DE2711293A1 - Diodenlaser - Google Patents
DiodenlaserInfo
- Publication number
- DE2711293A1 DE2711293A1 DE19772711293 DE2711293A DE2711293A1 DE 2711293 A1 DE2711293 A1 DE 2711293A1 DE 19772711293 DE19772711293 DE 19772711293 DE 2711293 A DE2711293 A DE 2711293A DE 2711293 A1 DE2711293 A1 DE 2711293A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- active area
- laser
- laser according
- natural oscillation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000000463 material Substances 0.000 claims description 32
- 230000010355 oscillation Effects 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 12
- 230000005855 radiation Effects 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000010521 absorption reaction Methods 0.000 claims description 7
- 230000006798 recombination Effects 0.000 claims description 4
- 238000005215 recombination Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000006117 anti-reflective coating Substances 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 36
- 239000000203 mixture Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000009795 derivation Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000009699 differential effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/674,692 US4063189A (en) | 1976-04-08 | 1976-04-08 | Leaky wave diode laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2711293A1 true DE2711293A1 (de) | 1977-10-27 |
Family
ID=24707564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772711293 Ceased DE2711293A1 (de) | 1976-04-08 | 1977-03-15 | Diodenlaser |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4063189A (enExample) |
| JP (1) | JPS5931997B2 (enExample) |
| CA (1) | CA1071744A (enExample) |
| DE (1) | DE2711293A1 (enExample) |
| FR (1) | FR2347802A1 (enExample) |
| GB (1) | GB1549461A (enExample) |
| NL (1) | NL7703815A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0280459A1 (en) * | 1987-02-16 | 1988-08-31 | Sharp Kabushiki Kaisha | A scanning apparatus |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1137605A (en) * | 1979-01-15 | 1982-12-14 | Donald R. Scifres | High output power laser |
| JPS57130490A (en) * | 1981-02-06 | 1982-08-12 | Hitachi Ltd | Semiconductor laser device |
| US4438446A (en) * | 1981-05-29 | 1984-03-20 | Bell Telephone Laboratories, Incorporated | Double barrier double heterostructure laser |
| JPS57198680A (en) * | 1981-05-30 | 1982-12-06 | Fujitsu Ltd | Optical semiconductor device |
| FR2525034A1 (fr) * | 1982-04-09 | 1983-10-14 | Carenco Alain | Laser a semiconducteur a coupleur directif permettant une sortie laterale |
| CA1267716A (en) * | 1984-02-23 | 1990-04-10 | Frederick W. Scholl | Edge-emitting light emitting diode |
| JPS61131996U (enExample) * | 1985-02-06 | 1986-08-18 | ||
| JPS61144077U (enExample) * | 1985-02-26 | 1986-09-05 | ||
| JPS6328678U (enExample) * | 1986-03-12 | 1988-02-25 | ||
| JPS62159317U (enExample) * | 1986-03-26 | 1987-10-09 | ||
| US4751707A (en) * | 1986-07-03 | 1988-06-14 | Mcdonnell Douglas Corporation | Laser diode array exhibiting transverse lasing |
| JPH01126963U (enExample) * | 1988-02-16 | 1989-08-30 | ||
| US5101413A (en) * | 1991-05-10 | 1992-03-31 | Trw Inc. | Large-aperture light sources using resonant leaky-wave coupling |
| US5349602A (en) * | 1993-03-15 | 1994-09-20 | Sdl, Inc. | Broad-area MOPA device with leaky waveguide beam expander |
| US6996150B1 (en) | 1994-09-14 | 2006-02-07 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
| RU2133534C1 (ru) * | 1997-08-08 | 1999-07-20 | Государственное предприятие Научно-исследовательский институт "Полюс" | Инжекционный лазер |
| RU2134007C1 (ru) * | 1998-03-12 | 1999-07-27 | Государственное предприятие Научно-исследовательский институт "Полюс" | Полупроводниковый оптический усилитель |
| RU2142665C1 (ru) * | 1998-08-10 | 1999-12-10 | Швейкин Василий Иванович | Инжекционный лазер |
| AU762566B2 (en) * | 1998-08-10 | 2003-06-26 | D-Led Corporation | Injection laser |
| RU2197048C1 (ru) * | 2002-02-18 | 2003-01-20 | Швейкин Василий Иванович | Инжекционный лазер |
| RU2197049C1 (ru) * | 2002-02-18 | 2003-01-20 | Швейкин Василий Иванович | Гетероструктура |
| AU2002306409A1 (en) * | 2002-02-18 | 2003-09-09 | Vasily Ivanovich Shveykin | Heterostructure injection laser, semiconductor amplifying element and semiconductor optical amplifier |
| RU2197047C1 (ru) * | 2002-02-18 | 2003-01-20 | Швейкин Василий Иванович | Полупроводниковый усилительный элемент и полупроводниковый оптический усилитель |
| US20030219053A1 (en) * | 2002-05-21 | 2003-11-27 | The Board Of Trustees Of The University Of Illinois | Index guided laser structure |
| CN1778022A (zh) * | 2003-02-19 | 2006-05-24 | Pbc激光有限公司 | 频率转换装置及方法 |
| RU2278455C1 (ru) | 2004-11-17 | 2006-06-20 | Василий Иванович Швейкин | Гетероструктура, инжекционный лазер, полупроводниковый усилительный элемент и полупроводниковый оптический усилитель |
| RU2391756C2 (ru) * | 2008-06-06 | 2010-06-10 | Василий Иванович Швейкин | Диодный лазер, интегральный диодный лазер и интегральный полупроводниковый оптический усилитель |
| RU2396655C1 (ru) * | 2009-05-06 | 2010-08-10 | Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН | Туннельно-связанная полупроводниковая гетероструктура |
| RU2419934C2 (ru) | 2009-07-17 | 2011-05-27 | Василий Иванович Швейкин | Диодный источник многолучевого когерентного лазерного излучения (варианты) |
| CN105048283B (zh) * | 2015-07-30 | 2018-06-26 | 中国科学院长春光学精密机械与物理研究所 | 高功率共面电极泄露波激光器 |
| RU2627192C1 (ru) * | 2016-09-07 | 2017-08-03 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского" | Способ получения лазерного излучения с малой расходимостью и диодный лазер для его осуществления |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3806830A (en) * | 1972-02-23 | 1974-04-23 | Nippon Electric Co | Composite semiconductor laser device |
| US3943462A (en) * | 1973-02-06 | 1976-03-09 | International Standard Electric Corporation | Antireflection coatings for injection lasers |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3855607A (en) * | 1973-05-29 | 1974-12-17 | Rca Corp | Semiconductor injection laser with reduced divergence of emitted beam |
-
1976
- 1976-04-08 US US05/674,692 patent/US4063189A/en not_active Expired - Lifetime
-
1977
- 1977-03-07 CA CA273,266A patent/CA1071744A/en not_active Expired
- 1977-03-15 DE DE19772711293 patent/DE2711293A1/de not_active Ceased
- 1977-03-29 GB GB13167/77A patent/GB1549461A/en not_active Expired
- 1977-04-01 JP JP52037470A patent/JPS5931997B2/ja not_active Expired
- 1977-04-06 NL NL7703815A patent/NL7703815A/xx not_active Application Discontinuation
- 1977-04-08 FR FR7710858A patent/FR2347802A1/fr active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3806830A (en) * | 1972-02-23 | 1974-04-23 | Nippon Electric Co | Composite semiconductor laser device |
| US3943462A (en) * | 1973-02-06 | 1976-03-09 | International Standard Electric Corporation | Antireflection coatings for injection lasers |
Non-Patent Citations (2)
| Title |
|---|
| IEEE J. Quant. Electron. Vol. QE-12, Nr. 3, 1976, S. 177-182 * |
| IEEE J. Quant. Electron., Vol. QE-11, Nr. 7, 1975, S. 402-407 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0280459A1 (en) * | 1987-02-16 | 1988-08-31 | Sharp Kabushiki Kaisha | A scanning apparatus |
| US4939737A (en) * | 1987-02-16 | 1990-07-03 | Sharp Kabushiki Kaisha | Scanning apparatus with refracting area of variable refractive index |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2347802B1 (enExample) | 1983-05-13 |
| FR2347802A1 (fr) | 1977-11-04 |
| JPS52123881A (en) | 1977-10-18 |
| US4063189A (en) | 1977-12-13 |
| JPS5931997B2 (ja) | 1984-08-06 |
| NL7703815A (nl) | 1977-10-11 |
| CA1071744A (en) | 1980-02-12 |
| GB1549461A (en) | 1979-08-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8131 | Rejection |