DE2861075D1 - Process for the removal of silicon dioxide residue from a semiconductor surface - Google Patents

Process for the removal of silicon dioxide residue from a semiconductor surface

Info

Publication number
DE2861075D1
DE2861075D1 DE7878100336T DE2861075T DE2861075D1 DE 2861075 D1 DE2861075 D1 DE 2861075D1 DE 7878100336 T DE7878100336 T DE 7878100336T DE 2861075 T DE2861075 T DE 2861075T DE 2861075 D1 DE2861075 D1 DE 2861075D1
Authority
DE
Germany
Prior art keywords
removal
silicon dioxide
semiconductor surface
dioxide residue
residue
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7878100336T
Other languages
German (de)
English (en)
Inventor
Jagtar Singh Basi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE2861075D1 publication Critical patent/DE2861075D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
DE7878100336T 1977-08-15 1978-07-10 Process for the removal of silicon dioxide residue from a semiconductor surface Expired DE2861075D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/824,382 US4116714A (en) 1977-08-15 1977-08-15 Post-polishing semiconductor surface cleaning process

Publications (1)

Publication Number Publication Date
DE2861075D1 true DE2861075D1 (en) 1981-12-03

Family

ID=25241258

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7878100336T Expired DE2861075D1 (en) 1977-08-15 1978-07-10 Process for the removal of silicon dioxide residue from a semiconductor surface

Country Status (4)

Country Link
US (1) US4116714A (https=)
EP (1) EP0000701B1 (https=)
JP (1) JPS5432262A (https=)
DE (1) DE2861075D1 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4713119A (en) * 1986-03-20 1987-12-15 Stauffer Chemical Company Process for removing alkali metal aluminum silicate scale deposits from surfaces of chemical process equipment
US4828660A (en) * 1986-10-06 1989-05-09 Athens Corporation Method and apparatus for the continuous on-site chemical reprocessing of ultrapure liquids
US5320706A (en) * 1991-10-15 1994-06-14 Texas Instruments Incorporated Removing slurry residue from semiconductor wafer planarization
DE69217838T2 (de) * 1991-11-19 1997-08-21 Philips Electronics Nv Herstellungsverfahren für eine Halbleitervorrichtung mit durch eine Aluminiumverbindung seitlich voneinander isolierten Aluminiumspuren
US5209816A (en) * 1992-06-04 1993-05-11 Micron Technology, Inc. Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing
US5389194A (en) * 1993-02-05 1995-02-14 Lsi Logic Corporation Methods of cleaning semiconductor substrates after polishing
JP3326642B2 (ja) * 1993-11-09 2002-09-24 ソニー株式会社 基板の研磨後処理方法およびこれに用いる研磨装置
JP2570166B2 (ja) * 1994-04-22 1997-01-08 日本電気株式会社 半導体装置の製造方法
US5853491A (en) * 1994-06-27 1998-12-29 Siemens Aktiengesellschaft Method for reducing metal contamination of silicon wafers during semiconductor manufacturing
US5637151A (en) * 1994-06-27 1997-06-10 Siemens Components, Inc. Method for reducing metal contamination of silicon wafers during semiconductor manufacturing
US5597443A (en) * 1994-08-31 1997-01-28 Texas Instruments Incorporated Method and system for chemical mechanical polishing of semiconductor wafer
JP3119289B2 (ja) * 1994-10-21 2000-12-18 信越半導体株式会社 半導体ウェーハの洗浄方法
US5571041A (en) * 1995-04-21 1996-11-05 Leikam; Josh K. Refinishing compact disks
US5693148A (en) * 1995-11-08 1997-12-02 Ontrak Systems, Incorporated Process for brush cleaning
US5896870A (en) * 1997-03-11 1999-04-27 International Business Machines Corporation Method of removing slurry particles
US5837662A (en) * 1997-12-12 1998-11-17 Memc Electronic Materials, Inc. Post-lapping cleaning process for silicon wafers
US6087191A (en) * 1998-01-22 2000-07-11 International Business Machines Corporation Method for repairing surface defects
JP3701126B2 (ja) * 1998-09-01 2005-09-28 株式会社荏原製作所 基板の洗浄方法及び研磨装置
TW200419687A (en) * 2003-03-31 2004-10-01 Powerchip Semiconductor Corp Ion sampling system for wafer and method thereof
JP2007519222A (ja) * 2003-07-11 2007-07-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体デバイスを製造する方法およびその方法で使用するための装置
US7193295B2 (en) * 2004-08-20 2007-03-20 Semitool, Inc. Process and apparatus for thinning a semiconductor workpiece
US10325779B2 (en) 2016-03-30 2019-06-18 Tokyo Electron Limited Colloidal silica growth inhibitor and associated method and system
US10515820B2 (en) * 2016-03-30 2019-12-24 Tokyo Electron Limited Process and apparatus for processing a nitride structure without silica deposition
KR20220149666A (ko) 2020-02-28 2022-11-08 닛뽄 가야쿠 가부시키가이샤 축합 다환 방향족 화합물
CN117153666A (zh) * 2023-08-18 2023-12-01 广东先导微电子科技有限公司 一种碲锌镉晶片的清洗工艺

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE966879C (de) * 1953-02-21 1957-09-12 Standard Elektrik Ag Verfahren zur Reinigung und/oder Abtragung von Halbleitermaterial, insbesondere von Germanium- und Siliziumsubstanz
FR1335652A (fr) * 1962-07-13 1963-08-23 Agent de nettoyage de surfaces métalliques rouillées ou recouvertes de calamine
DE1614103A1 (de) * 1967-12-06 1970-05-06 Licentia Gmbh Verfahren zur Stabilisierung diffundierter Siliciumgleichrichterschreiben
US3728267A (en) * 1970-01-14 1973-04-17 Mitsubishi Heavy Ind Ltd Peeling type pickling compositions
US3728154A (en) * 1970-09-14 1973-04-17 Maagdenberg R Semiconductor wafer cleaning
US3715249A (en) * 1971-09-03 1973-02-06 Bell Telephone Labor Inc Etching si3n4
GB1423448A (en) * 1973-07-18 1976-02-04 Plessey Co Ltd Method of selectively etching silicon nitride
US4050954A (en) * 1976-03-25 1977-09-27 International Business Machines Corporation Surface treatment of semiconductor substrates

Also Published As

Publication number Publication date
EP0000701A2 (de) 1979-02-21
JPS5432262A (en) 1979-03-09
US4116714A (en) 1978-09-26
EP0000701B1 (de) 1981-09-16
EP0000701A3 (en) 1979-03-07
JPS6214938B2 (https=) 1987-04-04

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee