DE2931649A1 - Lichtaktivierter halbleiterschalter - Google Patents
Lichtaktivierter halbleiterschalterInfo
- Publication number
- DE2931649A1 DE2931649A1 DE19792931649 DE2931649A DE2931649A1 DE 2931649 A1 DE2931649 A1 DE 2931649A1 DE 19792931649 DE19792931649 DE 19792931649 DE 2931649 A DE2931649 A DE 2931649A DE 2931649 A1 DE2931649 A1 DE 2931649A1
- Authority
- DE
- Germany
- Prior art keywords
- light
- cathode
- semiconductor switch
- switch according
- core
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 52
- 239000010703 silicon Substances 0.000 claims description 52
- 239000013307 optical fiber Substances 0.000 claims description 37
- 230000003287 optical effect Effects 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 13
- 238000005253 cladding Methods 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 4
- 239000005308 flint glass Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 51
- 235000012431 wafers Nutrition 0.000 description 38
- 229910052751 metal Inorganic materials 0.000 description 34
- 239000002184 metal Substances 0.000 description 33
- 239000000835 fiber Substances 0.000 description 19
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 238000007496 glass forming Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 241000251730 Chondrichthyes Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Couplings Of Light Guides (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/930,762 US4301462A (en) | 1978-08-03 | 1978-08-03 | Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber |
| US05/932,992 US4186409A (en) | 1978-08-11 | 1978-08-11 | Light activated silicon switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2931649A1 true DE2931649A1 (de) | 1980-02-21 |
| DE2931649C2 DE2931649C2 (US20030032738A1-20030213-C00007.png) | 1991-02-14 |
Family
ID=27129997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19792931649 Granted DE2931649A1 (de) | 1978-08-03 | 1979-08-03 | Lichtaktivierter halbleiterschalter |
Country Status (5)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3245278A1 (de) * | 1981-12-07 | 1983-07-14 | Mitsubishi Denki K.K., Tokyo | Lichtgetriggerter thyristor |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2127220B (en) * | 1982-08-31 | 1986-04-23 | Tokyo Shibaura Electric Co | Light-triggered semiconductor device and light guide thereto |
| DE4300765C1 (de) * | 1993-01-14 | 1993-12-23 | Bosch Gmbh Robert | Verfahren zum Planarisieren grabenförmiger Strukturen |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1254634A (en) * | 1968-04-26 | 1971-11-24 | Asea Ab | Improved thyristor arrangement |
| DE2320459A1 (de) * | 1972-04-28 | 1973-11-15 | Westinghouse Electric Corp | Auf strahlung ansprechende anordnung mit einem durch licht aktivierten schaltelement |
| CH611741A5 (US20030032738A1-20030213-C00007.png) * | 1975-11-03 | 1979-06-15 | Gen Electric | |
| FR2426271A1 (fr) * | 1978-05-18 | 1979-12-14 | Thomson Csf | Procede d'assemblage precis de " lasers " a semi-conducteur et de fibres optiques |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2226754B1 (US20030032738A1-20030213-C00007.png) * | 1973-04-20 | 1975-08-22 | Thomson Csf | |
| FR2253277B1 (US20030032738A1-20030213-C00007.png) * | 1973-11-30 | 1977-08-12 | Silec Semi Conducteurs | |
| JPS583386B2 (ja) * | 1975-10-11 | 1983-01-21 | 株式会社日立製作所 | ソウホウコウセイホトサイリスタ |
-
1979
- 1979-07-20 IN IN746/CAL/79A patent/IN152332B/en unknown
- 1979-07-27 BR BR7904830A patent/BR7904830A/pt unknown
- 1979-08-02 FR FR7919839A patent/FR2432771A1/fr active Granted
- 1979-08-03 GB GB7927174A patent/GB2027991B/en not_active Expired
- 1979-08-03 DE DE19792931649 patent/DE2931649A1/de active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1254634A (en) * | 1968-04-26 | 1971-11-24 | Asea Ab | Improved thyristor arrangement |
| DE2320459A1 (de) * | 1972-04-28 | 1973-11-15 | Westinghouse Electric Corp | Auf strahlung ansprechende anordnung mit einem durch licht aktivierten schaltelement |
| CH611741A5 (US20030032738A1-20030213-C00007.png) * | 1975-11-03 | 1979-06-15 | Gen Electric | |
| FR2426271A1 (fr) * | 1978-05-18 | 1979-12-14 | Thomson Csf | Procede d'assemblage precis de " lasers " a semi-conducteur et de fibres optiques |
Non-Patent Citations (1)
| Title |
|---|
| Meyer's Enzyklopädisches Lexikon,BibliographischesInstitut,Mannheim 1974,Stichwort "Glasfaseroptik" * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3245278A1 (de) * | 1981-12-07 | 1983-07-14 | Mitsubishi Denki K.K., Tokyo | Lichtgetriggerter thyristor |
| DE3245278C2 (US20030032738A1-20030213-C00007.png) * | 1981-12-07 | 1990-03-29 | Mitsubishi Denki K.K., Tokio/Tokyo, Jp |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2432771A1 (fr) | 1980-02-29 |
| BR7904830A (pt) | 1980-04-29 |
| IN152332B (US20030032738A1-20030213-C00007.png) | 1983-12-24 |
| GB2027991A (en) | 1980-02-27 |
| FR2432771B1 (US20030032738A1-20030213-C00007.png) | 1985-04-12 |
| DE2931649C2 (US20030032738A1-20030213-C00007.png) | 1991-02-14 |
| GB2027991B (en) | 1983-04-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |