DE3170209D1 - Method of manufacturing a semiconductor device having improved alignment marks and alignment marks for said method - Google Patents
Method of manufacturing a semiconductor device having improved alignment marks and alignment marks for said methodInfo
- Publication number
- DE3170209D1 DE3170209D1 DE8181110535T DE3170209T DE3170209D1 DE 3170209 D1 DE3170209 D1 DE 3170209D1 DE 8181110535 T DE8181110535 T DE 8181110535T DE 3170209 T DE3170209 T DE 3170209T DE 3170209 D1 DE3170209 D1 DE 3170209D1
- Authority
- DE
- Germany
- Prior art keywords
- alignment marks
- manufacturing
- semiconductor device
- improved
- improved alignment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
-
- H10P95/00—
-
- H10W46/00—
-
- H10W46/101—
-
- H10W46/501—
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55187308A JPS57112021A (en) | 1980-12-29 | 1980-12-29 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3170209D1 true DE3170209D1 (en) | 1985-05-30 |
Family
ID=16203722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8181110535T Expired DE3170209D1 (en) | 1980-12-29 | 1981-12-17 | Method of manufacturing a semiconductor device having improved alignment marks and alignment marks for said method |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4423127A (enExample) |
| EP (1) | EP0061536B1 (enExample) |
| JP (1) | JPS57112021A (enExample) |
| DE (1) | DE3170209D1 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3336901A1 (de) * | 1983-10-11 | 1985-04-18 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Maskenmarkierung und substratmarkierung fuer ein verfahren zum justieren einer eine maskenmarkierung enthaltenden photomaske auf einer substratmarkierung |
| JPS62108206A (ja) * | 1985-11-06 | 1987-05-19 | Canon Inc | カラ−フィルタ−の製造方法 |
| JPS6336033U (enExample) * | 1986-08-22 | 1988-03-08 | ||
| GB8803171D0 (en) * | 1988-02-11 | 1988-03-09 | English Electric Valve Co Ltd | Imaging apparatus |
| GB8806232D0 (en) * | 1988-03-16 | 1988-04-13 | Plessey Co Plc | Vernier structure for flip chip bonded devices |
| JP2754609B2 (ja) * | 1988-06-08 | 1998-05-20 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3118899B2 (ja) * | 1991-10-01 | 2000-12-18 | 日本電気株式会社 | アライメントチェックパターン |
| US5503959A (en) * | 1991-10-31 | 1996-04-02 | Intel Corporation | Lithographic technique for patterning a semiconductor device |
| US5407763A (en) * | 1992-05-28 | 1995-04-18 | Ceridian Corporation | Mask alignment mark system |
| US5450109A (en) * | 1993-03-24 | 1995-09-12 | Hewlett-Packard Company | Barrier alignment and process monitor for TIJ printheads |
| US5316984A (en) * | 1993-03-25 | 1994-05-31 | Vlsi Technology, Inc. | Bright field wafer target |
| JP3693370B2 (ja) * | 1994-10-18 | 2005-09-07 | 株式会社ルネサステクノロジ | 重合わせ精度測定マーク |
| JP3420391B2 (ja) * | 1995-06-20 | 2003-06-23 | キヤノン株式会社 | 電気回路基板におけるアライメントマーク構造 |
| KR100352836B1 (ko) * | 1995-12-15 | 2002-12-16 | 주식회사 하이닉스반도체 | 반도체 소자의 중첩 정밀도 측정 마크 |
| EP0841594A3 (en) | 1996-11-07 | 1999-08-25 | Nikon Corporation | Mark for position detection, mark detecting method and apparatus, and exposure system |
| US6102516A (en) * | 1997-03-17 | 2000-08-15 | Lexmark International, Inc. | Fiducial system and method for conducting an inspection to determine if a second element is properly aligned relative to a first element |
| WO1999056308A1 (en) | 1998-04-28 | 1999-11-04 | Nikon Corporation | Exposure system and method of manufacturing micro device |
| US6228743B1 (en) | 1998-05-04 | 2001-05-08 | Motorola, Inc. | Alignment method for semiconductor device |
| CN1163782C (zh) * | 1999-07-22 | 2004-08-25 | 皇家菲利浦电子有限公司 | 显示装置、设有显示装置的设备及制造该显示装置的方法 |
| US6612159B1 (en) * | 1999-08-26 | 2003-09-02 | Schlumberger Technologies, Inc. | Overlay registration error measurement made simultaneously for more than two semiconductor wafer layers |
| US6498640B1 (en) * | 1999-12-30 | 2002-12-24 | Koninklijke Philips Electronics N.V. | Method to measure alignment using latent image grating structures |
| US6856029B1 (en) * | 2001-06-22 | 2005-02-15 | Lsi Logic Corporation | Process independent alignment marks |
| DE10137105A1 (de) * | 2001-07-30 | 2003-02-27 | Infineon Technologies Ag | Halbleiteranordnung, Verfahren zum Herstellen einer solchen sowie Verwendung von Messmarken einer solchen |
| TW200407995A (en) * | 2002-11-08 | 2004-05-16 | Nanya Technology Corp | Mark and method for multiple alignment |
| JP2005101150A (ja) * | 2003-09-24 | 2005-04-14 | Renesas Technology Corp | アライメントマークの形成方法 |
| US7737534B2 (en) * | 2008-06-10 | 2010-06-15 | Northrop Grumman Systems Corporation | Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer |
| KR101136973B1 (ko) * | 2008-12-11 | 2012-04-19 | 한국전자통신연구원 | 통합 보안 장치 및 통합 보안 방법 |
| AT12737U1 (de) * | 2010-09-17 | 2012-10-15 | Austria Tech & System Tech | Verfahren zum herstellen einer aus mehreren leiterplattenbereichen bestehenden leiterplatte sowie leiterplatte |
| WO2016154539A1 (en) | 2015-03-26 | 2016-09-29 | Doug Carson & Associates, Inc. | Substrate alignment through detection of rotating tming pattern |
| US10134624B2 (en) | 2015-03-26 | 2018-11-20 | Doug Carson & Associates, Inc. | Substrate alignment detection using circumferentially extending timing pattern |
| US9953806B1 (en) | 2015-03-26 | 2018-04-24 | Doug Carson & Associates, Inc. | Substrate alignment detection using circumferentially extending timing pattern |
| US9806031B2 (en) * | 2015-04-22 | 2017-10-31 | United Microelectronics Corp. | Monitor method for process control in a semiconductor fabrication process |
| JP6414141B2 (ja) * | 2016-05-31 | 2018-10-31 | 日亜化学工業株式会社 | 発光装置 |
| CN109856930B (zh) * | 2017-11-30 | 2021-05-25 | 京东方科技集团股份有限公司 | 对准标记、基板及其制作方法、曝光对准方法 |
| CN109141237B (zh) * | 2018-08-20 | 2020-10-13 | 武汉华星光电半导体显示技术有限公司 | 一种检测器件的误测判断的方法及装置 |
| CN113534626B (zh) * | 2020-04-14 | 2024-07-16 | 中国科学院微电子研究所 | 用于套刻精度测量的标记系统及量测方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3617267A (en) * | 1969-04-24 | 1971-11-02 | Itek Corp | Process for forming a series of masters in register |
| US3783520A (en) * | 1970-09-28 | 1974-01-08 | Bell Telephone Labor Inc | High accuracy alignment procedure utilizing moire patterns |
| GB1501158A (en) * | 1974-05-13 | 1978-02-15 | Siemens Ag | Production of multilayer structures in semiconductor chip |
| JPS5534442A (en) * | 1978-08-31 | 1980-03-11 | Fujitsu Ltd | Preparation of semiconductor device |
| US4309813A (en) * | 1979-12-26 | 1982-01-12 | Harris Corporation | Mask alignment scheme for laterally and totally dielectrically isolated integrated circuits |
-
1980
- 1980-12-29 JP JP55187308A patent/JPS57112021A/ja active Granted
-
1981
- 1981-12-16 US US06/331,477 patent/US4423127A/en not_active Expired - Fee Related
- 1981-12-17 DE DE8181110535T patent/DE3170209D1/de not_active Expired
- 1981-12-17 EP EP81110535A patent/EP0061536B1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57112021A (en) | 1982-07-12 |
| EP0061536B1 (en) | 1985-04-24 |
| EP0061536A1 (en) | 1982-10-06 |
| JPS6135693B2 (enExample) | 1986-08-14 |
| US4423127A (en) | 1983-12-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8363 | Opposition against the patent | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: REINLAENDER, C., DIPL.-ING. DR.-ING., PAT.-ANW., 8000 MUENCHEN |
|
| 8365 | Fully valid after opposition proceedings | ||
| 8339 | Ceased/non-payment of the annual fee |