DE3000891A1 - Halbleiterbaustein mit gattersteuerung - Google Patents
Halbleiterbaustein mit gattersteuerungInfo
- Publication number
- DE3000891A1 DE3000891A1 DE19803000891 DE3000891A DE3000891A1 DE 3000891 A1 DE3000891 A1 DE 3000891A1 DE 19803000891 DE19803000891 DE 19803000891 DE 3000891 A DE3000891 A DE 3000891A DE 3000891 A1 DE3000891 A1 DE 3000891A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- cathode
- semiconductor component
- component according
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 38
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 description 10
- 230000007704 transition Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP236479A JPS5595362A (en) | 1979-01-12 | 1979-01-12 | Turn-off thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3000891A1 true DE3000891A1 (de) | 1980-07-24 |
| DE3000891C2 DE3000891C2 (enrdf_load_stackoverflow) | 1988-07-28 |
Family
ID=11527196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803000891 Granted DE3000891A1 (de) | 1979-01-12 | 1980-01-11 | Halbleiterbaustein mit gattersteuerung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4486768A (enrdf_load_stackoverflow) |
| JP (1) | JPS5595362A (enrdf_load_stackoverflow) |
| DE (1) | DE3000891A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2039413B (enrdf_load_stackoverflow) |
| SE (1) | SE445083B (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3118291A1 (de) * | 1981-05-08 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | Triac und verfahren zu seinem betrieb |
| DE3230741A1 (de) * | 1982-08-18 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterschalter mit einem abschaltbaren thyristor |
| EP0108874A1 (en) * | 1982-11-15 | 1984-05-23 | Kabushiki Kaisha Toshiba | Radiation-controllable thyristor |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57117276A (en) * | 1981-01-14 | 1982-07-21 | Hitachi Ltd | Semiconductor device |
| JPS5927571A (ja) * | 1982-08-05 | 1984-02-14 | Meidensha Electric Mfg Co Ltd | ゲ−トタ−ンオフサイリスタ |
| DE3855922T2 (de) * | 1987-02-26 | 1998-01-02 | Toshiba Kawasaki Kk | An-Steuertechnik für Thyristor mit isolierter Steuerelektrode |
| CN115579389A (zh) * | 2021-06-21 | 2023-01-06 | 彰武同创销售服务中心 | 一种反馈控制极结构的晶闸管及其制造工艺 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2431022B2 (de) * | 1973-06-27 | 1976-09-23 | Mitsubishi Denki KX., Tokio | Halbleiteranordnung |
| DE2712533A1 (de) * | 1977-03-15 | 1978-12-14 | Meidensha Electric Mfg Co Ltd | Mittels einer steuerelektrode gesteuertes halbleiterbauelement, insbesondere thyristor |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3544818A (en) * | 1967-12-26 | 1970-12-01 | Bell Telephone Labor Inc | Thyristor switch circuit |
| US4217504A (en) * | 1975-08-04 | 1980-08-12 | Licentia-Patent Verwaltungs Gmbh | Semiconductor switch with thyristors |
| DE2607678A1 (de) * | 1976-02-25 | 1977-09-01 | Siemens Ag | Anordnung zum herabsetzen der freiwerdezeit eines thyristors |
| US4115707A (en) * | 1977-03-31 | 1978-09-19 | Rca Corporation | Circuit for single-line control of GTO controlled rectifier conduction |
| JPS5942991B2 (ja) * | 1977-05-23 | 1984-10-18 | 株式会社日立製作所 | サイリスタ |
| DE2748316C2 (de) * | 1977-10-27 | 1986-09-04 | Siemens AG, 1000 Berlin und 8000 München | Schaltungsanordnung zum Herabsetzen der Freiwerdezeit eines Thyristors |
-
1979
- 1979-01-12 JP JP236479A patent/JPS5595362A/ja active Pending
- 1979-12-17 GB GB7943380A patent/GB2039413B/en not_active Expired
- 1979-12-19 SE SE7910463A patent/SE445083B/sv not_active IP Right Cessation
-
1980
- 1980-01-11 DE DE19803000891 patent/DE3000891A1/de active Granted
-
1983
- 1983-08-26 US US06/526,796 patent/US4486768A/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2431022B2 (de) * | 1973-06-27 | 1976-09-23 | Mitsubishi Denki KX., Tokio | Halbleiteranordnung |
| DE2712533A1 (de) * | 1977-03-15 | 1978-12-14 | Meidensha Electric Mfg Co Ltd | Mittels einer steuerelektrode gesteuertes halbleiterbauelement, insbesondere thyristor |
Non-Patent Citations (1)
| Title |
|---|
| Aufsatz: "Thyristoren mit innerer Zündverstärkung (I. Teil)" von J.Burtscher In: "Dynamische Probleme der Thyristortechnik", VDE-Verlag GmbH, Berlin, 1971, S. 128-138 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3118291A1 (de) * | 1981-05-08 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | Triac und verfahren zu seinem betrieb |
| DE3230741A1 (de) * | 1982-08-18 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterschalter mit einem abschaltbaren thyristor |
| EP0108874A1 (en) * | 1982-11-15 | 1984-05-23 | Kabushiki Kaisha Toshiba | Radiation-controllable thyristor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3000891C2 (enrdf_load_stackoverflow) | 1988-07-28 |
| SE7910463L (sv) | 1980-07-13 |
| GB2039413B (en) | 1983-09-14 |
| JPS5595362A (en) | 1980-07-19 |
| US4486768A (en) | 1984-12-04 |
| SE445083B (sv) | 1986-05-26 |
| GB2039413A (en) | 1980-08-06 |
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| Publication | Publication Date | Title |
|---|---|---|
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |