DE3173312D1 - Electron beam exposure system - Google Patents

Electron beam exposure system

Info

Publication number
DE3173312D1
DE3173312D1 DE8181107166T DE3173312T DE3173312D1 DE 3173312 D1 DE3173312 D1 DE 3173312D1 DE 8181107166 T DE8181107166 T DE 8181107166T DE 3173312 T DE3173312 T DE 3173312T DE 3173312 D1 DE3173312 D1 DE 3173312D1
Authority
DE
Germany
Prior art keywords
electron beam
beam exposure
exposure system
electron
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181107166T
Other languages
English (en)
Inventor
Ryoichi Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3173312D1 publication Critical patent/DE3173312D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
DE8181107166T 1980-09-17 1981-09-10 Electron beam exposure system Expired DE3173312D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55128843A JPS5753938A (en) 1980-09-17 1980-09-17 Electron beam exposure apparatus

Publications (1)

Publication Number Publication Date
DE3173312D1 true DE3173312D1 (en) 1986-02-06

Family

ID=14994752

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181107166T Expired DE3173312D1 (en) 1980-09-17 1981-09-10 Electron beam exposure system

Country Status (5)

Country Link
US (1) US4410800A (de)
EP (1) EP0047989B1 (de)
JP (1) JPS5753938A (de)
DD (1) DD201954A5 (de)
DE (1) DE3173312D1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4477729A (en) * 1982-10-01 1984-10-16 International Business Machines Corporation Continuously writing electron beam stitched pattern exposure system
JPS5993446A (ja) * 1982-11-18 1984-05-29 Konishiroku Photo Ind Co Ltd 写真用支持体
JPS60119721A (ja) * 1983-12-02 1985-06-27 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置における照射位置補正方法
JPS617626A (ja) * 1984-06-22 1986-01-14 Toshiba Corp 荷電ビ−ム描画方法
JPH0630237B2 (ja) * 1984-09-10 1994-04-20 株式会社日立製作所 イオン打込み装置
US4843563A (en) * 1985-03-25 1989-06-27 Canon Kabushiki Kaisha Step-and-repeat alignment and exposure method and apparatus
JP2614884B2 (ja) * 1988-02-04 1997-05-28 富士通株式会社 電子ビーム露光方法及びその装置
JP3334999B2 (ja) * 1994-03-30 2002-10-15 富士通株式会社 荷電粒子ビーム露光方法及び装置
EP0732624B1 (de) * 1995-03-17 2001-10-10 Ebara Corporation Herstellungsverfahren mit einem Energiebündel
JPH09270375A (ja) * 1996-03-29 1997-10-14 Advantest Corp 電子ビーム露光装置
US7663124B2 (en) * 2004-12-28 2010-02-16 Pioneer Corporation Beam recording method and device
US9171695B2 (en) * 2012-06-26 2015-10-27 Hitachi High-Technologies Corporation Stage apparatus and sample observation apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3900737A (en) * 1974-04-18 1975-08-19 Bell Telephone Labor Inc Electron beam exposure system
US4063103A (en) * 1975-04-11 1977-12-13 Tokyo Shibaura Electric Co., Ltd. Electron beam exposure apparatus
JPS5283177A (en) * 1975-12-31 1977-07-11 Fujitsu Ltd Electron beam exposure device
US4147937A (en) * 1977-11-01 1979-04-03 Fujitsu Limited Electron beam exposure system method and apparatus
JPS54117685A (en) * 1978-03-03 1979-09-12 Toshiba Corp Electron beam exposure unit
JPS5515219A (en) * 1978-07-18 1980-02-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Electronic beam exposure device
JPS5539692A (en) * 1978-09-14 1980-03-19 Sanyo Electric Co Ltd Scanning method of electron beam
JPS5572032A (en) * 1978-11-27 1980-05-30 Toshiba Corp Electron beam exposure device

Also Published As

Publication number Publication date
EP0047989A3 (en) 1982-06-23
US4410800A (en) 1983-10-18
JPS631743B2 (de) 1988-01-13
EP0047989B1 (de) 1985-12-27
DD201954A5 (de) 1983-08-17
EP0047989A2 (de) 1982-03-24
JPS5753938A (en) 1982-03-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee