FR2443140A1 - Procede pour controler une resistance ballast d'emetteur - Google Patents

Procede pour controler une resistance ballast d'emetteur

Info

Publication number
FR2443140A1
FR2443140A1 FR7926881A FR7926881A FR2443140A1 FR 2443140 A1 FR2443140 A1 FR 2443140A1 FR 7926881 A FR7926881 A FR 7926881A FR 7926881 A FR7926881 A FR 7926881A FR 2443140 A1 FR2443140 A1 FR 2443140A1
Authority
FR
France
Prior art keywords
emitter
transmitter
control
ballast resistor
metallization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7926881A
Other languages
English (en)
French (fr)
Other versions
FR2443140B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2443140A1 publication Critical patent/FR2443140A1/fr
Application granted granted Critical
Publication of FR2443140B1 publication Critical patent/FR2443140B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10W20/484—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H10W72/00—

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
FR7926881A 1978-11-01 1979-10-30 Procede pour controler une resistance ballast d'emetteur Granted FR2443140A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/956,813 US4231059A (en) 1978-11-01 1978-11-01 Technique for controlling emitter ballast resistance

Publications (2)

Publication Number Publication Date
FR2443140A1 true FR2443140A1 (fr) 1980-06-27
FR2443140B1 FR2443140B1 (enExample) 1984-08-24

Family

ID=25498726

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7926881A Granted FR2443140A1 (fr) 1978-11-01 1979-10-30 Procede pour controler une resistance ballast d'emetteur

Country Status (9)

Country Link
US (1) US4231059A (enExample)
JP (2) JPS5562766A (enExample)
BE (1) BE879740A (enExample)
BR (1) BR7906974A (enExample)
CA (1) CA1123966A (enExample)
DE (1) DE2944069A1 (enExample)
FR (1) FR2443140A1 (enExample)
GB (1) GB2034116B (enExample)
IN (1) IN151292B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017750C2 (de) * 1980-05-09 1985-03-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor
US4291324A (en) * 1980-06-20 1981-09-22 Rca Corporation Semiconductor power device having second breakdown protection
JPH067592B2 (ja) * 1986-07-14 1994-01-26 株式会社日立製作所 ゲ−トタ−ンオフサイリスタ
FR2625611B1 (fr) * 1987-12-30 1990-05-04 Radiotechnique Compelec Circuit integre presentant un transistor lateral
JPH0712045B2 (ja) * 1988-03-02 1995-02-08 株式会社東海理化電機製作所 電流検出素子
US6064109A (en) * 1992-10-08 2000-05-16 Sgs-Thomson Microelectronics, Inc. Ballast resistance for producing varied emitter current flow along the emitter's injecting edge
EP0592157B1 (en) * 1992-10-08 1998-11-25 STMicroelectronics, Inc. Integrated thin film approach to achieve high ballast levels for overlay structures
US5736755A (en) * 1992-11-09 1998-04-07 Delco Electronics Corporation Vertical PNP power device with different ballastic resistant vertical PNP transistors
CA2229603A1 (en) * 1995-08-16 1997-02-27 Edward Strasser Reducing wear between structural fiber reinforced ceramic matrix composite automotive engine parts in sliding contacting relationship
JP3275912B2 (ja) * 2000-08-08 2002-04-22 松下電器産業株式会社 金属蒸気放電ランプ
US6878999B2 (en) 2003-07-15 2005-04-12 Texas Instruments Incorporated Transistor with improved safe operating area
US6815276B2 (en) 2002-10-03 2004-11-09 Texas Instruments Incorporated Segmented power MOSFET of safe operation
US6946720B2 (en) * 2003-02-13 2005-09-20 Intersil Americas Inc. Bipolar transistor for an integrated circuit having variable value emitter ballast resistors
US20060138597A1 (en) * 2004-12-24 2006-06-29 Johnson David A Combined high reliability contact metal/ ballast resistor/ bypass capacitor structure for power transistors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1803779A1 (de) * 1968-09-30 1970-06-04 Philips Nv Transistor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4424427Y1 (enExample) * 1967-01-31 1969-10-15
US4008484A (en) * 1968-04-04 1977-02-15 Fujitsu Ltd. Semiconductor device having multilayered electrode structure
JPS5025306B1 (enExample) * 1968-04-04 1975-08-22
DE2029210A1 (de) * 1970-06-13 1971-12-16 Licentia Gmbh Flächentransistor
US3878550A (en) * 1972-10-27 1975-04-15 Raytheon Co Microwave power transistor
JPS572753B2 (enExample) * 1973-07-06 1982-01-18
FR2254880B1 (enExample) * 1973-12-12 1978-11-10 Alsthom Cgee
US3895977A (en) * 1973-12-20 1975-07-22 Harris Corp Method of fabricating a bipolar transistor
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
US4060825A (en) * 1976-02-09 1977-11-29 Westinghouse Electric Corporation High speed high power two terminal solid state switch fired by dV/dt

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1803779A1 (de) * 1968-09-30 1970-06-04 Philips Nv Transistor

Also Published As

Publication number Publication date
FR2443140B1 (enExample) 1984-08-24
IN151292B (enExample) 1983-03-26
GB2034116A (en) 1980-05-29
CA1123966A (en) 1982-05-18
US4231059A (en) 1980-10-28
BR7906974A (pt) 1980-07-22
DE2944069A1 (de) 1980-05-14
JPS5562766A (en) 1980-05-12
BE879740A (fr) 1980-04-30
GB2034116B (en) 1983-01-12
JPS6292659U (enExample) 1987-06-13

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Legal Events

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