DE2657484C2 - Aufladeelektrodenanordnung für Tintenstrahldrucker - Google Patents
Aufladeelektrodenanordnung für TintenstrahldruckerInfo
- Publication number
- DE2657484C2 DE2657484C2 DE2657484A DE2657484A DE2657484C2 DE 2657484 C2 DE2657484 C2 DE 2657484C2 DE 2657484 A DE2657484 A DE 2657484A DE 2657484 A DE2657484 A DE 2657484A DE 2657484 C2 DE2657484 C2 DE 2657484C2
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- nozzle
- charging electrode
- charging
- diffusion zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 63
- 238000009792 diffusion process Methods 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 239000012528 membrane Substances 0.000 claims description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000001360 synchronised effect Effects 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 2
- 230000000712 assembly Effects 0.000 claims 1
- 238000000429 assembly Methods 0.000 claims 1
- 238000010276 construction Methods 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 claims 1
- 239000010410 layer Substances 0.000 description 62
- 239000000976 ink Substances 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910020169 SiOa Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000009388 chemical precipitation Methods 0.000 description 1
- LYKJEJVAXSGWAJ-UHFFFAOYSA-N compactone Natural products CC1(C)CCCC2(C)C1CC(=O)C3(O)CC(C)(CCC23)C=C LYKJEJVAXSGWAJ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D15/00—Component parts of recorders for measuring arrangements not specially adapted for a specific variable
- G01D15/16—Recording elements transferring recording material, e.g. ink, to the recording surface
- G01D15/18—Nozzles emitting recording material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/07—Ink jet characterised by jet control
- B41J2/075—Ink jet characterised by jet control for many-valued deflection
- B41J2/08—Ink jet characterised by jet control for many-valued deflection charge-control type
- B41J2/085—Charge means, e.g. electrodes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Facsimile Heads (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/653,168 US4047184A (en) | 1976-01-28 | 1976-01-28 | Charge electrode array and combination for ink jet printing and method of manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2657484A1 DE2657484A1 (de) | 1977-08-04 |
| DE2657484C2 true DE2657484C2 (de) | 1984-11-22 |
Family
ID=24619762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2657484A Expired DE2657484C2 (de) | 1976-01-28 | 1976-12-18 | Aufladeelektrodenanordnung für Tintenstrahldrucker |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4047184A (enExample) |
| JP (1) | JPS52100935A (enExample) |
| BR (1) | BR7700424A (enExample) |
| CA (1) | CA1089912A (enExample) |
| DE (1) | DE2657484C2 (enExample) |
| FR (1) | FR2339493A1 (enExample) |
| GB (1) | GB1564713A (enExample) |
| IT (1) | IT1074099B (enExample) |
| NL (1) | NL7700015A (enExample) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE31357E (en) * | 1977-02-24 | 1983-08-23 | The Mead Corporation | Glass nozzle array for an ink jet printer and method of forming same |
| US4112436A (en) * | 1977-02-24 | 1978-09-05 | The Mead Corporation | Glass nozzle array for an ink jet printer and method of forming same |
| US4213238A (en) * | 1979-02-26 | 1980-07-22 | The Mead Corporation | Method of forming a lead to an electrode on a charge plate |
| JPS5764563A (en) * | 1980-10-07 | 1982-04-19 | Fuji Xerox Co Ltd | Ink particle jet apparatus of multi-nozzle ink jet printer |
| JPS57159018U (enExample) * | 1981-03-31 | 1982-10-06 | ||
| US4347522A (en) * | 1981-04-01 | 1982-08-31 | The Mead Corporation | Laminated metal charge plate |
| US4389654A (en) * | 1981-10-01 | 1983-06-21 | Xerox Corporation | Ink jet droplet generator fabrication method |
| JPS58116160A (ja) * | 1981-12-29 | 1983-07-11 | Matsushita Electric Ind Co Ltd | インクジエツト記録ヘツド |
| JPS59194867A (ja) * | 1983-04-20 | 1984-11-05 | Canon Inc | ヘッドの製造方法 |
| US4587527A (en) * | 1985-05-15 | 1986-05-06 | Eastman Kodak Company | Charging electrodes bearing a doped semiconductor coating |
| US4737644A (en) * | 1985-10-30 | 1988-04-12 | International Business Machines Corporation | Conductive coated semiconductor electrostatic deflection plates |
| US4623906A (en) * | 1985-10-31 | 1986-11-18 | International Business Machines Corporation | Stable surface coating for ink jet nozzles |
| US4658269A (en) * | 1986-06-02 | 1987-04-14 | Xerox Corporation | Ink jet printer with integral electrohydrodynamic electrodes and nozzle plate |
| US4809016A (en) * | 1987-03-02 | 1989-02-28 | Ricoh Company, Ltd. | Inkjet interlace printing with inclined printhead |
| US5207866A (en) * | 1991-01-17 | 1993-05-04 | Motorola, Inc. | Anisotropic single crystal silicon etching solution and method |
| DE69322025T2 (de) * | 1992-08-31 | 1999-06-10 | Canon K.K., Tokio/Tokyo | Tintenstrahlkopfherstellungsverfahren mittels Bearbeitung durch Ionen und Tintenstrahlkopf |
| DE69316229T2 (de) * | 1992-10-06 | 1998-08-06 | Merck & Co Inc | Kristallisationsvorrichtung mit zwei strahlen |
| AU5153193A (en) * | 1992-10-13 | 1994-05-09 | Videojet Systems International, Inc. | Method and system for drop marking and a drop deflector for use therewith |
| US5896150A (en) | 1992-11-25 | 1999-04-20 | Seiko Epson Corporation | Ink-jet type recording head |
| US5956058A (en) * | 1993-11-05 | 1999-09-21 | Seiko Epson Corporation | Ink jet print head with improved spacer made from silicon single-crystal substrate |
| GB9404741D0 (en) * | 1994-03-10 | 1994-04-27 | Domino Printing Sciences Plc | Electrode assembly for a continuous ink jet printer |
| US6045710A (en) * | 1995-04-12 | 2000-04-04 | Silverbrook; Kia | Self-aligned construction and manufacturing process for monolithic print heads |
| JP3386099B2 (ja) * | 1995-07-03 | 2003-03-10 | セイコーエプソン株式会社 | インクジェット式記録ヘッド用ノズルプレート、これの製造方法、及びインクジェット式記録ヘッド |
| US5658471A (en) * | 1995-09-22 | 1997-08-19 | Lexmark International, Inc. | Fabrication of thermal ink-jet feed slots in a silicon substrate |
| AUPN623895A0 (en) * | 1995-10-30 | 1995-11-23 | Eastman Kodak Company | A manufacturing process for lift print heads with nozzle rim heaters |
| JP2000515417A (ja) | 1996-07-08 | 2000-11-21 | コーニング インコーポレイテッド | ガス補助型噴霧装置 |
| BR9714615A (pt) * | 1996-07-08 | 2004-04-06 | Spraychip Systems Corp | Dispositivo de atomização de queda de rayleigh e processos de fabricação de dispositvos de atomização de queda de 05 rayleigh |
| US6352209B1 (en) | 1996-07-08 | 2002-03-05 | Corning Incorporated | Gas assisted atomizing devices and methods of making gas-assisted atomizing devices |
| US5870123A (en) * | 1996-07-15 | 1999-02-09 | Xerox Corporation | Ink jet printhead with channels formed in silicon with a (110) surface orientation |
| US5719605A (en) * | 1996-11-20 | 1998-02-17 | Lexmark International, Inc. | Large array heater chips for thermal ink jet printheads |
| US5972781A (en) * | 1997-09-30 | 1999-10-26 | Siemens Aktiengesellschaft | Method for producing semiconductor chips |
| DE69931880T2 (de) * | 1998-12-14 | 2007-05-31 | Eastman Kodak Co. | Elektrische Verdrahtung hoher Dichte für einen kontinuierlich arbeitenden Tintenstrahldruckkopf |
| JP4690556B2 (ja) * | 2000-07-21 | 2011-06-01 | 大日本印刷株式会社 | 微細パターン形成装置と微細ノズルの製造方法 |
| US7364276B2 (en) * | 2005-09-16 | 2008-04-29 | Eastman Kodak Company | Continuous ink jet apparatus with integrated drop action devices and control circuitry |
| US7540589B2 (en) * | 2006-05-11 | 2009-06-02 | Eastman Kodak Company | Integrated charge and orifice plates for continuous ink jet printers |
| US7437820B2 (en) * | 2006-05-11 | 2008-10-21 | Eastman Kodak Company | Method of manufacturing a charge plate and orifice plate for continuous ink jet printers |
| US7568285B2 (en) * | 2006-05-11 | 2009-08-04 | Eastman Kodak Company | Method of fabricating a self-aligned print head |
| US7552534B2 (en) * | 2006-05-11 | 2009-06-30 | Eastman Kodak Company | Method of manufacturing an integrated orifice plate and electroformed charge plate |
| JP2007317790A (ja) * | 2006-05-24 | 2007-12-06 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
| KR100919411B1 (ko) * | 2008-04-25 | 2009-09-29 | 연세대학교 산학협력단 | 전도성 라인형성을 위한 전기수력학 프린팅 장치 및 방법 |
| JP5361466B2 (ja) * | 2009-03-13 | 2013-12-04 | 富士フイルム株式会社 | インクジェットヘッドの製造方法 |
| JP5807362B2 (ja) * | 2011-04-06 | 2015-11-10 | セイコーエプソン株式会社 | 液体噴射ヘッドの製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3770533A (en) * | 1971-07-02 | 1973-11-06 | Philips Corp | Method of producing high resolution patterns in single crystals |
| US3984843A (en) * | 1974-07-01 | 1976-10-05 | International Business Machines Corporation | Recording apparatus having a semiconductor charge electrode |
| US3958255A (en) * | 1974-12-31 | 1976-05-18 | International Business Machines Corporation | Ink jet nozzle structure |
| US3921916A (en) * | 1974-12-31 | 1975-11-25 | Ibm | Nozzles formed in monocrystalline silicon |
| US3949410A (en) * | 1975-01-23 | 1976-04-06 | International Business Machines Corporation | Jet nozzle structure for electrohydrodynamic droplet formation and ink jet printing system therewith |
-
1976
- 1976-01-28 US US05/653,168 patent/US4047184A/en not_active Expired - Lifetime
- 1976-12-15 GB GB52379/76A patent/GB1564713A/en not_active Expired
- 1976-12-18 DE DE2657484A patent/DE2657484C2/de not_active Expired
- 1976-12-22 FR FR7639686A patent/FR2339493A1/fr active Granted
- 1976-12-23 IT IT30796/76A patent/IT1074099B/it active
- 1976-12-23 JP JP15437876A patent/JPS52100935A/ja active Granted
-
1977
- 1977-01-04 NL NL7700015A patent/NL7700015A/xx not_active Application Discontinuation
- 1977-01-17 BR BR7700424A patent/BR7700424A/pt unknown
- 1977-01-24 CA CA270,285A patent/CA1089912A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52100935A (en) | 1977-08-24 |
| IT1074099B (it) | 1985-04-17 |
| BR7700424A (pt) | 1977-10-18 |
| DE2657484A1 (de) | 1977-08-04 |
| GB1564713A (en) | 1980-04-10 |
| FR2339493A1 (fr) | 1977-08-26 |
| NL7700015A (nl) | 1977-08-01 |
| US4047184A (en) | 1977-09-06 |
| JPS5523548B2 (enExample) | 1980-06-24 |
| CA1089912A (en) | 1980-11-18 |
| FR2339493B1 (enExample) | 1981-04-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8128 | New person/name/address of the agent |
Representative=s name: KIRCHHOF, N., ING.(GRAD.), PAT.-ASS., 7030 BOEBLIN |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |