DE3068862D1 - Method of surface-treating semiconductor substrate - Google Patents
Method of surface-treating semiconductor substrateInfo
- Publication number
- DE3068862D1 DE3068862D1 DE8080301595T DE3068862T DE3068862D1 DE 3068862 D1 DE3068862 D1 DE 3068862D1 DE 8080301595 T DE8080301595 T DE 8080301595T DE 3068862 T DE3068862 T DE 3068862T DE 3068862 D1 DE3068862 D1 DE 3068862D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor substrate
- treating semiconductor
- treating
- substrate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6122879A JPS55153338A (en) | 1979-05-18 | 1979-05-18 | Surface treatment of semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3068862D1 true DE3068862D1 (en) | 1984-09-13 |
Family
ID=13165140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080301595T Expired DE3068862D1 (en) | 1979-05-18 | 1980-05-16 | Method of surface-treating semiconductor substrate |
Country Status (4)
Country | Link |
---|---|
US (1) | US4294651A (de) |
EP (1) | EP0019468B1 (de) |
JP (1) | JPS55153338A (de) |
DE (1) | DE3068862D1 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4601783A (en) * | 1985-05-31 | 1986-07-22 | Morton Thiokol, Inc. | High concentration sodium permanganate etch batch and its use in desmearing and/or etching printed circuit boards |
US4601784A (en) * | 1985-05-31 | 1986-07-22 | Morton Thiokol, Inc. | Sodium permanganate etch baths containing a co-ion for permanganate and their use in desmearing and/or etching printed circuit boards |
JP2578798B2 (ja) * | 1987-04-23 | 1997-02-05 | 松下電器産業株式会社 | 半導体レ−ザ装置 |
US4940510A (en) * | 1987-06-01 | 1990-07-10 | Digital Equipment Corporation | Method of etching in the presence of positive photoresist |
US5223081A (en) * | 1991-07-03 | 1993-06-29 | Doan Trung T | Method for roughening a silicon or polysilicon surface for a semiconductor substrate |
JPH06204494A (ja) * | 1993-01-07 | 1994-07-22 | Fujitsu Ltd | 絶縁膜の形成方法および半導体素子の製造方法 |
US5827784A (en) * | 1995-12-14 | 1998-10-27 | Texas Instruments Incorporated | Method for improving contact openings during the manufacture of an integrated circuit |
JPH09260342A (ja) * | 1996-03-18 | 1997-10-03 | Mitsubishi Electric Corp | 半導体装置の製造方法及び製造装置 |
US6248664B1 (en) * | 1997-05-19 | 2001-06-19 | Semiconductor Components Industries Llc | Method of forming a contact |
DE19806406C1 (de) * | 1998-02-17 | 1999-07-29 | Sez Semiconduct Equip Zubehoer | Verfahren zum Rauhätzen einer Halbleiter-Oberfläche |
WO2000072368A1 (en) * | 1999-05-21 | 2000-11-30 | Memc Electronic Materials, Inc. | Process for etching a silicon wafer |
US6600557B1 (en) * | 1999-05-21 | 2003-07-29 | Memc Electronic Materials, Inc. | Method for the detection of processing-induced defects in a silicon wafer |
US6482749B1 (en) | 2000-08-10 | 2002-11-19 | Seh America, Inc. | Method for etching a wafer edge using a potassium-based chemical oxidizer in the presence of hydrofluoric acid |
US7067015B2 (en) * | 2002-10-31 | 2006-06-27 | Texas Instruments Incorporated | Modified clean chemistry and megasonic nozzle for removing backside CMP slurries |
SG129274A1 (en) * | 2003-02-19 | 2007-02-26 | Mitsubishi Gas Chemical Co | Cleaaning solution and cleaning process using the solution |
JP2007505485A (ja) * | 2003-09-09 | 2007-03-08 | シーエスジー ソーラー アクチェンゲゼルシャフト | シリコンをエッチングする方法の改良 |
WO2005036629A1 (ja) * | 2003-10-10 | 2005-04-21 | Mimasu Semiconductor Industry Co., Ltd. | ウェーハの粗面処理方法 |
JP2006191021A (ja) * | 2004-12-30 | 2006-07-20 | Siltron Inc | シリコンウェハのd−欠陥評価用腐蝕液、及びこれを利用した評価方法 |
TWI275149B (en) * | 2005-05-09 | 2007-03-01 | Phoenix Prec Technology Corp | Surface roughing method for embedded semiconductor chip structure |
EP2090675B1 (de) * | 2008-01-31 | 2015-05-20 | Imec | Fehlerätzen von Germanium |
CN103187239B (zh) * | 2011-12-29 | 2015-11-25 | 无锡华润上华半导体有限公司 | 去除芯片上锡球的方法 |
CN106252221A (zh) * | 2015-06-13 | 2016-12-21 | 中芯国际集成电路制造(上海)有限公司 | 刻蚀方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2847287A (en) * | 1956-07-20 | 1958-08-12 | Bell Telephone Labor Inc | Etching processes and solutions |
US3309760A (en) * | 1964-11-03 | 1967-03-21 | Bendix Corp | Attaching leads to semiconductors |
US3791948A (en) * | 1971-11-01 | 1974-02-12 | Bell Telephone Labor Inc | Preferential etching in g a p |
US3833435A (en) * | 1972-09-25 | 1974-09-03 | Bell Telephone Labor Inc | Dielectric optical waveguides and technique for fabricating same |
GB1447866A (en) * | 1972-11-10 | 1976-09-02 | Nat Res Dev | Charge coupled devices and methods of fabricating them |
US3936331A (en) * | 1974-04-01 | 1976-02-03 | Fairchild Camera And Instrument Corporation | Process for forming sloped topography contact areas between polycrystalline silicon and single-crystal silicon |
US3986251A (en) * | 1974-10-03 | 1976-10-19 | Motorola, Inc. | Germanium doped light emitting diode bonding process |
NL7505134A (nl) * | 1975-05-01 | 1976-11-03 | Philips Nv | Werkwijze voor het vervaardigen van een half- geleiderinrichting. |
US4137123A (en) * | 1975-12-31 | 1979-01-30 | Motorola, Inc. | Texture etching of silicon: method |
DE2600990A1 (de) * | 1976-01-13 | 1977-07-21 | Wacker Chemitronic | Verfahren zum polieren von halbleiteroberflaechen, insbesondere galliumphosphidoberflaechen |
DE2638302A1 (de) * | 1976-08-25 | 1978-03-02 | Wacker Chemitronic | Aetzmittel fuer iii/v-halbleiter |
JPS5346633A (en) * | 1976-10-12 | 1978-04-26 | Nippon Electric Ind | Transistor inverter |
US4171242A (en) * | 1976-12-17 | 1979-10-16 | International Business Machines Corporation | Neutral pH silicon etchant for etching silicon in the presence of phosphosilicate glass |
FR2374396A1 (fr) * | 1976-12-17 | 1978-07-13 | Ibm | Composition de decapage du silicium |
US4147564A (en) * | 1977-11-18 | 1979-04-03 | Sri International | Method of controlled surface texturization of crystalline semiconductor material |
-
1979
- 1979-05-18 JP JP6122879A patent/JPS55153338A/ja active Granted
-
1980
- 1980-05-16 US US06/150,686 patent/US4294651A/en not_active Expired - Lifetime
- 1980-05-16 DE DE8080301595T patent/DE3068862D1/de not_active Expired
- 1980-05-16 EP EP80301595A patent/EP0019468B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPH0121618B2 (de) | 1989-04-21 |
US4294651A (en) | 1981-10-13 |
JPS55153338A (en) | 1980-11-29 |
EP0019468A1 (de) | 1980-11-26 |
EP0019468B1 (de) | 1984-08-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |