DE3118347C2 - - Google Patents

Info

Publication number
DE3118347C2
DE3118347C2 DE19813118347 DE3118347A DE3118347C2 DE 3118347 C2 DE3118347 C2 DE 3118347C2 DE 19813118347 DE19813118347 DE 19813118347 DE 3118347 A DE3118347 A DE 3118347A DE 3118347 C2 DE3118347 C2 DE 3118347C2
Authority
DE
Germany
Prior art keywords
mis
voltage
emitter
semiconductor
ignition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19813118347
Other languages
German (de)
English (en)
Other versions
DE3118347A1 (de
Inventor
Eberhard Dr.Phil. 8551 Pretzfeld De Spenke
Franz Wilhelm Dipl.-Ing. 8000 Muenchen De Steuer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19813118347 priority Critical patent/DE3118347A1/de
Priority to JP7594782A priority patent/JPS57193059A/ja
Publication of DE3118347A1 publication Critical patent/DE3118347A1/de
Application granted granted Critical
Publication of DE3118347C2 publication Critical patent/DE3118347C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE19813118347 1981-05-08 1981-05-08 Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb Granted DE3118347A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE19813118347 DE3118347A1 (de) 1981-05-08 1981-05-08 Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb
JP7594782A JPS57193059A (en) 1981-05-08 1982-05-06 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813118347 DE3118347A1 (de) 1981-05-08 1981-05-08 Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb

Publications (2)

Publication Number Publication Date
DE3118347A1 DE3118347A1 (de) 1982-11-25
DE3118347C2 true DE3118347C2 (pt) 1990-02-01

Family

ID=6131827

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813118347 Granted DE3118347A1 (de) 1981-05-08 1981-05-08 Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb

Country Status (2)

Country Link
JP (1) JPS57193059A (pt)
DE (1) DE3118347A1 (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3230741A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterschalter mit einem abschaltbaren thyristor
DE3447220A1 (de) * 1983-12-30 1985-07-11 General Electric Co., Schenectady, N.Y. Thyristor mit abschaltvermoegen mit verbessertem emitter-bereich und verfahren zu seiner herstellung
FR2568724A1 (fr) * 1984-08-03 1986-02-07 Centre Nat Rech Scient Composant semi-conducteur de puissance a tension de claquage elevee
JPS6188563A (ja) * 1984-10-08 1986-05-06 Toshiba Corp 半導体スイツチ
JPS61125173A (ja) * 1984-11-22 1986-06-12 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ
EP0280536B1 (en) * 1987-02-26 1997-05-28 Kabushiki Kaisha Toshiba Turn-on driving technique for insulated gate thyristor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293292A (pt) * 1962-06-11
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5933986B2 (ja) * 1975-09-12 1984-08-20 三菱電機株式会社 半導体装置
DE2825794C2 (de) * 1978-06-13 1986-03-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
DE2945324A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten

Also Published As

Publication number Publication date
DE3118347A1 (de) 1982-11-25
JPS57193059A (en) 1982-11-27
JPH0142510B2 (pt) 1989-09-13

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Legal Events

Date Code Title Description
OR8 Request for search as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee