DE3174971D1 - Read-only memory device - Google Patents

Read-only memory device

Info

Publication number
DE3174971D1
DE3174971D1 DE8181302007T DE3174971T DE3174971D1 DE 3174971 D1 DE3174971 D1 DE 3174971D1 DE 8181302007 T DE8181302007 T DE 8181302007T DE 3174971 T DE3174971 T DE 3174971T DE 3174971 D1 DE3174971 D1 DE 3174971D1
Authority
DE
Germany
Prior art keywords
read
memory device
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181302007T
Other languages
English (en)
Inventor
Tsuyoshi Sunny Minami Yamamoto
Hitoshi Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3174971D1 publication Critical patent/DE3174971D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
DE8181302007T 1980-05-08 1981-05-07 Read-only memory device Expired DE3174971D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6103080A JPS56156993A (en) 1980-05-08 1980-05-08 Read only memory

Publications (1)

Publication Number Publication Date
DE3174971D1 true DE3174971D1 (en) 1986-08-28

Family

ID=13159481

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181302007T Expired DE3174971D1 (en) 1980-05-08 1981-05-07 Read-only memory device

Country Status (5)

Country Link
US (1) US4426686A (de)
EP (1) EP0040045B1 (de)
JP (1) JPS56156993A (de)
DE (1) DE3174971D1 (de)
IE (1) IE51807B1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2583203B1 (fr) * 1985-06-11 1991-06-21 Efcis Memoire morte a capacite de ligne optimisee et procede d'encodage d'une telle memoire
US4821239A (en) * 1987-08-25 1989-04-11 National Semiconductor Corp. Programmable sense amplifier for read only memory
JPH0715952B2 (ja) * 1988-04-13 1995-02-22 株式会社東芝 半導体記憶装置
NL8902820A (nl) * 1989-11-15 1991-06-03 Philips Nv Geintegreerde halfgeleiderschakeling van het master slice type.
KR930000815B1 (ko) * 1990-02-20 1993-02-05 삼성전자 주식회사 Rom 회로
US5046045A (en) * 1990-03-16 1991-09-03 Chipware, Inc. Method of storing data in a read only memory to enhance access time
KR940004609B1 (ko) * 1991-09-04 1994-05-25 삼성전자 주식회사 마스크 리드 온리 메모리
FR2695752B1 (fr) * 1992-09-16 1994-11-10 Matra Mhs Mémoire de programme à semi-conducteur protégée en lecture.
JPH06196746A (ja) * 1992-12-25 1994-07-15 Canon Inc 光電変換装置、駆動回路、半導体発光素子駆動回路、記憶装置、及びシーケンシャルアクセスメモリー
US5940332A (en) * 1997-11-13 1999-08-17 Stmicroelectronics, Inc. Programmed memory with improved speed and power consumption
FR2793591B1 (fr) 1999-05-12 2004-01-02 St Microelectronics Sa Memoire morte a consommation statique reduite
US6618282B1 (en) 2002-08-07 2003-09-09 National Semiconductor Corporation High density ROM architecture with inversion of programming
US6642587B1 (en) 2002-08-07 2003-11-04 National Semiconductor Corporation High density ROM architecture
GB0414622D0 (en) * 2004-06-30 2004-08-04 Ibm Data integrity checking in data storage devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2036517B2 (de) * 1970-07-23 1972-10-19 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum betrieb eines schadhafte speicherelemente enthaltenden speichers fuer programmgesteuerte elektronische datenverarbeitungsanlagen
US4192014A (en) * 1978-11-20 1980-03-04 Ncr Corporation ROM memory cell with 2n FET channel widths

Also Published As

Publication number Publication date
EP0040045A1 (de) 1981-11-18
EP0040045B1 (de) 1986-07-23
IE51807B1 (en) 1987-04-01
JPS56156993A (en) 1981-12-03
US4426686A (en) 1984-01-17
IE811009L (en) 1981-11-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee