DE3070563D1 - Ion implantation apparatus - Google Patents

Ion implantation apparatus

Info

Publication number
DE3070563D1
DE3070563D1 DE8080107965T DE3070563T DE3070563D1 DE 3070563 D1 DE3070563 D1 DE 3070563D1 DE 8080107965 T DE8080107965 T DE 8080107965T DE 3070563 T DE3070563 T DE 3070563T DE 3070563 D1 DE3070563 D1 DE 3070563D1
Authority
DE
Germany
Prior art keywords
ion implantation
implantation apparatus
ion
implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080107965T
Other languages
English (en)
Inventor
Junji Sakurai
Haruhisa Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3070563D1 publication Critical patent/DE3070563D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8080107965T 1979-12-26 1980-12-17 Ion implantation apparatus Expired DE3070563D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16961079A JPS5693314A (en) 1979-12-26 1979-12-26 Ion injector

Publications (1)

Publication Number Publication Date
DE3070563D1 true DE3070563D1 (de) 1985-05-30

Family

ID=15889680

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080107965T Expired DE3070563D1 (de) 1979-12-26 1980-12-17 Ion implantation apparatus

Country Status (4)

Country Link
US (1) US4410801A (de)
EP (1) EP0031546B1 (de)
JP (1) JPS5693314A (de)
DE (1) DE3070563D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911988B2 (ja) * 1980-01-23 1984-03-19 株式会社日立製作所 イオン打込み方法
JPS5913012A (ja) * 1982-07-12 1984-01-23 Kawasaki Steel Corp 溶鉄精錬用吹管羽口の保護方法
JPS59132136A (ja) * 1983-01-19 1984-07-30 Hitachi Ltd 半導体装置の製造方法
JP2724459B2 (ja) * 1987-06-05 1998-03-09 セイコーインスツルメンツ株式会社 半導体集積回路装置の製造方法
JP3102550B2 (ja) * 1996-01-31 2000-10-23 日本電気株式会社 イオン注入シミュレーション方法
US6229148B1 (en) 1997-08-11 2001-05-08 Micron Technology, Inc. Ion implantation with programmable energy, angle, and beam current
US6767809B2 (en) * 2002-11-19 2004-07-27 Silterra Malayisa Sdn. Bhd. Method of forming ultra shallow junctions

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE138589C (de) *

Also Published As

Publication number Publication date
EP0031546A2 (de) 1981-07-08
US4410801A (en) 1983-10-18
JPS6157652B2 (de) 1986-12-08
EP0031546B1 (de) 1985-04-24
JPS5693314A (en) 1981-07-28
EP0031546A3 (en) 1981-07-22

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee