DE3168866D1 - Read-only memory device - Google Patents

Read-only memory device

Info

Publication number
DE3168866D1
DE3168866D1 DE8181302008T DE3168866T DE3168866D1 DE 3168866 D1 DE3168866 D1 DE 3168866D1 DE 8181302008 T DE8181302008 T DE 8181302008T DE 3168866 T DE3168866 T DE 3168866T DE 3168866 D1 DE3168866 D1 DE 3168866D1
Authority
DE
Germany
Prior art keywords
read
memory device
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181302008T
Other languages
English (en)
Inventor
Koichi Mikome
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3168866D1 publication Critical patent/DE3168866D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
DE8181302008T 1980-05-09 1981-05-07 Read-only memory device Expired DE3168866D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6129680A JPS56157056A (en) 1980-05-09 1980-05-09 Manufacture of read-only memory

Publications (1)

Publication Number Publication Date
DE3168866D1 true DE3168866D1 (en) 1985-03-28

Family

ID=13167083

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181302008T Expired DE3168866D1 (en) 1980-05-09 1981-05-07 Read-only memory device

Country Status (5)

Country Link
US (1) US4384345A (de)
EP (1) EP0040495B1 (de)
JP (1) JPS56157056A (de)
DE (1) DE3168866D1 (de)
IE (1) IE51444B1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4441167A (en) * 1981-12-03 1984-04-03 Raytheon Company Reprogrammable read only memory
US4494218A (en) * 1982-06-01 1985-01-15 General Instrument Corporation Read only memory using series connected depletion transistors as bus lines
JPS6030170A (ja) * 1983-07-29 1985-02-15 Hitachi Ltd 高集積読み出し専用メモリ
JPS60170967A (ja) * 1984-02-16 1985-09-04 Nec Corp 半導体集積回路
JPS6110269A (ja) * 1984-06-26 1986-01-17 Nec Corp 半導体集積回路
JPS61150369A (ja) * 1984-12-25 1986-07-09 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法
JP2605687B2 (ja) * 1986-04-17 1997-04-30 三菱電機株式会社 半導体装置
JPS63108746A (ja) * 1986-10-27 1988-05-13 Nec Corp プログラマブルロジツクアレイ
JPH0691223B2 (ja) * 1987-07-06 1994-11-14 三菱電機株式会社 Ｒｏｍ装置及びその形成方法
EP0333207B1 (de) * 1988-03-18 1997-06-11 Kabushiki Kaisha Toshiba Masken-rom mit Ersatzspeicherzellen
JPH01164058A (ja) * 1988-08-17 1989-06-28 Nec Corp 半導体集積回路
US5117389A (en) * 1990-09-05 1992-05-26 Macronix International Co., Ltd. Flat-cell read-only-memory integrated circuit
US5488006A (en) * 1990-09-20 1996-01-30 Mitsubishi Denki Kabushiki Kaisha One-chip microcomputer manufacturing method
JPH04354159A (ja) * 1991-05-31 1992-12-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5309389A (en) * 1993-08-27 1994-05-03 Honeywell Inc. Read-only memory with complementary data lines
FR2730345B1 (fr) * 1995-02-03 1997-04-04 Matra Mhs Procede de fabrication d'une memoire morte en technologie mos, et memoire ainsi obtenue
US5644154A (en) * 1995-03-27 1997-07-01 Microchip Technology Incorporated MOS read-only semiconductor memory with selected source/drain regions spaced away from edges of overlying gate electrode regions and method therefor
US5602788A (en) * 1996-06-07 1997-02-11 International Business Machines Corporation Read only memory having localized reference bit lines
US5907778A (en) * 1997-06-07 1999-05-25 United Microelectronics Corp. Method of fabricating the high-density diode-based read-only memory device
US6327178B1 (en) 2000-07-18 2001-12-04 Micron Technology, Inc. Programmable circuit and its method of operation
JP2003224212A (ja) * 2002-01-30 2003-08-08 Mitsubishi Electric Corp 半導体装置及びその製造方法
US7920403B2 (en) * 2005-07-27 2011-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. ROM cell array structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3665426A (en) * 1970-10-07 1972-05-23 Singer Co Alterable read only memory organization
US3983544A (en) * 1975-08-25 1976-09-28 International Business Machines Corporation Split memory array sharing same sensing and bit decode circuitry
JPS5333076A (en) * 1976-09-09 1978-03-28 Toshiba Corp Production of mos type integrated circuit

Also Published As

Publication number Publication date
IE811024L (en) 1981-11-09
US4384345A (en) 1983-05-17
IE51444B1 (en) 1986-12-24
JPS56157056A (en) 1981-12-04
EP0040495B1 (de) 1985-02-13
JPH0253948B2 (de) 1990-11-20
EP0040495A1 (de) 1981-11-25

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee