DE3217026C2 - - Google Patents
Info
- Publication number
- DE3217026C2 DE3217026C2 DE3217026A DE3217026A DE3217026C2 DE 3217026 C2 DE3217026 C2 DE 3217026C2 DE 3217026 A DE3217026 A DE 3217026A DE 3217026 A DE3217026 A DE 3217026A DE 3217026 C2 DE3217026 C2 DE 3217026C2
- Authority
- DE
- Germany
- Prior art keywords
- additive
- ion
- layer
- layers
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 62
- 239000004065 semiconductor Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims 10
- 230000000996 additive effect Effects 0.000 claims 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 150000002500 ions Chemical class 0.000 description 44
- 238000002347 injection Methods 0.000 description 34
- 239000007924 injection Substances 0.000 description 34
- 230000015572 biosynthetic process Effects 0.000 description 23
- 238000012360 testing method Methods 0.000 description 13
- 239000013078 crystal Substances 0.000 description 8
- 238000005470 impregnation Methods 0.000 description 6
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012421 spiking Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000003803 hair density Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53219—Aluminium alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6956181A JPS57183053A (en) | 1981-05-06 | 1981-05-06 | Semiconductor device |
| JP6956281A JPS57183054A (en) | 1981-05-06 | 1981-05-06 | Semiconductor device |
| JP6956381A JPS57183055A (en) | 1981-05-06 | 1981-05-06 | Semiconductor device |
| JP6956481A JPS57183056A (en) | 1981-05-06 | 1981-05-06 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3217026A1 DE3217026A1 (de) | 1982-12-30 |
| DE3217026C2 true DE3217026C2 (en, 2012) | 1988-05-19 |
Family
ID=27465146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823217026 Granted DE3217026A1 (de) | 1981-05-06 | 1982-05-06 | Halbleitervorrichtung |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4899206A (en, 2012) |
| DE (1) | DE3217026A1 (en, 2012) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4502207A (en) * | 1982-12-21 | 1985-03-05 | Toshiba Shibaura Denki Kabushiki Kaisha | Wiring material for semiconductor device and method for forming wiring pattern therewith |
| GB2165692B (en) * | 1984-08-25 | 1989-05-04 | Ricoh Kk | Manufacture of interconnection patterns |
| EP0613180A3 (en) * | 1985-05-13 | 1994-10-19 | Toshiba Kk | Semiconductor device comprising interconnection electrodes. |
| DE3783405T2 (de) * | 1986-08-19 | 1993-08-05 | Fujitsu Ltd | Halbleiteranordnung mit einer duennschicht-verdrahtung und verfahren zum herstellen derselben. |
| US5260604A (en) * | 1988-09-27 | 1993-11-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with improved immunity to contact and conductor defects |
| US5227314A (en) * | 1989-03-22 | 1993-07-13 | At&T Bell Laboratories | Method of making metal conductors having a mobile inn getterer therein |
| US5016081A (en) * | 1989-03-22 | 1991-05-14 | At&T Bell Laboratories | Mobile ion getterer for metal conductors |
| ES2103778T3 (es) * | 1990-05-31 | 1997-10-01 | Canon Kk | Metodo para la fabricacion de un dispositivo de memoria semiconductor, que tiene un condensador. |
| JPH10125619A (ja) * | 1996-10-09 | 1998-05-15 | Internatl Business Mach Corp <Ibm> | 配線層および配線層の形成方法 |
| US5801100A (en) * | 1997-03-07 | 1998-09-01 | Industrial Technology Research Institute | Electroless copper plating method for forming integrated circuit structures |
| JPH10270446A (ja) * | 1997-03-24 | 1998-10-09 | Internatl Business Mach Corp <Ibm> | 多層配線層および金属配線層の形成方法 |
| US6657376B1 (en) | 1999-06-01 | 2003-12-02 | Micron Technology, Inc. | Electron emission devices and field emission display devices having buffer layer of microcrystalline silicon |
| US6650043B1 (en) * | 1999-07-20 | 2003-11-18 | Micron Technology, Inc. | Multilayer conductor structure for use in field emission display |
| US7052350B1 (en) * | 1999-08-26 | 2006-05-30 | Micron Technology, Inc. | Field emission device having insulated column lines and method manufacture |
| US7409494B2 (en) * | 2004-04-30 | 2008-08-05 | Network Appliance, Inc. | Extension of write anywhere file system layout |
| US20050274480A1 (en) * | 2004-05-24 | 2005-12-15 | Barsoum Michel W | Reduction of spontaneous metal whisker formation |
| US7157381B2 (en) * | 2004-06-15 | 2007-01-02 | Infineon Technologies Ag | Method for providing whisker-free aluminum metal lines or aluminum alloy lines in integrated circuits |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3631305A (en) * | 1970-12-17 | 1971-12-28 | Cogar Corp | Improved semiconductor device and electrical conductor |
| US3827949A (en) * | 1972-03-29 | 1974-08-06 | Ibm | Anodic oxide passivated planar aluminum metallurgy system and method of producing |
| US3743894A (en) * | 1972-06-01 | 1973-07-03 | Motorola Inc | Electromigration resistant semiconductor contacts and the method of producing same |
| US3887994A (en) * | 1973-06-29 | 1975-06-10 | Ibm | Method of manufacturing a semiconductor device |
| US3879804A (en) * | 1974-10-07 | 1975-04-29 | Lawrence Products Inc L | Neck strap |
| US4242698A (en) * | 1977-11-02 | 1980-12-30 | Texas Instruments Incorporated | Maximum density interconnections for large scale integrated circuits |
| US4330343A (en) * | 1979-01-04 | 1982-05-18 | The United States Of America As Represented By The Secretary Of The Navy | Refractory passivated ion-implanted GaAs ohmic contacts |
-
1982
- 1982-05-06 DE DE19823217026 patent/DE3217026A1/de active Granted
-
1985
- 1985-04-01 US US06/717,597 patent/US4899206A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US4899206A (en) | 1990-02-06 |
| DE3217026A1 (de) | 1982-12-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8101 | Request for examination as to novelty | ||
| 8105 | Search report available | ||
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8339 | Ceased/non-payment of the annual fee |