DE2802173C3 - Halbleiterlaseranordnung - Google Patents

Halbleiterlaseranordnung

Info

Publication number
DE2802173C3
DE2802173C3 DE2802173A DE2802173A DE2802173C3 DE 2802173 C3 DE2802173 C3 DE 2802173C3 DE 2802173 A DE2802173 A DE 2802173A DE 2802173 A DE2802173 A DE 2802173A DE 2802173 C3 DE2802173 C3 DE 2802173C3
Authority
DE
Germany
Prior art keywords
layer
strip
laser
laser arrangement
arrangement according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2802173A
Other languages
German (de)
English (en)
Other versions
DE2802173A1 (de
DE2802173B2 (de
Inventor
Nobuo Tokorozawa Saitama Matsumoto (Japan)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE2802173A1 publication Critical patent/DE2802173A1/de
Publication of DE2802173B2 publication Critical patent/DE2802173B2/de
Application granted granted Critical
Publication of DE2802173C3 publication Critical patent/DE2802173C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE2802173A 1977-01-21 1978-01-19 Halbleiterlaseranordnung Expired DE2802173C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP500877A JPS5390890A (en) 1977-01-21 1977-01-21 Semiconductor laser device

Publications (3)

Publication Number Publication Date
DE2802173A1 DE2802173A1 (de) 1978-07-27
DE2802173B2 DE2802173B2 (de) 1980-03-13
DE2802173C3 true DE2802173C3 (de) 1980-11-13

Family

ID=11599511

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2802173A Expired DE2802173C3 (de) 1977-01-21 1978-01-19 Halbleiterlaseranordnung

Country Status (5)

Country Link
US (1) US4163976A (US07642317-20100105-C00010.png)
JP (1) JPS5390890A (US07642317-20100105-C00010.png)
DE (1) DE2802173C3 (US07642317-20100105-C00010.png)
FR (1) FR2378385A1 (US07642317-20100105-C00010.png)
GB (1) GB1593212A (US07642317-20100105-C00010.png)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4251780A (en) * 1978-07-03 1981-02-17 Xerox Corporation Stripe offset geometry in injection lasers to achieve transverse mode control
US4464762A (en) * 1982-02-22 1984-08-07 Bell Telephone Laboratories, Incorporated Monolithically integrated distributed Bragg reflector laser
DE3332398A1 (de) * 1983-09-08 1985-03-28 Standard Elektrik Lorenz Ag, 7000 Stuttgart Multimodenlaser
JPS62144378A (ja) * 1985-12-18 1987-06-27 Sony Corp 分布帰還覆半導体レ−ザ−
JP2007251064A (ja) * 2006-03-17 2007-09-27 Toyota Central Res & Dev Lab Inc 半導体レーザー装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device

Also Published As

Publication number Publication date
JPS5628392B2 (US07642317-20100105-C00010.png) 1981-07-01
DE2802173A1 (de) 1978-07-27
FR2378385B1 (US07642317-20100105-C00010.png) 1981-09-04
GB1593212A (en) 1981-07-15
US4163976A (en) 1979-08-07
DE2802173B2 (de) 1980-03-13
FR2378385A1 (fr) 1978-08-18
JPS5390890A (en) 1978-08-10

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
C3 Grant after two publication steps (3rd publication)
8327 Change in the person/name/address of the patent owner

Owner name: NIPPON TELEGRAPH AND TELEPHONE CORP., TOKIO/TOKYO,

8328 Change in the person/name/address of the agent

Free format text: PRINZ, E., DIPL.-ING. LEISER, G., DIPL.-ING. SCHWEPFINGER, K., DIPL.-ING. BUNKE, H., DIPL.-CHEM. DR.RER.NAT. DEGWERT, H., DIPL.-PHYS., PAT.-ANW., 8000 MUENCHEN

8339 Ceased/non-payment of the annual fee