DE2964810D1 - A method of coating side walls of semiconductor devices - Google Patents

A method of coating side walls of semiconductor devices

Info

Publication number
DE2964810D1
DE2964810D1 DE7979301493T DE2964810T DE2964810D1 DE 2964810 D1 DE2964810 D1 DE 2964810D1 DE 7979301493 T DE7979301493 T DE 7979301493T DE 2964810 T DE2964810 T DE 2964810T DE 2964810 D1 DE2964810 D1 DE 2964810D1
Authority
DE
Germany
Prior art keywords
side walls
semiconductor devices
coating side
coating
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7979301493T
Other languages
English (en)
Inventor
Hajime Imai
Takao Fujiwara
Masahiro Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP9277778A external-priority patent/JPS5519854A/ja
Priority claimed from JP14883878A external-priority patent/JPS5575281A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE2964810D1 publication Critical patent/DE2964810D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE7979301493T 1978-07-29 1979-07-26 A method of coating side walls of semiconductor devices Expired DE2964810D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9277778A JPS5519854A (en) 1978-07-29 1978-07-29 Formation of protective film
JP14883878A JPS5575281A (en) 1978-12-01 1978-12-01 Manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
DE2964810D1 true DE2964810D1 (en) 1983-03-24

Family

ID=26434155

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7979301493T Expired DE2964810D1 (en) 1978-07-29 1979-07-26 A method of coating side walls of semiconductor devices

Country Status (3)

Country Link
US (2) US4356210A (de)
EP (1) EP0007805B1 (de)
DE (1) DE2964810D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3002194A1 (de) * 1980-01-22 1981-07-23 Berna AG Olten, Olten Vorrichtung zur (teil) beschichtung eines substrates durch kathodenzerstaeubung, vefahren zur beschichtung und deren anwendung
JPS581878A (ja) * 1981-06-26 1983-01-07 Fujitsu Ltd 磁気バブルメモリ素子の製造方法
US4571448A (en) * 1981-11-16 1986-02-18 University Of Delaware Thin film photovoltaic solar cell and method of making the same
US4432132A (en) * 1981-12-07 1984-02-21 Bell Telephone Laboratories, Incorporated Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features
US4471524A (en) * 1982-06-01 1984-09-18 At&T Bell Laboratories Method for manufacturing an insulated gate field effect transistor device
CA1198226A (en) * 1982-06-01 1985-12-17 Eliezer Kinsbron Method for manufacturing a semiconductor device
JP2746289B2 (ja) * 1989-09-09 1998-05-06 忠弘 大見 素子の作製方法並びに半導体素子およびその作製方法
JP2786283B2 (ja) * 1989-12-22 1998-08-13 株式会社日立製作所 表面改質方法およびその装置並びに表面改質基材
AUPN364195A0 (en) * 1995-06-19 1995-07-13 University Of Sydney, The Solar selective surface coating
US5923690A (en) * 1996-01-25 1999-07-13 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device
JP5179068B2 (ja) * 2007-02-14 2013-04-10 昭和電工株式会社 化合物半導体素子の製造方法
TW200837982A (en) * 2007-03-07 2008-09-16 Everlight Electronics Co Ltd Semiconductor light emitting apparatus and the manufacturing method thereof
US7977791B2 (en) * 2007-07-09 2011-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Selective formation of boron-containing metal cap pre-layer
US20160089723A1 (en) * 2010-06-29 2016-03-31 Korea Advanced Institute Of Science And Technology Method of fabricating nanostructures using macro pre-patterns
JP5910064B2 (ja) 2011-12-20 2016-04-27 セイコーエプソン株式会社 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置
CN110120446B (zh) * 2013-10-29 2023-02-28 亮锐控股有限公司 分离发光器件的晶片的方法
EP3358377A4 (de) * 2015-09-30 2019-05-01 Nikon Corporation Optisches element, kammer und lichtquellenvorrichtung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519788A (en) * 1967-01-13 1970-07-07 Ibm Automatic registration of an electron beam
US3764511A (en) * 1972-03-29 1973-10-09 United Aircraft Corp Moated substrate holding pedestal
US3846294A (en) * 1974-01-11 1974-11-05 Rca Corp Method of coating the interior walls of through-holes
US3945902A (en) * 1974-07-22 1976-03-23 Rca Corporation Metallized device and method of fabrication
DE2526382C3 (de) * 1975-06-13 1979-10-25 Philips Patentverwaltung Gmbh, 2000 Hamburg Kathodenzerstäubungsverf ahren zur Herstellung geätzter Strukturen
US4172907A (en) * 1977-12-29 1979-10-30 Honeywell Information Systems Inc. Method of protecting bumped semiconductor chips

Also Published As

Publication number Publication date
US4435443A (en) 1984-03-06
EP0007805B1 (de) 1983-02-16
EP0007805A1 (de) 1980-02-06
US4356210A (en) 1982-10-26

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: REINLAENDER, C., DIPL.-ING. DR.-ING., PAT.-ANW., 8000 MUENCHEN

8339 Ceased/non-payment of the annual fee