Tubular sapphire member, heat exchanger, semiconductor manufacturing device and method for manufacturing tubular sapphire member |
US10415149B2 (en) * | 2017-03-31 | 2019-09-17 | Silfex, Inc. | Growth of a shaped silicon ingot by feeding liquid onto a shaped ingot |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3591348A (en) * | 1968-01-24 | 1971-07-06 | Tyco Laboratories Inc | Method of growing crystalline materials |
DE1935372C3 (de) * | 1969-07-11 | 1980-06-19 | Tyco Laboratories Inc., Waltham, Mass. (V.St.A.) | Verfahren und Vorrichtung zum Ziehen eines kristallinen Körpers vorbestimmten Querschnitts aus einer Schmelze |
US3870477A (en) * | 1972-07-10 | 1975-03-11 | Tyco Laboratories Inc | Optical control of crystal growth |
US3961905A (en) * | 1974-02-25 | 1976-06-08 | Corning Glass Works | Crucible and heater assembly for crystal growth from a melt |
JPS5146583A (en) * | 1974-10-21 | 1976-04-21 | Tokyo Shibaura Electric Co | Kanjotanketsushono seizohoho |
US3953174A (en) * | 1975-03-17 | 1976-04-27 | Tyco Laboratories, Inc. | Apparatus for growing crystalline bodies from the melt |
JPS5252184A (en) * | 1975-10-24 | 1977-04-26 | Mitsubishi Electric Corp | Apparatus for producing single crystal |
US4036666A (en) * | 1975-12-05 | 1977-07-19 | Mobil Tyco Solar Energy Corporation | Manufacture of semiconductor ribbon |
US4230674A (en) | 1976-12-27 | 1980-10-28 | Mobil Tyco Solar Energy Corporation | Crucible-die assemblies for growing crystalline bodies of selected shapes |
US4158038A (en) | 1977-01-24 | 1979-06-12 | Mobil Tyco Solar Energy Corporation | Method and apparatus for reducing residual stresses in crystals |
JPS53119281A (en) * | 1977-03-28 | 1978-10-18 | Hitachi Ltd | Manufacturing apparatus for semiconductor crystal |
US4325917A (en) * | 1977-07-21 | 1982-04-20 | Pelts Boris B | Method and apparatus for producing sapphire tubes |
US4235848A (en) * | 1978-06-15 | 1980-11-25 | Apilat Vitaly Y | Apparatus for pulling single crystal from melt on a seed |
US4271129A (en) * | 1979-03-06 | 1981-06-02 | Rca Corporation | Heat radiation deflectors within an EFG crucible |
JPS5659693A (en) * | 1979-10-23 | 1981-05-23 | Ricoh Co Ltd | Beltlike crystal manufacturing apparatus |
US4415401A (en) * | 1980-03-10 | 1983-11-15 | Mobil Solar Energy Corporation | Control of atmosphere surrounding crystal growth zone |
US4348365A (en) * | 1981-03-09 | 1982-09-07 | Rca Corporation | Crystal seed holder assembly |
US4440728A (en) * | 1981-08-03 | 1984-04-03 | Mobil Solar Energy Corporation | Apparatus for growing tubular crystalline bodies |
-
1981
- 1981-08-03 US US06/289,410 patent/US4440728A/en not_active Expired - Lifetime
-
1982
- 1982-05-07 JP JP57076462A patent/JPS5826097A/ja active Granted
- 1982-07-21 AU AU86255/82A patent/AU549536B2/en not_active Ceased
- 1982-07-21 IN IN557/DEL/82A patent/IN158117B/en unknown
- 1982-07-22 GB GB08221168A patent/GB2103105B/en not_active Expired
- 1982-07-23 CA CA000407959A patent/CA1198035A/en not_active Expired
- 1982-07-27 DE DE19823228037 patent/DE3228037A1/de active Granted
- 1982-07-30 FR FR828213350A patent/FR2510616B1/fr not_active Expired - Lifetime
- 1982-07-30 NL NL8203059A patent/NL8203059A/nl not_active Application Discontinuation
- 1982-08-02 IL IL66441A patent/IL66441A0/xx not_active IP Right Cessation
-
1985
- 1985-11-22 AU AU50290/85A patent/AU573922B2/en not_active Ceased
-
1988
- 1988-05-25 FR FR8806948A patent/FR2634788B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2103105A (en) | 1983-02-16 |
FR2510616B1 (fr) | 1990-08-03 |
NL8203059A (nl) | 1983-03-01 |
US4440728A (en) | 1984-04-03 |
FR2634788B1 (fr) | 1994-01-28 |
IL66441A0 (en) | 1982-12-31 |
AU549536B2 (en) | 1986-01-30 |
AU5029085A (en) | 1986-05-08 |
IN158117B (US08124317-20120228-C00026.png) | 1986-09-06 |
DE3228037A1 (de) | 1983-02-17 |
GB2103105B (en) | 1985-03-27 |
FR2510616A1 (fr) | 1983-02-04 |
JPS5826097A (ja) | 1983-02-16 |
JPH0327513B2 (US08124317-20120228-C00026.png) | 1991-04-16 |
AU573922B2 (en) | 1988-06-23 |
AU8625582A (en) | 1983-02-10 |
CA1198035A (en) | 1985-12-17 |
FR2634788A1 (fr) | 1990-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3228037C2 (US08124317-20120228-C00026.png) | ||
DE2611056A1 (de) | Vorrichtung und verfahren zum ziehen von kristallkoerpern aus der schmelze | |
DE2142801C3 (de) | Vorrichtung zum Ziehen eines kristallinen Körpers aus einem Schmelzfilm | |
EP0290629A1 (de) | Anordnung zur züchtung profilierter monokristalle | |
DE1769481B2 (de) | Verfahren zum ziehen eines einkristallinen koerpers aus der schmelze eines kongruent und hochschmelzenden materials und vorrichtung zur durchfuehrung des verfahrens | |
DE2925679A1 (de) | Verfahren zur herstellung von siliciumstaeben | |
DE2752308A1 (de) | Vorrichtung zum zuechten von einkristallen aus einer schmelze bei zufuehrung von zerkleinertem chargenmaterial | |
DE2254616A1 (de) | Erzeugung von kristallkoerpern mit kompliziertem raeumlichen bau | |
DE2325104A1 (de) | Verfahren zum zuechten kristalliner koerper | |
DE3418370C2 (de) | Verfahren und Vorrichtung zum Ziehen von Kristallkörpern | |
DE3007877A1 (de) | Anordnung zum aufwachsen von kristallbaendern und verfahren zum betrieb der anordnung | |
DE2522611C2 (de) | Vorrichtung zum Ziehen von Einkristallen | |
DE2730161A1 (de) | Vorrichtung zum ziehen eines kristalls | |
DE2554354B2 (de) | Verfahren zum Ziehen eines Kristalls und Vorrichtung zum Durchführen dieses Verfahrens | |
DE2832150C2 (de) | Verfahren zum Ziehen von kristallinen Saphirrohren | |
DE3530231C2 (US08124317-20120228-C00026.png) | ||
DE2620030A1 (de) | Verfahren zum kristallziehen aus der schmelze | |
EP0170119B1 (de) | Verfahren und Vorrichtung zum Herstellen von bandförmigen Siliziumkristallen mit horizontaler Ziehrichtung | |
DE3132621A1 (de) | Verfahren und vorrichtung zum ziehen eines einkristall-bandes aus einer schmelze | |
DE3210833A1 (de) | Verfahren und vorrichtung zum ziehen eines bandfoermigen kristallkoerpers aus einer schmelze | |
DE2307463C3 (de) | Verfahren und Vorrichtung zum Herstellen von einkristallinen Metallgußstücken | |
DE3321201C2 (de) | Tiegel zum Kristallziehen | |
DE2604351A1 (de) | Verfahren zur herstellung von halbleiteranordnungen, bei dem eine halbleitermaterialschicht auf einem substrat angebracht wird, vorrichtung zum durchfuehren dieses verfahrens und durch dieses verfahren hergestellte halbleiteranordnungen | |
DE102009044893B4 (de) | Herstellungsverfahren zur Herstellung eines Kristallkörpers aus einem Halbleitermaterial | |
DE2223804C3 (de) | Einkristallines Rohr und Verfahren zur Herstellung desselben aus einer Schmelze |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8127 | New person/name/address of the applicant |
Owner name: MOBIL SOLAR ENERGY CORP., WALTHAM, MASS., US |
|
8110 | Request for examination paragraph 44 | ||
8172 | Supplementary division/partition in: |
Ref country code: DE Ref document number: 3250094 Format of ref document f/p: P |
|
Q171 | Divided out to: |
Ref country code: DE Ref document number: 3250094 |
|
AH | Division in |
Ref country code: DE Ref document number: 3250094 Format of ref document f/p: P |
|
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |