DE2906290C2 - Vorrichtung zum Abscheiden von Halbleitermaterial - Google Patents

Vorrichtung zum Abscheiden von Halbleitermaterial

Info

Publication number
DE2906290C2
DE2906290C2 DE2906290A DE2906290A DE2906290C2 DE 2906290 C2 DE2906290 C2 DE 2906290C2 DE 2906290 A DE2906290 A DE 2906290A DE 2906290 A DE2906290 A DE 2906290A DE 2906290 C2 DE2906290 C2 DE 2906290C2
Authority
DE
Germany
Prior art keywords
base plate
cooling
bores
annular groove
systems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2906290A
Other languages
German (de)
English (en)
Other versions
DE2906290A1 (de
Inventor
Gerhard Ing.(grad.) 8000 München Barowski
Wolfgang Dr. Dietze
Ulrich Rucha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE2906290A priority Critical patent/DE2906290C2/de
Priority to JP1894780A priority patent/JPS55117230A/ja
Publication of DE2906290A1 publication Critical patent/DE2906290A1/de
Application granted granted Critical
Publication of DE2906290C2 publication Critical patent/DE2906290C2/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
DE2906290A 1979-02-19 1979-02-19 Vorrichtung zum Abscheiden von Halbleitermaterial Expired DE2906290C2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE2906290A DE2906290C2 (de) 1979-02-19 1979-02-19 Vorrichtung zum Abscheiden von Halbleitermaterial
JP1894780A JPS55117230A (en) 1979-02-19 1980-02-18 Semiconductor material precipitating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2906290A DE2906290C2 (de) 1979-02-19 1979-02-19 Vorrichtung zum Abscheiden von Halbleitermaterial

Publications (2)

Publication Number Publication Date
DE2906290A1 DE2906290A1 (de) 1980-08-28
DE2906290C2 true DE2906290C2 (de) 1987-02-19

Family

ID=6063290

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2906290A Expired DE2906290C2 (de) 1979-02-19 1979-02-19 Vorrichtung zum Abscheiden von Halbleitermaterial

Country Status (2)

Country Link
JP (1) JPS55117230A (enExample)
DE (1) DE2906290C2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3107260A1 (de) * 1981-02-26 1982-09-09 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum abscheiden von halbleitermaterial, insbesondere silicium
DE3142586A1 (de) * 1981-10-27 1983-05-11 Siemens AG, 1000 Berlin und 8000 München Vorrichtung fuer die hochtemperaturbehandlung von aus silizium, metall und metall/silizium bestehenden, auf substraten aufgebrachten schichten in extrem trockener gasatmosphaere
KR101632236B1 (ko) * 2011-07-20 2016-06-21 헴로크세미컨덕터코포레이션 캐리어 몸체 상에 재료를 침착시키기 위한 제조 장치
CN104724709A (zh) * 2015-03-27 2015-06-24 中国恩菲工程技术有限公司 用于多晶硅还原炉的底盘组件
CN104692390A (zh) * 2015-03-27 2015-06-10 中国恩菲工程技术有限公司 用于多晶硅还原炉的底盘组件

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2826860C2 (de) * 1978-06-19 1987-04-16 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Abscheiden von Halbleitermaterial

Also Published As

Publication number Publication date
DE2906290A1 (de) 1980-08-28
JPS6341211B2 (enExample) 1988-08-16
JPS55117230A (en) 1980-09-09

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8120 Willingness to grant licences paragraph 23
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee