DE3168576D1 - Process for fabricating an integrated pnp and npn transistor structure - Google Patents

Process for fabricating an integrated pnp and npn transistor structure

Info

Publication number
DE3168576D1
DE3168576D1 DE8181102499T DE3168576T DE3168576D1 DE 3168576 D1 DE3168576 D1 DE 3168576D1 DE 8181102499 T DE8181102499 T DE 8181102499T DE 3168576 T DE3168576 T DE 3168576T DE 3168576 D1 DE3168576 D1 DE 3168576D1
Authority
DE
Germany
Prior art keywords
fabricating
npn transistor
transistor structure
integrated pnp
pnp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181102499T
Other languages
German (de)
English (en)
Inventor
Cheng Tzong Horng
Richard Robert Konian
Robert Otto Schwenker
Armin Wilhelm Wieder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3168576D1 publication Critical patent/DE3168576D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0114—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including vertical BJTs and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0143—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising concurrently refilling multiple trenches having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
DE8181102499T 1980-05-05 1981-04-02 Process for fabricating an integrated pnp and npn transistor structure Expired DE3168576D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/146,921 US4339767A (en) 1980-05-05 1980-05-05 High performance PNP and NPN transistor structure

Publications (1)

Publication Number Publication Date
DE3168576D1 true DE3168576D1 (en) 1985-03-14

Family

ID=22519583

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181102499T Expired DE3168576D1 (en) 1980-05-05 1981-04-02 Process for fabricating an integrated pnp and npn transistor structure

Country Status (5)

Country Link
US (1) US4339767A (enExample)
EP (1) EP0039411B1 (enExample)
JP (1) JPS571256A (enExample)
CA (1) CA1148269A (enExample)
DE (1) DE3168576D1 (enExample)

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US4415371A (en) * 1980-12-29 1983-11-15 Rockwell International Corporation Method of making sub-micron dimensioned NPN lateral transistor
US4743565A (en) * 1981-03-30 1988-05-10 International Business Machines Corporation Lateral device structures using self-aligned fabrication techniques
US4688073A (en) * 1981-03-30 1987-08-18 Goth George R Lateral device structures using self-aligned fabrication techniques
JPS57201070A (en) * 1981-06-05 1982-12-09 Seiko Epson Corp Semiconductor device
US4624046A (en) * 1982-01-04 1986-11-25 Fairchild Camera & Instrument Corp. Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM
US4712125A (en) * 1982-08-06 1987-12-08 International Business Machines Corporation Structure for contacting a narrow width PN junction region
JPS5940571A (ja) * 1982-08-30 1984-03-06 Hitachi Ltd 半導体装置
JPS5943545A (ja) * 1982-09-06 1984-03-10 Hitachi Ltd 半導体集積回路装置
US4546536A (en) * 1983-08-04 1985-10-15 International Business Machines Corporation Fabrication methods for high performance lateral bipolar transistors
US4492008A (en) * 1983-08-04 1985-01-08 International Business Machines Corporation Methods for making high performance lateral bipolar transistors
GB2148593B (en) * 1983-10-14 1987-06-10 Hitachi Ltd Process for manufacturing the isolating regions of a semiconductor integrated circuit device
US4510676A (en) * 1983-12-06 1985-04-16 International Business Machines, Corporation Method of fabricating a lateral PNP transistor
DE3586341T2 (de) * 1984-02-03 1993-02-04 Advanced Micro Devices Inc Bipolartransistor mit in schlitzen gebildeten aktiven elementen.
JPH0618198B2 (ja) * 1984-02-15 1994-03-09 株式会社日立製作所 半導体装置
US6372596B1 (en) * 1985-01-30 2002-04-16 Texas Instruments Incorporated Method of making horizontal bipolar transistor with insulated base structure
US4663831A (en) * 1985-10-08 1987-05-12 Motorola, Inc. Method of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layers
US4719185A (en) * 1986-04-28 1988-01-12 International Business Machines Corporation Method of making shallow junction complementary vertical bipolar transistor pair
US4910575A (en) * 1986-06-16 1990-03-20 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit and its manufacturing method
DE3681291D1 (de) * 1986-12-18 1991-10-10 Itt Ind Gmbh Deutsche Kollektorkontakt eines integrierten bipolartransistors.
JPS63212786A (ja) * 1987-02-26 1988-09-05 Sumitomo Electric Ind Ltd ポンプロ−タ
US4829015A (en) * 1987-05-21 1989-05-09 Siemens Aktiengesellschaft Method for manufacturing a fully self-adjusted bipolar transistor
US4860077A (en) * 1987-09-28 1989-08-22 Motorola, Inc. Vertical semiconductor device having a sidewall emitter
US4951115A (en) * 1989-03-06 1990-08-21 International Business Machines Corp. Complementary transistor structure and method for manufacture
US4997775A (en) * 1990-02-26 1991-03-05 Cook Robert K Method for forming a complementary bipolar transistor structure including a self-aligned vertical PNP transistor
US5164812A (en) * 1991-05-01 1992-11-17 Hall John H Conductance modulated integrated transistor structure with low drain capacitance
DE4417916A1 (de) * 1994-05-24 1995-11-30 Telefunken Microelectron Verfahren zur Herstellung eines Bipolartransistors
FR2756103B1 (fr) * 1996-11-19 1999-05-14 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos et d'un condensateur
FR2756100B1 (fr) 1996-11-19 1999-02-12 Sgs Thomson Microelectronics Transistor bipolaire a emetteur inhomogene dans un circuit integre bicmos
FR2756974B1 (fr) * 1996-12-10 1999-06-04 Sgs Thomson Microelectronics Transistor bipolaire a isolement par caisson
EP0881688A1 (en) 1997-05-30 1998-12-02 STMicroelectronics S.r.l. PNP lateral bipolar electronic device
ATE208369T1 (de) 1997-08-13 2001-11-15 Biontex Lab Gmbh Neue lipopolyamine, deren darstellung und anwendung
US5879992A (en) * 1998-07-15 1999-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating step poly to improve program speed in split gate flash
US7369965B2 (en) * 2004-06-28 2008-05-06 Honeywell International, Inc. System and method for turbine engine anomaly detection
US7863709B1 (en) * 2007-04-16 2011-01-04 Marvell International Ltd. Low base resistance bipolar junction transistor array
CN102097465B (zh) * 2009-12-15 2012-11-07 上海华虹Nec电子有限公司 BiCMOS工艺中的寄生垂直型PNP三极管及其制造方法
CN109103242B (zh) * 2018-09-30 2023-12-15 江苏明芯微电子股份有限公司 一种穿通结构的可控硅芯片及其生产方法
CN110828560A (zh) * 2019-11-14 2020-02-21 西安微电子技术研究所 一种基区环掺杂抗辐射横向pnp晶体管及制备方法

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US3600651A (en) * 1969-12-08 1971-08-17 Fairchild Camera Instr Co Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon
US3730786A (en) * 1970-09-03 1973-05-01 Ibm Performance matched complementary pair transistors
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
IT1070023B (it) * 1975-11-24 1985-03-25 Ibm Processo di fabbricazione di transistori complementari
US4103415A (en) * 1976-12-09 1978-08-01 Fairchild Camera And Instrument Corporation Insulated-gate field-effect transistor with self-aligned contact hole to source or drain
NL7703941A (nl) * 1977-04-12 1978-10-16 Philips Nv Werkwijze ter vervaardiging van een halfgelei- derinrichting en inrichting, vervaardigd door toepassing van de werkwijze.
US4160991A (en) * 1977-10-25 1979-07-10 International Business Machines Corporation High performance bipolar device and method for making same
US4159915A (en) * 1977-10-25 1979-07-03 International Business Machines Corporation Method for fabrication vertical NPN and PNP structures utilizing ion-implantation
US4196440A (en) * 1978-05-25 1980-04-01 International Business Machines Corporation Lateral PNP or NPN with a high gain
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
US4318751A (en) * 1980-03-13 1982-03-09 International Business Machines Corporation Self-aligned process for providing an improved high performance bipolar transistor
US4319932A (en) * 1980-03-24 1982-03-16 International Business Machines Corporation Method of making high performance bipolar transistor with polysilicon base contacts

Also Published As

Publication number Publication date
EP0039411A2 (en) 1981-11-11
JPS571256A (en) 1982-01-06
JPS6226590B2 (enExample) 1987-06-09
US4339767A (en) 1982-07-13
CA1148269A (en) 1983-06-14
EP0039411A3 (en) 1982-03-17
EP0039411B1 (en) 1985-01-30

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee