DE3174122D1 - A static type random access memory - Google Patents

A static type random access memory

Info

Publication number
DE3174122D1
DE3174122D1 DE8181301981T DE3174122T DE3174122D1 DE 3174122 D1 DE3174122 D1 DE 3174122D1 DE 8181301981 T DE8181301981 T DE 8181301981T DE 3174122 T DE3174122 T DE 3174122T DE 3174122 D1 DE3174122 D1 DE 3174122D1
Authority
DE
Germany
Prior art keywords
random access
access memory
type random
static type
static
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181301981T
Other languages
English (en)
Inventor
Setsuo Kurafuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3174122D1 publication Critical patent/DE3174122D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
DE8181301981T 1980-05-22 1981-05-06 A static type random access memory Expired DE3174122D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55068270A JPS592997B2 (ja) 1980-05-22 1980-05-22 スタテイツクメモリ

Publications (1)

Publication Number Publication Date
DE3174122D1 true DE3174122D1 (en) 1986-04-24

Family

ID=13368887

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181301981T Expired DE3174122D1 (en) 1980-05-22 1981-05-06 A static type random access memory

Country Status (5)

Country Link
US (1) US4499559A (de)
EP (1) EP0040917B1 (de)
JP (1) JPS592997B2 (de)
DE (1) DE3174122D1 (de)
IE (1) IE51610B1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5963091A (ja) * 1982-09-30 1984-04-10 Fujitsu Ltd スタテイツクメモリ回路
JPS6043295A (ja) * 1983-08-17 1985-03-07 Mitsubishi Electric Corp 半導体記憶装置
US4791613A (en) * 1983-09-21 1988-12-13 Inmos Corporation Bit line and column circuitry used in a semiconductor memory
JPH0770222B2 (ja) * 1984-06-04 1995-07-31 株式会社日立製作所 Ｍｏｓスタテイツク型ｒａｍ
JPS61139993A (ja) * 1984-12-12 1986-06-27 Hitachi Micro Comput Eng Ltd スタテイツク型ｒａｍ
US4639898A (en) * 1984-12-21 1987-01-27 Rca Corporation Bit-line pull-up circuit
US4730279A (en) * 1985-03-30 1988-03-08 Kabushiki Kaisha Toshiba Static semiconductor memory device
US4825409A (en) * 1985-05-13 1989-04-25 Wang Laboratories, Inc. NMOS data storage cell for clocked shift register applications
GB2176357B (en) * 1985-06-12 1989-07-12 Stc Plc Improvements in semiconductor memories
JPS6267790A (ja) * 1985-09-20 1987-03-27 Hitachi Vlsi Eng Corp スタテイツク型ｒａｍ
US4764899A (en) * 1986-02-07 1988-08-16 Advanced Micro Devices, Inc. Writing speed in multi-port static rams
NL8602450A (nl) * 1986-09-29 1988-04-18 Philips Nv Geintegreerde geheugenschakeling met een enkelvoudige-schrijfbus circuit.
JPS6446288A (en) * 1987-08-13 1989-02-20 Toshiba Corp Semiconductor memory device
JP2654548B2 (ja) * 1987-10-02 1997-09-17 株式会社日立製作所 半導体記憶装置
EP0320556B1 (de) * 1987-12-15 1991-02-27 International Business Machines Corporation Referenz-Spannungsgenerator für CMOS-Speicher
US5046052A (en) * 1988-06-01 1991-09-03 Sony Corporation Internal low voltage transformation circuit of static random access memory
US4975877A (en) * 1988-10-20 1990-12-04 Logic Devices Incorporated Static semiconductor memory with improved write recovery and column address circuitry
CA1309142C (en) * 1988-12-02 1992-10-20 Daniel K. Nichols Two-way radio with voice storage
KR920010345B1 (ko) * 1990-06-30 1992-11-27 삼성전자 주식회사 선충전수단을 구비한 라이트 드라이버(write driver)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967252A (en) * 1974-10-03 1976-06-29 Mostek Corporation Sense AMP for random access memory
US4131951A (en) * 1976-05-17 1978-12-26 Tokyo Shibaura Electric Co., Ltd. High speed complementary MOS memory
JPS53117341A (en) * 1977-03-24 1978-10-13 Toshiba Corp Semiconductor memory
US4123799A (en) * 1977-09-19 1978-10-31 Motorola, Inc. High speed IFGET sense amplifier/latch
JPS5826113B2 (ja) * 1978-05-18 1983-05-31 セイコーエプソン株式会社 Ｍｏｓランダムアクセスメモリ
JPS5951072B2 (ja) * 1979-02-26 1984-12-12 日本電気株式会社 半導体メモリ装置

Also Published As

Publication number Publication date
IE811008L (en) 1981-11-22
US4499559A (en) 1985-02-12
JPS592997B2 (ja) 1984-01-21
EP0040917B1 (de) 1986-03-19
EP0040917A1 (de) 1981-12-02
IE51610B1 (en) 1987-01-21
JPS56165982A (en) 1981-12-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition