DE3173512D1 - Patterning process and process for production of electronic devices utilizing said patterning process - Google Patents

Patterning process and process for production of electronic devices utilizing said patterning process

Info

Publication number
DE3173512D1
DE3173512D1 DE8181304436T DE3173512T DE3173512D1 DE 3173512 D1 DE3173512 D1 DE 3173512D1 DE 8181304436 T DE8181304436 T DE 8181304436T DE 3173512 T DE3173512 T DE 3173512T DE 3173512 D1 DE3173512 D1 DE 3173512D1
Authority
DE
Germany
Prior art keywords
patterning process
production
electronic devices
devices utilizing
patterning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181304436T
Other languages
English (en)
Inventor
Toshisuke Kitakohji
Shiro Takeda
Minoru Nakajima
Hiroshi Tokunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3173512D1 publication Critical patent/DE3173512D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02137—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02351—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
DE8181304436T 1980-09-27 1981-09-25 Patterning process and process for production of electronic devices utilizing said patterning process Expired DE3173512D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55134542A JPS5760330A (en) 1980-09-27 1980-09-27 Resin composition

Publications (1)

Publication Number Publication Date
DE3173512D1 true DE3173512D1 (en) 1986-02-27

Family

ID=15130746

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181304436T Expired DE3173512D1 (en) 1980-09-27 1981-09-25 Patterning process and process for production of electronic devices utilizing said patterning process

Country Status (4)

Country Link
US (1) US4600685A (de)
EP (1) EP0049127B1 (de)
JP (1) JPS5760330A (de)
DE (1) DE3173512D1 (de)

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JPS62502071A (ja) * 1985-03-07 1987-08-13 ヒュ−ズ・エアクラフト・カンパニ− イオンビ−ムと電子ビ−ムリソグラフイのためのポリシロキサンレジスト
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US4663414A (en) * 1985-05-14 1987-05-05 Stauffer Chemical Company Phospho-boro-silanol interlayer dielectric films and preparation
JP2607870B2 (ja) * 1985-07-26 1997-05-07 富士写真フイルム株式会社 画像形成方法
DE3760030D1 (en) * 1986-02-07 1989-02-02 Nippon Telegraph & Telephone Photosensitive and high energy beam sensitive resin composition containing substituted polysiloxane
US4855199A (en) * 1987-04-03 1989-08-08 General Electric Company Photopatterned product of silicone polyamic acid on a transparent substrate
US4782009A (en) * 1987-04-03 1988-11-01 General Electric Company Method of coating and imaging photopatternable silicone polyamic acid
US4765866A (en) * 1987-07-02 1988-08-23 Akzo America Inc. Energy ray curing of arylsiloxane/silicate compositions and subsequent etching thereof
US4758620A (en) * 1987-07-02 1988-07-19 Akzo America Inc. Blend of solvent and arylsiloxane interlayer dielectric materials
US4801507A (en) * 1987-07-02 1989-01-31 Akzo American Inc. Arylsiloxane/silicate compositions useful as interlayer dielectric films
US5057396A (en) * 1988-09-22 1991-10-15 Tosoh Corporation Photosensitive material having a silicon-containing polymer
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US5106658A (en) * 1989-04-24 1992-04-21 Akzo Nv Hardness improvement of film containing arylsiloxane and organosilicate
US5089303A (en) * 1989-04-24 1992-02-18 Akzo America Inc. Blend of solvent and photocurable arylsiloxane materials
US5098816A (en) * 1989-10-10 1992-03-24 International Business Machines Corporation Method for forming a pattern of a photoresist
US5110711A (en) * 1989-10-10 1992-05-05 International Business Machines Corporation Method for forming a pattern
US5059512A (en) * 1989-10-10 1991-10-22 International Business Machines Corporation Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions
US5024969A (en) * 1990-02-23 1991-06-18 Reche John J Hybrid circuit structure fabrication methods using high energy electron beam curing
DE69131658T2 (de) * 1990-06-25 2000-04-27 Matsushita Electronics Corp Licht- oder strahlungsempfindliche Zusammensetzung
JPH04233732A (ja) * 1990-08-16 1992-08-21 Motorola Inc 半導体の製造工程で使用するスピン・オン誘電体
US5093225A (en) * 1990-09-14 1992-03-03 Gte Laboratories Incorporated Processing method for fabricating electrical contacts to mesa structures in semiconductor devices
US5312684A (en) * 1991-05-02 1994-05-17 Dow Corning Corporation Threshold switching device
JPH05197304A (ja) * 1992-01-20 1993-08-06 Hitachi Ltd 溶着部材
JP2934353B2 (ja) * 1992-06-24 1999-08-16 三菱電機株式会社 半導体装置およびその製造方法
US5397741A (en) * 1993-03-29 1995-03-14 International Business Machines Corporation Process for metallized vias in polyimide
TW434458B (en) * 1995-04-04 2001-05-16 Shinetsu Chemical Co Chemically amplified positive resist compositions
MY113904A (en) * 1995-05-08 2002-06-29 Electron Vision Corp Method for curing spin-on-glass film utilizing electron beam radiation
US6607991B1 (en) 1995-05-08 2003-08-19 Electron Vision Corporation Method for curing spin-on dielectric films utilizing electron beam radiation
JP2697680B2 (ja) * 1995-05-31 1998-01-14 日本電気株式会社 珪素含有高分子化合物および感光性樹脂組成物
US6157079A (en) * 1997-11-10 2000-12-05 Citizen Watch Co., Ltd Semiconductor device with a bump including a bump electrode film covering a projecting photoresist
JP3543669B2 (ja) * 1999-03-31 2004-07-14 信越化学工業株式会社 絶縁膜形成用塗布液及び絶縁膜の形成方法
JP2003502449A (ja) * 1999-06-10 2003-01-21 ハネウエル・インターナシヨナル・インコーポレーテツド フォトリソグラフィ用スピンオンガラス反射防止コーティング
KR20000063142A (ko) * 2000-02-17 2000-11-06 이응찬 폴리오르가노실세스키옥산 제조용 출발물질,폴리오르가노실세스키옥산 및 폴리오르가노실세스키옥산제조방법
US6368400B1 (en) * 2000-07-17 2002-04-09 Honeywell International Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
US6653045B2 (en) * 2001-02-16 2003-11-25 International Business Machines Corporation Radiation sensitive silicon-containing negative resists and use thereof
AU2003216067A1 (en) * 2002-01-17 2003-09-02 Silecs Oy Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US7659050B2 (en) * 2005-06-07 2010-02-09 International Business Machines Corporation High resolution silicon-containing resist
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US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
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Also Published As

Publication number Publication date
US4600685A (en) 1986-07-15
JPS5760330A (en) 1982-04-12
EP0049127A1 (de) 1982-04-07
JPS6360374B2 (de) 1988-11-24
EP0049127B1 (de) 1986-01-15

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee