DE3165141D1 - Process for doping semiconductors rapidly - Google Patents

Process for doping semiconductors rapidly

Info

Publication number
DE3165141D1
DE3165141D1 DE8181400114T DE3165141T DE3165141D1 DE 3165141 D1 DE3165141 D1 DE 3165141D1 DE 8181400114 T DE8181400114 T DE 8181400114T DE 3165141 T DE3165141 T DE 3165141T DE 3165141 D1 DE3165141 D1 DE 3165141D1
Authority
DE
Germany
Prior art keywords
rapidly
doping semiconductors
semiconductors
doping
semiconductors rapidly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181400114T
Other languages
German (de)
English (en)
Inventor
Michel Bruel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE3165141D1 publication Critical patent/DE3165141D1/de
Expired legal-status Critical Current

Links

Classifications

    • H10P30/224—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26566—Bombardment with radiation with high-energy radiation producing ion implantation of a cluster, e.g. using a gas cluster ion beam
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H10P30/20—
    • H10P30/204—
    • H10P30/21—

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)
DE8181400114T 1980-02-01 1981-01-27 Process for doping semiconductors rapidly Expired DE3165141D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8002239A FR2475069A1 (fr) 1980-02-01 1980-02-01 Procede de dopage rapide de semi-conducteurs

Publications (1)

Publication Number Publication Date
DE3165141D1 true DE3165141D1 (en) 1984-09-06

Family

ID=9238111

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181400114T Expired DE3165141D1 (en) 1980-02-01 1981-01-27 Process for doping semiconductors rapidly

Country Status (5)

Country Link
US (1) US4370176A (enExample)
EP (1) EP0033685B1 (enExample)
JP (1) JPS56122127A (enExample)
DE (1) DE3165141D1 (enExample)
FR (1) FR2475069A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2506344B2 (fr) * 1980-02-01 1986-07-11 Commissariat Energie Atomique Procede de dopage de semi-conducteurs
JPS56115527A (en) * 1980-02-15 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS56115526A (en) * 1980-02-15 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
BG32652A1 (en) * 1980-03-13 1982-09-15 Kolev Method for surface laying of metals on synthetic, natural and artificial polymers
US4281030A (en) * 1980-05-12 1981-07-28 Bell Telephone Laboratories, Incorporated Implantation of vaporized material on melted substrates
JPS58147035U (ja) * 1982-03-26 1983-10-03 いすゞ自動車株式会社 トランスミツシヨン変速装置
US4587430A (en) * 1983-02-10 1986-05-06 Mission Research Corporation Ion implantation source and device
US4670063A (en) * 1985-04-10 1987-06-02 Eaton Corporation Semiconductor processing technique with differentially fluxed radiation at incremental thicknesses
US4987007A (en) * 1988-04-18 1991-01-22 Board Of Regents, The University Of Texas System Method and apparatus for producing a layer of material from a laser ion source
US5411797A (en) * 1988-04-18 1995-05-02 Board Of Regents, The University Of Texas System Nanophase diamond films
US5389195A (en) * 1991-03-07 1995-02-14 Minnesota Mining And Manufacturing Company Surface modification by accelerated plasma or ions
DE69218820T2 (de) * 1991-03-07 1997-10-02 Minnesota Mining & Mfg Polymer mit vernetztem Flächengebiet
WO1996012389A1 (en) * 1994-10-18 1996-04-25 Edsi, Inc. Apparatus for depositing a layer of material on a substrate
US7231332B2 (en) * 1996-12-19 2007-06-12 Fujitsu Limited Apparatus and method for simulating phenomena of a particle formed of substrate particles and adsorbate particles
US5943594A (en) * 1997-04-30 1999-08-24 International Business Machines Corporation Method for extended ion implanter source lifetime with control mechanism
US6486593B1 (en) 2000-09-29 2002-11-26 The United States Of America As Represented By The United States Department Of Energy Plasma accelerator
US7045878B2 (en) * 2001-05-18 2006-05-16 Reveo, Inc. Selectively bonded thin film layer and substrate layer for processing of useful devices
US6956268B2 (en) * 2001-05-18 2005-10-18 Reveo, Inc. MEMS and method of manufacturing MEMS
US6875671B2 (en) * 2001-09-12 2005-04-05 Reveo, Inc. Method of fabricating vertical integrated circuits
US7163826B2 (en) * 2001-09-12 2007-01-16 Reveo, Inc Method of fabricating multi layer devices on buried oxide layer substrates
US7033910B2 (en) * 2001-09-12 2006-04-25 Reveo, Inc. Method of fabricating multi layer MEMS and microfluidic devices
US7951258B2 (en) 2002-03-29 2011-05-31 Lamera Ab Arrangement and methods for the manufacture of composite layer structures
JP4744141B2 (ja) * 2002-06-26 2011-08-10 セムエキップ インコーポレイテッド Ｎ及びｐ型クラスターイオン及び陰イオンの注入によるｃｍｏｓ素子の製造方法
US20040002202A1 (en) * 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
EP1584104A4 (en) * 2002-12-12 2010-05-26 Tel Epion Inc RE-CRYSTALLIZATION OF A SEMICONDUCTIVE SURFACE FILM AND SEMICONDUCTOR DOTING BY MEANS OF ENERGETIC CLUSTER RADIATION
WO2004071948A2 (en) * 2003-02-10 2004-08-26 Reveo, Inc. Micro-nozzle, nano-nozzle, manufacturing methods therefor, applications therefor
FR2978600B1 (fr) 2011-07-25 2014-02-07 Soitec Silicon On Insulator Procede et dispositif de fabrication de couche de materiau semi-conducteur
RU2597389C2 (ru) * 2014-10-06 2016-09-10 Акционерное общество "Рязанский завод металлокерамических приборов" (АО "РЗМКП") Способ легирования кремния

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1373822A (fr) * 1963-08-21 1964-10-02 Europ Des Semiconducteurs Soc Procédé de réalisation de diffusion localisée d'une impureté dans un semiconducteur
US4021675A (en) * 1973-02-20 1977-05-03 Hughes Aircraft Company System for controlling ion implantation dosage in electronic materials
JPS5148097A (en) * 1974-10-23 1976-04-24 Osaka Koon Denki Kk Iongen
FR2298880A1 (fr) * 1975-01-22 1976-08-20 Commissariat Energie Atomique Procede et dispositif d'implantation ionique
JPS5283084A (en) * 1975-12-30 1977-07-11 Futaba Denshi Kogyo Kk Pn junction solid state element and method of producing same
JPS5372A (en) * 1976-06-24 1978-01-05 Agency Of Ind Science & Technol Selective doping crystal growing method
FR2383702A1 (fr) * 1977-03-18 1978-10-13 Anvar Perfectionnements aux procedes et dispositifs de dopage de materiaux semi-conducteurs
JPS5434754A (en) * 1977-08-24 1979-03-14 Hitachi Ltd Ion implanting method
NL182924C (nl) * 1978-05-12 1988-06-01 Philips Nv Inrichting voor het implanteren van ionen in een trefplaat.
JPS54162452A (en) * 1978-06-13 1979-12-24 Mitsubishi Electric Corp Manufacture of semiconductor and its unit
US4158141A (en) * 1978-06-21 1979-06-12 Hughes Aircraft Company Process for channeling ion beams

Also Published As

Publication number Publication date
JPS56122127A (en) 1981-09-25
FR2475069B1 (enExample) 1983-09-30
EP0033685A1 (fr) 1981-08-12
EP0033685B1 (fr) 1984-08-01
FR2475069A1 (fr) 1981-08-07
US4370176A (en) 1983-01-25

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee