DE2944069A1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE2944069A1
DE2944069A1 DE19792944069 DE2944069A DE2944069A1 DE 2944069 A1 DE2944069 A1 DE 2944069A1 DE 19792944069 DE19792944069 DE 19792944069 DE 2944069 A DE2944069 A DE 2944069A DE 2944069 A1 DE2944069 A1 DE 2944069A1
Authority
DE
Germany
Prior art keywords
emitter
area
areas
metallization
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19792944069
Other languages
German (de)
English (en)
Inventor
Philip L Hower
Derrick J Page
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of DE2944069A1 publication Critical patent/DE2944069A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H10W20/484—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H10W72/00—

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
DE19792944069 1978-11-01 1979-10-31 Halbleiteranordnung Withdrawn DE2944069A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/956,813 US4231059A (en) 1978-11-01 1978-11-01 Technique for controlling emitter ballast resistance

Publications (1)

Publication Number Publication Date
DE2944069A1 true DE2944069A1 (de) 1980-05-14

Family

ID=25498726

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19792944069 Withdrawn DE2944069A1 (de) 1978-11-01 1979-10-31 Halbleiteranordnung

Country Status (9)

Country Link
US (1) US4231059A (enExample)
JP (2) JPS5562766A (enExample)
BE (1) BE879740A (enExample)
BR (1) BR7906974A (enExample)
CA (1) CA1123966A (enExample)
DE (1) DE2944069A1 (enExample)
FR (1) FR2443140A1 (enExample)
GB (1) GB2034116B (enExample)
IN (1) IN151292B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017750C2 (de) * 1980-05-09 1985-03-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor
US4291324A (en) * 1980-06-20 1981-09-22 Rca Corporation Semiconductor power device having second breakdown protection
JPH067592B2 (ja) * 1986-07-14 1994-01-26 株式会社日立製作所 ゲ−トタ−ンオフサイリスタ
FR2625611B1 (fr) * 1987-12-30 1990-05-04 Radiotechnique Compelec Circuit integre presentant un transistor lateral
JPH0712045B2 (ja) * 1988-03-02 1995-02-08 株式会社東海理化電機製作所 電流検出素子
US6064109A (en) * 1992-10-08 2000-05-16 Sgs-Thomson Microelectronics, Inc. Ballast resistance for producing varied emitter current flow along the emitter's injecting edge
EP0592157B1 (en) * 1992-10-08 1998-11-25 STMicroelectronics, Inc. Integrated thin film approach to achieve high ballast levels for overlay structures
US5736755A (en) * 1992-11-09 1998-04-07 Delco Electronics Corporation Vertical PNP power device with different ballastic resistant vertical PNP transistors
CA2229603A1 (en) * 1995-08-16 1997-02-27 Edward Strasser Reducing wear between structural fiber reinforced ceramic matrix composite automotive engine parts in sliding contacting relationship
JP3275912B2 (ja) * 2000-08-08 2002-04-22 松下電器産業株式会社 金属蒸気放電ランプ
US6878999B2 (en) 2003-07-15 2005-04-12 Texas Instruments Incorporated Transistor with improved safe operating area
US6815276B2 (en) 2002-10-03 2004-11-09 Texas Instruments Incorporated Segmented power MOSFET of safe operation
US6946720B2 (en) * 2003-02-13 2005-09-20 Intersil Americas Inc. Bipolar transistor for an integrated circuit having variable value emitter ballast resistors
US20060138597A1 (en) * 2004-12-24 2006-06-29 Johnson David A Combined high reliability contact metal/ ballast resistor/ bypass capacitor structure for power transistors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2029210A1 (de) * 1970-06-13 1971-12-16 Licentia Gmbh Flächentransistor
DE1912931B2 (de) * 1968-04-04 1976-09-09 Fujitsu Ltd., Kawasaki, Kanagawa (Japan) Halbleiterbauelement

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4424427Y1 (enExample) * 1967-01-31 1969-10-15
US4008484A (en) * 1968-04-04 1977-02-15 Fujitsu Ltd. Semiconductor device having multilayered electrode structure
US3878550A (en) * 1972-10-27 1975-04-15 Raytheon Co Microwave power transistor
JPS572753B2 (enExample) * 1973-07-06 1982-01-18
FR2254880B1 (enExample) * 1973-12-12 1978-11-10 Alsthom Cgee
US3895977A (en) * 1973-12-20 1975-07-22 Harris Corp Method of fabricating a bipolar transistor
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
US4060825A (en) * 1976-02-09 1977-11-29 Westinghouse Electric Corporation High speed high power two terminal solid state switch fired by dV/dt

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1912931B2 (de) * 1968-04-04 1976-09-09 Fujitsu Ltd., Kawasaki, Kanagawa (Japan) Halbleiterbauelement
DE2029210A1 (de) * 1970-06-13 1971-12-16 Licentia Gmbh Flächentransistor

Also Published As

Publication number Publication date
FR2443140B1 (enExample) 1984-08-24
IN151292B (enExample) 1983-03-26
GB2034116A (en) 1980-05-29
CA1123966A (en) 1982-05-18
US4231059A (en) 1980-10-28
BR7906974A (pt) 1980-07-22
FR2443140A1 (fr) 1980-06-27
JPS5562766A (en) 1980-05-12
BE879740A (fr) 1980-04-30
GB2034116B (en) 1983-01-12
JPS6292659U (enExample) 1987-06-13

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8130 Withdrawal