DE3170200D1 - Solid-state imaging device - Google Patents
Solid-state imaging deviceInfo
- Publication number
- DE3170200D1 DE3170200D1 DE8181110247T DE3170200T DE3170200D1 DE 3170200 D1 DE3170200 D1 DE 3170200D1 DE 8181110247 T DE8181110247 T DE 8181110247T DE 3170200 T DE3170200 T DE 3170200T DE 3170200 D1 DE3170200 D1 DE 3170200D1
- Authority
- DE
- Germany
- Prior art keywords
- solid
- imaging device
- state imaging
- state
- imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003384 imaging method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
- H04N3/1568—Control of the image-sensor operation, e.g. image processing within the image-sensor for disturbance correction or prevention within the image-sensor, e.g. biasing, blooming, smearing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/625—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of smear
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1980177605U JPS57100361U (de) | 1980-12-12 | 1980-12-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3170200D1 true DE3170200D1 (en) | 1985-05-30 |
Family
ID=16033916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8181110247T Expired DE3170200D1 (en) | 1980-12-12 | 1981-12-08 | Solid-state imaging device |
Country Status (4)
Country | Link |
---|---|
US (1) | US4443818A (de) |
EP (1) | EP0054244B1 (de) |
JP (1) | JPS57100361U (de) |
DE (1) | DE3170200D1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58169965A (ja) * | 1982-03-31 | 1983-10-06 | Hitachi Ltd | 固体撮像装置 |
JPS5952974A (ja) * | 1982-09-20 | 1984-03-27 | Hitachi Ltd | 固体撮像装置 |
JPS5966277A (ja) * | 1982-10-07 | 1984-04-14 | Toshiba Corp | 固体イメ−ジセンサ |
FR2551938B2 (fr) * | 1983-09-09 | 1987-01-30 | Thomson Csf | Procede d'analyse d'un dispositif photosensible a transfert de ligne et dispositif de mise en oeuvre d'un tel procede |
US4507684A (en) * | 1983-03-07 | 1985-03-26 | Rca Corporation | Reducing grain in multi-phase-clocked CCD imagers |
US4620231A (en) * | 1984-06-18 | 1986-10-28 | Rca Corporation | CCD imager with photodetector bias introduced via the CCD register |
EP0455311B1 (de) * | 1984-12-26 | 2001-03-14 | Canon Kabushiki Kaisha | Bildsensoranordnung |
USRE34309E (en) * | 1984-12-26 | 1993-07-13 | Canon Kabushiki Kaisha | Image sensor device having plural photoelectric converting elements |
FR2580883B1 (fr) * | 1985-04-19 | 1987-05-22 | Thomson Csf | Dispositif de lecture par transfert de ligne avec contre-reaction |
JP2727584B2 (ja) * | 1988-09-20 | 1998-03-11 | ソニー株式会社 | 固体撮像装置 |
JP2003110944A (ja) * | 2001-10-02 | 2003-04-11 | Sanyo Electric Co Ltd | 撮像装置 |
US10347681B2 (en) * | 2016-02-19 | 2019-07-09 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
CN109728020A (zh) * | 2018-12-29 | 2019-05-07 | 中国电子科技集团公司第四十四研究所 | 一种三相驱动结构ccd的水平区结构及其驱动电路 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3919468A (en) * | 1972-11-27 | 1975-11-11 | Rca Corp | Charge transfer circuits |
US3801884A (en) * | 1972-12-18 | 1974-04-02 | Bell Telephone Labor Inc | Charge transfer imaging devices |
US4064533A (en) * | 1975-10-24 | 1977-12-20 | Westinghouse Electric Corporation | CCD focal plane processor for moving target imaging |
US4055836A (en) * | 1976-08-26 | 1977-10-25 | Rca Corporation | Charge transfer readout circuits |
GB1589779A (en) * | 1976-12-20 | 1981-05-20 | Hughes Aircraft Co | Moving target indicator system utilising charge-coupled devices |
JPS5839386B2 (ja) * | 1978-02-22 | 1983-08-30 | 株式会社東芝 | 電荷転送形イメ−ジセンサ |
JPS55145481A (en) * | 1979-04-28 | 1980-11-13 | Canon Inc | Mos image sensor |
JPS6030151B2 (ja) * | 1979-10-19 | 1985-07-15 | 松下電子工業株式会社 | 固体撮像装置 |
JPS5678364U (de) * | 1979-11-14 | 1981-06-25 |
-
1980
- 1980-12-12 JP JP1980177605U patent/JPS57100361U/ja active Pending
-
1981
- 1981-12-08 DE DE8181110247T patent/DE3170200D1/de not_active Expired
- 1981-12-08 EP EP81110247A patent/EP0054244B1/de not_active Expired
- 1981-12-10 US US06/329,609 patent/US4443818A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPS57100361U (de) | 1982-06-21 |
US4443818A (en) | 1984-04-17 |
EP0054244B1 (de) | 1985-04-24 |
EP0054244A1 (de) | 1982-06-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3070821D1 (en) | Solid-state imaging apparatus | |
GB2132051B (en) | Solid-state imaging device | |
GB2043390B (en) | Solid-state imaging device | |
DE3162013D1 (en) | A solid-state imaging device | |
DE3171574D1 (en) | Solid state image pickup device | |
GB2035746B (en) | Solid-state imaging apparatus | |
JPS57100573A (en) | Camera device | |
DE3070424D1 (en) | Solid-state imaging device | |
JPS56140658A (en) | Solid state color imaging device | |
DE3063289D1 (en) | Solid-state imaging device | |
GB2069237B (en) | Solid state image-sensing device | |
GB2152781B (en) | Imaging device | |
DE3269826D1 (en) | Imaging device | |
DE3172559D1 (en) | Solid-state imaging device | |
DE3265936D1 (en) | Solid-state color imaging device | |
GB2045572B (en) | Solid-state imaging device | |
GB2046015B (en) | Solid-state imaging device | |
EP0056738A3 (en) | Solid-state imaging apparatus | |
DE3062124D1 (en) | Solid-state imaging device | |
GB2013026B (en) | Solid-state imaging device | |
DE3170200D1 (en) | Solid-state imaging device | |
DE3171759D1 (en) | Solid-state imaging device | |
DE2966208D1 (en) | Solid-state imaging device | |
DE3367492D1 (en) | Solid-state imaging device | |
DE3176376D1 (en) | Solid-state imaging device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |