DE2967588D1 - Method for achieving ideal impurity base profile in a transistor - Google Patents

Method for achieving ideal impurity base profile in a transistor

Info

Publication number
DE2967588D1
DE2967588D1 DE8080901014T DE2967588T DE2967588D1 DE 2967588 D1 DE2967588 D1 DE 2967588D1 DE 8080901014 T DE8080901014 T DE 8080901014T DE 2967588 T DE2967588 T DE 2967588T DE 2967588 D1 DE2967588 D1 DE 2967588D1
Authority
DE
Germany
Prior art keywords
transistor
base profile
achieving ideal
impurity base
ideal impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080901014T
Other languages
German (de)
English (en)
Inventor
Billy Lee Crowder
Randall Duane Isaac
Tak Hung Ming
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE2967588D1 publication Critical patent/DE2967588D1/de
Expired legal-status Critical Current

Links

Classifications

    • H10P76/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H10W20/40—
DE8080901014T 1979-12-28 1979-12-28 Method for achieving ideal impurity base profile in a transistor Expired DE2967588D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1979/001137 WO1981001911A1 (en) 1979-12-28 1979-12-28 Method for achieving ideal impurity base profile in a transistor

Publications (1)

Publication Number Publication Date
DE2967588D1 true DE2967588D1 (en) 1986-04-24

Family

ID=22147840

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080901014T Expired DE2967588D1 (en) 1979-12-28 1979-12-28 Method for achieving ideal impurity base profile in a transistor

Country Status (6)

Country Link
EP (1) EP0042380B1 (cg-RX-API-DMAC10.html)
JP (1) JPS6410951B2 (cg-RX-API-DMAC10.html)
CA (1) CA1160363A (cg-RX-API-DMAC10.html)
DE (1) DE2967588D1 (cg-RX-API-DMAC10.html)
IT (1) IT1150096B (cg-RX-API-DMAC10.html)
WO (1) WO1981001911A1 (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4536950A (en) * 1983-02-10 1985-08-27 Matsushita Electric Industrial Co., Ltd. Method for making semiconductor device
US4912053A (en) * 1988-02-01 1990-03-27 Harris Corporation Ion implanted JFET with self-aligned source and drain
US5204276A (en) * 1988-12-06 1993-04-20 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
JPH02153534A (ja) * 1988-12-06 1990-06-13 Toshiba Corp 半導体装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3083441A (en) * 1959-04-13 1963-04-02 Texas Instruments Inc Method for fabricating transistors
US3389023A (en) * 1966-01-14 1968-06-18 Ibm Methods of making a narrow emitter transistor by masking and diffusion
US3432920A (en) * 1966-12-01 1969-03-18 Rca Corp Semiconductor devices and methods of making them
US3489622A (en) * 1967-05-18 1970-01-13 Ibm Method of making high frequency transistors
FR1569872A (cg-RX-API-DMAC10.html) * 1968-04-10 1969-06-06
US3717507A (en) * 1969-06-19 1973-02-20 Shibaura Electric Co Ltd Method of manufacturing semiconductor devices utilizing ion-implantation and arsenic diffusion
US3886569A (en) * 1970-01-22 1975-05-27 Ibm Simultaneous double diffusion into a semiconductor substrate
NL7116688A (cg-RX-API-DMAC10.html) * 1970-12-09 1972-06-13
US3753807A (en) * 1972-02-24 1973-08-21 Bell Canada Northern Electric Manufacture of bipolar semiconductor devices
US3856578A (en) * 1972-03-13 1974-12-24 Bell Telephone Labor Inc Bipolar transistors and method of manufacture
US3940288A (en) * 1973-05-16 1976-02-24 Fujitsu Limited Method of making a semiconductor device
US3880676A (en) * 1973-10-29 1975-04-29 Rca Corp Method of making a semiconductor device
US4066473A (en) * 1976-07-15 1978-01-03 Fairchild Camera And Instrument Corporation Method of fabricating high-gain transistors
US4115797A (en) * 1976-10-04 1978-09-19 Fairchild Camera And Instrument Corporation Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
US4168999A (en) * 1978-12-26 1979-09-25 Fairchild Camera And Instrument Corporation Method for forming oxide isolated integrated injection logic semiconductor structures having minimal encroachment utilizing special masking techniques

Also Published As

Publication number Publication date
IT1150096B (it) 1986-12-10
CA1160363A (en) 1984-01-10
EP0042380B1 (en) 1986-03-19
EP0042380A1 (en) 1981-12-30
EP0042380A4 (en) 1983-04-18
JPS6410951B2 (cg-RX-API-DMAC10.html) 1989-02-22
IT8026721A0 (it) 1980-12-18
WO1981001911A1 (en) 1981-07-09
JPS56501585A (cg-RX-API-DMAC10.html) 1981-10-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee