GB1574592A - Off-axis alignment of stripe in heterostructure injection lasers - Google Patents
Off-axis alignment of stripe in heterostructure injection lasers Download PDFInfo
- Publication number
- GB1574592A GB1574592A GB1495378A GB1495378A GB1574592A GB 1574592 A GB1574592 A GB 1574592A GB 1495378 A GB1495378 A GB 1495378A GB 1495378 A GB1495378 A GB 1495378A GB 1574592 A GB1574592 A GB 1574592A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- stripe
- type
- laser
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002347 injection Methods 0.000 title claims description 8
- 239000007924 injection Substances 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 13
- 230000004907 flux Effects 0.000 claims description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 11
- 230000005855 radiation Effects 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 5
- 238000005215 recombination Methods 0.000 claims description 5
- 230000006798 recombination Effects 0.000 claims description 5
- 239000002800 charge carrier Substances 0.000 claims description 4
- 239000000969 carrier Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US82501977A | 1977-08-16 | 1977-08-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1574592A true GB1574592A (en) | 1980-09-10 |
Family
ID=25242921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1495378A Expired GB1574592A (en) | 1977-08-16 | 1978-04-17 | Off-axis alignment of stripe in heterostructure injection lasers |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5435869U (enExample) |
| DE (1) | DE2834006A1 (enExample) |
| GB (1) | GB1574592A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4872180A (en) * | 1989-06-16 | 1989-10-03 | Gte Laboratories Incorporated | Method for reducing facet reflectivities of semiconductor light sources and device thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51100687A (ja) * | 1975-03-03 | 1976-09-06 | Nippon Electric Co | Nijuheterosetsugoreeza |
-
1978
- 1978-04-17 GB GB1495378A patent/GB1574592A/en not_active Expired
- 1978-08-03 DE DE19782834006 patent/DE2834006A1/de not_active Withdrawn
- 1978-08-11 JP JP11041878U patent/JPS5435869U/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2834006A1 (de) | 1979-03-01 |
| JPS5435869U (enExample) | 1979-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |