DE3118347C2 - - Google Patents
Info
- Publication number
- DE3118347C2 DE3118347C2 DE19813118347 DE3118347A DE3118347C2 DE 3118347 C2 DE3118347 C2 DE 3118347C2 DE 19813118347 DE19813118347 DE 19813118347 DE 3118347 A DE3118347 A DE 3118347A DE 3118347 C2 DE3118347 C2 DE 3118347C2
- Authority
- DE
- Germany
- Prior art keywords
- mis
- voltage
- emitter
- semiconductor
- ignition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 36
- 230000000903 blocking effect Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 238000012217 deletion Methods 0.000 claims description 4
- 230000037430 deletion Effects 0.000 claims description 4
- 230000006641 stabilisation Effects 0.000 description 6
- 238000011105 stabilization Methods 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19813118347 DE3118347A1 (de) | 1981-05-08 | 1981-05-08 | Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb |
JP7594782A JPS57193059A (en) | 1981-05-08 | 1982-05-06 | Thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19813118347 DE3118347A1 (de) | 1981-05-08 | 1981-05-08 | Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3118347A1 DE3118347A1 (de) | 1982-11-25 |
DE3118347C2 true DE3118347C2 (fr) | 1990-02-01 |
Family
ID=6131827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19813118347 Granted DE3118347A1 (de) | 1981-05-08 | 1981-05-08 | Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS57193059A (fr) |
DE (1) | DE3118347A1 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3230741A1 (de) * | 1982-08-18 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterschalter mit einem abschaltbaren thyristor |
DE3447220A1 (de) * | 1983-12-30 | 1985-07-11 | General Electric Co., Schenectady, N.Y. | Thyristor mit abschaltvermoegen mit verbessertem emitter-bereich und verfahren zu seiner herstellung |
FR2568724A1 (fr) * | 1984-08-03 | 1986-02-07 | Centre Nat Rech Scient | Composant semi-conducteur de puissance a tension de claquage elevee |
JPS6188563A (ja) * | 1984-10-08 | 1986-05-06 | Toshiba Corp | 半導体スイツチ |
JPS61125173A (ja) * | 1984-11-22 | 1986-06-12 | Meidensha Electric Mfg Co Ltd | ゲ−トタ−ンオフサイリスタ |
DE3855922T2 (de) * | 1987-02-26 | 1998-01-02 | Toshiba Kawasaki Kk | An-Steuertechnik für Thyristor mit isolierter Steuerelektrode |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL293292A (fr) * | 1962-06-11 | |||
SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
JPS5933986B2 (ja) * | 1975-09-12 | 1984-08-20 | 三菱電機株式会社 | 半導体装置 |
DE2825794C2 (de) * | 1978-06-13 | 1986-03-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Abschaltbarer Thyristor |
DE2945324A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit verbessertem schaltverhalten |
-
1981
- 1981-05-08 DE DE19813118347 patent/DE3118347A1/de active Granted
-
1982
- 1982-05-06 JP JP7594782A patent/JPS57193059A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
DE3118347A1 (de) | 1982-11-25 |
JPH0142510B2 (fr) | 1989-09-13 |
JPS57193059A (en) | 1982-11-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OR8 | Request for search as to paragraph 43 lit. 1 sentence 1 patent law | ||
8110 | Request for examination paragraph 44 | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |