DE2834006A1 - Halbleiterlaser - Google Patents

Halbleiterlaser

Info

Publication number
DE2834006A1
DE2834006A1 DE19782834006 DE2834006A DE2834006A1 DE 2834006 A1 DE2834006 A1 DE 2834006A1 DE 19782834006 DE19782834006 DE 19782834006 DE 2834006 A DE2834006 A DE 2834006A DE 2834006 A1 DE2834006 A1 DE 2834006A1
Authority
DE
Germany
Prior art keywords
type
area
semiconductor laser
junction
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19782834006
Other languages
German (de)
English (en)
Inventor
Bert L Frescura
Paul E Greene
Hermann Luechinger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of DE2834006A1 publication Critical patent/DE2834006A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE19782834006 1977-08-16 1978-08-03 Halbleiterlaser Withdrawn DE2834006A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82501977A 1977-08-16 1977-08-16

Publications (1)

Publication Number Publication Date
DE2834006A1 true DE2834006A1 (de) 1979-03-01

Family

ID=25242921

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782834006 Withdrawn DE2834006A1 (de) 1977-08-16 1978-08-03 Halbleiterlaser

Country Status (3)

Country Link
JP (1) JPS5435869U (enExample)
DE (1) DE2834006A1 (enExample)
GB (1) GB1574592A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4872180A (en) * 1989-06-16 1989-10-03 Gte Laboratories Incorporated Method for reducing facet reflectivities of semiconductor light sources and device thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51100687A (ja) * 1975-03-03 1976-09-06 Nippon Electric Co Nijuheterosetsugoreeza

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4872180A (en) * 1989-06-16 1989-10-03 Gte Laboratories Incorporated Method for reducing facet reflectivities of semiconductor light sources and device thereof

Also Published As

Publication number Publication date
JPS5435869U (enExample) 1979-03-08
GB1574592A (en) 1980-09-10

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee