DE3219908A1 - Vorrichtung zum abscheiden von polykristallinem silizium - Google Patents
Vorrichtung zum abscheiden von polykristallinem siliziumInfo
- Publication number
- DE3219908A1 DE3219908A1 DE19823219908 DE3219908A DE3219908A1 DE 3219908 A1 DE3219908 A1 DE 3219908A1 DE 19823219908 DE19823219908 DE 19823219908 DE 3219908 A DE3219908 A DE 3219908A DE 3219908 A1 DE3219908 A1 DE 3219908A1
- Authority
- DE
- Germany
- Prior art keywords
- container
- polycrystalline silicon
- quartz
- jacket vessel
- quartz glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 9
- 238000000151 deposition Methods 0.000 title claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 2
- 238000011010 flushing procedure Methods 0.000 claims description 2
- 101100008646 Caenorhabditis elegans daf-3 gene Proteins 0.000 claims 1
- 239000005350 fused silica glass Substances 0.000 abstract description 8
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000010926 purge Methods 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19823219908 DE3219908A1 (de) | 1982-05-27 | 1982-05-27 | Vorrichtung zum abscheiden von polykristallinem silizium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19823219908 DE3219908A1 (de) | 1982-05-27 | 1982-05-27 | Vorrichtung zum abscheiden von polykristallinem silizium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3219908A1 true DE3219908A1 (de) | 1983-12-01 |
| DE3219908C2 DE3219908C2 (OSRAM) | 1988-05-19 |
Family
ID=6164603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823219908 Granted DE3219908A1 (de) | 1982-05-27 | 1982-05-27 | Vorrichtung zum abscheiden von polykristallinem silizium |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3219908A1 (OSRAM) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3208381A1 (de) * | 1982-03-09 | 1983-09-15 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Glocke aus quarzgut |
-
1982
- 1982-05-27 DE DE19823219908 patent/DE3219908A1/de active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3208381A1 (de) * | 1982-03-09 | 1983-09-15 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Glocke aus quarzgut |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3219908C2 (OSRAM) | 1988-05-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: HERAEUS QUARZGLAS GMBH, 6450 HANAU, DE |
|
| 8339 | Ceased/non-payment of the annual fee |