DE2755399C2 - - Google Patents

Info

Publication number
DE2755399C2
DE2755399C2 DE19772755399 DE2755399A DE2755399C2 DE 2755399 C2 DE2755399 C2 DE 2755399C2 DE 19772755399 DE19772755399 DE 19772755399 DE 2755399 A DE2755399 A DE 2755399A DE 2755399 C2 DE2755399 C2 DE 2755399C2
Authority
DE
Germany
Prior art keywords
exposure
electrons
compensation
gaussian
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19772755399
Other languages
German (de)
English (en)
Other versions
DE2755399A1 (de
Inventor
Ernst Prof. Dr.Rer.Nat. 5900 Siegen De Froeschle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of DE2755399A1 publication Critical patent/DE2755399A1/de
Application granted granted Critical
Publication of DE2755399C2 publication Critical patent/DE2755399C2/de
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H01J2237/31771—Proximity effect correction using multiple exposure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
DE19772755399 1976-12-14 1977-12-13 Elektronenstrahlbelichtungsverfahren mit kompensation des proximityeffekts Granted DE2755399A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75057676A 1976-12-14 1976-12-14

Publications (2)

Publication Number Publication Date
DE2755399A1 DE2755399A1 (de) 1978-06-22
DE2755399C2 true DE2755399C2 (enrdf_load_stackoverflow) 1988-01-07

Family

ID=25018417

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772755399 Granted DE2755399A1 (de) 1976-12-14 1977-12-13 Elektronenstrahlbelichtungsverfahren mit kompensation des proximityeffekts

Country Status (1)

Country Link
DE (1) DE2755399A1 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3916329A1 (de) * 1988-09-16 1990-03-22 Samsung Electronics Co Ltd Verfahren zur bildung des kleinstkontaktes bei halbleiter-vorrichtungen
DE102008053180A1 (de) * 2008-10-24 2010-05-20 Advanced Mask Technology Center Gmbh & Co. Kg Teilchenstrahlschreibverfahren, Teilchenstrahlschreibvorrichtung und Wartungsverfahren für selbige

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4463265A (en) * 1982-06-17 1984-07-31 Hewlett-Packard Company Electron beam proximity effect correction by reverse field pattern exposure
EP0166004B1 (en) * 1984-05-30 1988-11-30 International Business Machines Corporation Proximity effect correction method for e-beam lithography
DE3583423D1 (de) * 1984-10-09 1991-08-14 Toshiba Kawasaki Kk Verfahren zur erzeugung eines gewuenschten musters auf einem ziel mittels elektronenstrahlbelichtung desselben.
DE3571290D1 (en) * 1984-11-22 1989-08-03 Toshiba Machine Co Ltd A system for continuously exposing desired patterns and their backgrounds on a target surface
US5278419A (en) * 1991-08-08 1994-01-11 Fujitsu Limited Electron beam exposure process for writing a pattern on an object by an electron beam with a compensation of the proximity effect

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3956635A (en) * 1975-06-13 1976-05-11 International Business Machines Corporation Combined multiple beam size and spiral scan method for electron beam writing of microcircuit patterns

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3916329A1 (de) * 1988-09-16 1990-03-22 Samsung Electronics Co Ltd Verfahren zur bildung des kleinstkontaktes bei halbleiter-vorrichtungen
DE102008053180A1 (de) * 2008-10-24 2010-05-20 Advanced Mask Technology Center Gmbh & Co. Kg Teilchenstrahlschreibverfahren, Teilchenstrahlschreibvorrichtung und Wartungsverfahren für selbige
DE102008053180B4 (de) * 2008-10-24 2012-07-12 Advanced Mask Technology Center Gmbh & Co. Kg Teilchenstrahlschreibverfahren, Teilchenstrahlschreibvorrichtung und Wartungsverfahren für selbige
US8257888B2 (en) 2008-10-24 2012-09-04 Advanced Mask Technology Center GmbH + Co. KG Particle beam writing method, particle beam writing apparatus and maintenance method for same

Also Published As

Publication number Publication date
DE2755399A1 (de) 1978-06-22

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee