DE3172935D1 - Iii - v group compound semiconductor light-emitting element and method of producing the same - Google Patents

Iii - v group compound semiconductor light-emitting element and method of producing the same

Info

Publication number
DE3172935D1
DE3172935D1 DE8181100621T DE3172935T DE3172935D1 DE 3172935 D1 DE3172935 D1 DE 3172935D1 DE 8181100621 T DE8181100621 T DE 8181100621T DE 3172935 T DE3172935 T DE 3172935T DE 3172935 D1 DE3172935 D1 DE 3172935D1
Authority
DE
Germany
Prior art keywords
iii
producing
emitting element
same
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181100621T
Other languages
English (en)
Inventor
Yasuhisa Oana
Nobuaki Yasuda
Masato Yamashita
Norio Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2338680A external-priority patent/JPS56120174A/ja
Priority claimed from JP2338780A external-priority patent/JPS56120175A/ja
Priority claimed from JP2339180A external-priority patent/JPS56120176A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3172935D1 publication Critical patent/DE3172935D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
DE8181100621T 1980-02-28 1981-01-28 Iii - v group compound semiconductor light-emitting element and method of producing the same Expired DE3172935D1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2338680A JPS56120174A (en) 1980-02-28 1980-02-28 Semiconductor luminous element of 3-5 group compound and its preparing method
JP2338780A JPS56120175A (en) 1980-02-28 1980-02-28 Semiconductor luminous element of 3-5 group compound and its preparing method
JP2339180A JPS56120176A (en) 1980-02-28 1980-02-28 Semiconductor luminous element of 3-5 group compound and its preparing method

Publications (1)

Publication Number Publication Date
DE3172935D1 true DE3172935D1 (en) 1986-01-02

Family

ID=27284239

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181100621T Expired DE3172935D1 (en) 1980-02-28 1981-01-28 Iii - v group compound semiconductor light-emitting element and method of producing the same

Country Status (3)

Country Link
US (1) US4447825A (de)
EP (1) EP0035118B1 (de)
DE (1) DE3172935D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL186354C (nl) * 1981-01-13 1990-11-01 Sharp Kk Halfgeleiderinrichting die uit iii-v verbindingen bestaat, met een samengestelde elektrode.
US4772935A (en) * 1984-12-19 1988-09-20 Fairchild Semiconductor Corporation Die bonding process
US5019461A (en) * 1986-12-08 1991-05-28 Honeywell Inc. Resistive overlayer for thin film devices
US5047832A (en) * 1989-03-10 1991-09-10 Sumitomo Electric Industries, Ltd. Electrode structure for III-V compound semiconductor element and method of manufacturing the same
US4997792A (en) * 1989-11-21 1991-03-05 Eastman Kodak Company Method for separation of diode array chips during fabrication thereof
US5052301A (en) * 1990-07-30 1991-10-01 Walker Richard E Electric initiator for blasting caps
DE4129647B4 (de) * 1990-09-28 2009-02-12 Siemens Ag Vorderseiten-Metallisierung zum Drahtbonden für ein III-V Halbleiterbauelement und Verfahren
DE59308636D1 (de) * 1992-08-28 1998-07-09 Siemens Ag Leuchtdiode
DE19537545A1 (de) 1995-10-09 1997-04-10 Telefunken Microelectron Verfahren zur Herstellung einer Lumineszenzdiode
DE19537544A1 (de) * 1995-10-09 1997-04-10 Telefunken Microelectron Lumineszenzdiode mit verbesserter Lichtausbeute
DE19632627A1 (de) * 1996-08-13 1998-02-19 Siemens Ag Verfahren zum Herstellen eines Licht aussendenden und/oder empfangenden Halbleiterkörpers
US6337151B1 (en) 1999-08-18 2002-01-08 International Business Machines Corporation Graded composition diffusion barriers for chip wiring applications
US8101965B2 (en) * 2008-12-02 2012-01-24 Epivalley Co., Ltd. III-nitride semiconductor light emitting device having a multilayered pad

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US896705A (en) * 1905-09-12 1908-08-25 Siemens Ag Process for hardening tantalum.
US1023315A (en) * 1906-07-02 1912-04-16 Gen Electric Metal filament.
US3379520A (en) * 1967-03-23 1968-04-23 Gen Electric Tantalum-base alloys
US3675090A (en) * 1968-11-04 1972-07-04 Energy Conversion Devices Inc Film deposited semiconductor devices
US3701931A (en) * 1971-05-06 1972-10-31 Ibm Gold tantalum-nitrogen high conductivity metallurgy
DE2315612A1 (de) * 1973-03-29 1974-10-03 Licentia Gmbh Verfahren zur herstellung eines streifenkontaktes bei einem halbleiterinjektionslaser
DE2323971C2 (de) * 1973-05-11 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Bauelement mit Lumineszenzdiode
US3894919A (en) * 1974-05-09 1975-07-15 Bell Telephone Labor Inc Contacting semiconductors during electrolytic oxidation
JPS53110460A (en) * 1977-03-09 1978-09-27 Toshiba Corp Electrode of compound semiconductor
JPS546787A (en) * 1977-06-17 1979-01-19 Matsushita Electric Ind Co Ltd Luminous element
FR2394894A1 (fr) * 1977-06-17 1979-01-12 Thomson Csf Dispositif de prise de contact sur un element semiconducteur
JPS6034827B2 (ja) * 1977-06-28 1985-08-10 株式会社東芝 リン化ガリウム発光素子
US4179533A (en) * 1978-04-25 1979-12-18 The United States Of America As Represented By The Secretary Of The Navy Multi-refractory films for gallium arsenide devices

Also Published As

Publication number Publication date
EP0035118A2 (de) 1981-09-09
EP0035118A3 (en) 1983-06-22
EP0035118B1 (de) 1985-11-21
US4447825A (en) 1984-05-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee